1-(4-硝基苄基)-4-(4-二乙胺苯偶氮)溴吡啶 | 75902-86-2

• 物质功能分类: 医药中间体 - 杂环化合物 - 吡啶类化合物
• 分子结构分类: 有机化合物 - 苯类化合物 - 苯和取代衍生物
• 中文名称: 1-(4-硝基苄基)-4-(4-二乙胺苯偶氮)溴吡啶
• 中文别名: 1-(4-硝基苯基)-4-(4-二乙氨基苯偶氮基)溴化吡啶
• 英文名称: 4-((4-(Diethylamino)phenyl)azo)-1-((4-nitrophenyl)methyl)pyridinium bromide
• 英文别名: N,N-diethyl-4-[[1-[(4-nitrophenyl)methyl]pyridin-1-ium-4-yl]diazenyl]aniline;bromide
• CAS: 75902-86-2
• 化学式: C22H24BrN5O2
• 分子量: 470.4
• InChiKey: SYSMUNIWXNOGPA-UHFFFAOYSA-M

计算性质

• 辛醇/水分配系数(LogP)：
  2.2
• 重原子数：
  30
• 可旋转键数：
  7
• 环数：
  3.0
• sp3杂化的碳原子比例：
  0.23
• 拓扑面积：
  77.7
• 氢给体数：
  0
• 氢受体数：
  6

安全信息

• 安全说明：
  S22,S24/25
• WGK Germany：
  3

文献信息

• RESIN COMPOSITIONS FOR COATING
  申请人：DAICEL CHEMICAL INDUSTRIES, LTD.

  公开号：EP0879861A1

  公开（公告）日：1998-11-25

  A resin composition for coating suitable as, for example, a surface coating material capable of improving the coatability, etc., of olefin resin films, etc., which contains an epoxidized block copolymer (A) and an organic compound (B) carrying a functional group reacting with an epoxy group and having a number-average molecular weight of from 150 to 150,000, wherein the weight ratio (A)/(A + B) ranges from 1/100 to 99/100. Another resin composition for coating which contains an epoxidized block copolymer (A), an organic compound (B) carrying a functional group reacting with an epoxy group and having a number-average molecular weight of from 150 to 150,000, and an epoxy ring opening promoter (C), wherein the weight ratio (A)/(A + B) ranges from 1/100 to 99/100 and the content of the above component (C) ranges from 0.1 to 10 parts by weight per 100 parts by weight of (A + B).

  一种涂料用树脂组合物，适用于改善烯烃树脂薄膜等的涂覆性等的表面涂层材料，它含有环氧化嵌段共聚物(A)和带有与环氧基反应的官能团且平均分子量为150至150,000的有机化合物(B)，其中重量比(A)/(A+B)为1/100至99/100。另一种用于涂料的树脂组合物，含有环氧化嵌段共聚物（A）、带有与环氧基反应的官能团且平均分子量为 150 至 150,000 的有机化合物（B）和环氧开环促进剂（C），其中重量比（A）/（A + B）为 1/100 至 99/100，上述组分（C）的含量为每 100 重量份（A + B）0.1 至 10 重量份。
• ETCHING SOLUTION FOR SELECTIVELY REMOVING SILICON NITRIDE DURING MANUFACTURE OF A SEMICONDUCTOR DEVICE
  申请人：Versum Materials US, LLC

  公开号：EP3422392A1

  公开（公告）日：2019-01-02

  Described herein is an etching solution comprising water, phosphoric acid solution (aqueous), and a hydroxyl group-containing solvent. Such compositions are useful for the selective removal of silicon nitride over silicon oxide from a microelectronic device having such material(s) thereon during its manufacture.

  本文描述的蚀刻溶液由水、磷酸溶液（水溶液）和含羟基的溶剂组成。这种组合物适用于在微电子设备制造过程中选择性地去除氮化硅和氧化硅。
• ETCHING SOLUTION HAVING SILICON OXIDE CORROSION INHIBITOR AND METHOD OF USING THE SAME
  申请人：Versum Materials US, LLC

  公开号：EP3666852A2

  公开（公告）日：2020-06-17

  Described herein is an etching solution suitable for the selective removal of polysilicon over silicon oxide from a microelectronic device, which comprises: water; at least one of a quaternary ammonium hydroxide compound; optionally at least one alkanolamine compound; a water-miscible solvent; at least one nitrogen containing compound selected from the group consisting of a C4-12 alkylamine, a polyalkylenimine, a polyamine, a nitrogen-containing heterocyclic compound, a nitrogen-containing aromatic compound, or a nitrogen-containing heterocyclic and aromatic compound ; and optionally, a surfactant.

  本文描述了一种蚀刻溶液，适用于从微电子设备中选择性去除氧化硅上的多晶硅，该溶液包括水；至少一种氢氧化季铵盐化合物；可选的至少一种烷醇胺化合物；水混溶溶剂；至少一种选自 C4-12 烷基胺、多烷亚胺、多胺、含氮杂环化合物、含氮芳香族化合物或含氮杂环和芳香族化合物的含氮化合物；以及可选的表面活性剂。
• Post-CMP removal using compositions and method of use
  申请人：ENTEGRIS, INC.

  公开号：US10176979B2

  公开（公告）日：2019-01-08

  An amine-free composition and process for cleaning post-chemical mechanical polishing (CMP) residue and contaminants from a microelectronic device having said residue and contaminants thereon. The amine-free composition preferably includes at least one oxidizing agent, at least one complexing agent, at least one basic compound, and water and has a pH in the range from about 2.5 to about 11.5. The composition achieves highly efficacious cleaning of the post-CMP residue and contaminant material from the surface of the microelectronic device without compromising the low-k dielectric material or the copper interconnect material.

  一种无胺组合物和工艺，用于清洗微电子器件上的化学机械抛光（CMP）后残留物和污染物。无胺组合物最好包括至少一种氧化剂、至少一种络合剂、至少一种碱性化合物和水，pH 值在 2.5 到 11.5 之间。该组合物能高效清洗微电子器件表面的 CMP 后残留物和杂质材料，而不会损害低 K 介电材料或铜互连材料。
• Etching solution for selectively removing silicon-germanium alloy from a silicon-germanium/silicon stack during manufacture of a semiconductor device
  申请人：Versum Materials US, LLC

  公开号：US10879076B2

  公开（公告）日：2020-12-29

  Described herein is an etching solution comprising water; oxidizer; water-miscible organic solvent; fluoride ion source; and optionally, surfactant. Such compositions are useful for the selective removal of silicon-germanium over poly silicon from a microelectronic device having such material(s) thereon during its manufacture.

  本文描述的蚀刻溶液由水、氧化剂、水溶性有机溶剂、氟离子源和可选的表面活性剂组成。这种组合物适用于在制造过程中选择性地去除微电子设备中的多晶硅上的硅锗。

表征谱图