1-环己基-1-甲基乙基异丁酸酯 | 63574-03-8

• 分子结构分类: 有机化合物 - 有机酸及其衍生物 - 羧酸及其衍生物
• 中文名称: 1-环己基-1-甲基乙基异丁酸酯
• 英文名称: 1-Cyclohexyl-1-methylethyl isobutyrate
• 英文别名: 2-cyclohexylpropan-2-yl 2-methylpropanoate
• CAS: 63574-03-8
• 化学式: C₁₃H₂₄O₂
• 分子量: 212.33
• InChiKey: LLHBKSLMOGXHEF-UHFFFAOYSA-N

计算性质

• 辛醇/水分配系数(LogP)：
  4.1
• 重原子数：
  15
• 可旋转键数：
  4
• 环数：
  1.0
• sp3杂化的碳原子比例：
  0.92
• 拓扑面积：
  26.3
• 氢给体数：
  0
• 氢受体数：
  2

文献信息

• RESIST COMPOSITION, PATTERNING PROCESS, AND BARIUM, CESIUM AND CERIUM SALTS
  申请人：SHIN-ETSU CHEMICAL CO., LTD.

  公开号：US20170115566A1

  公开（公告）日：2017-04-27

  A resist composition comprising a base resin comprising acid labile group-containing recurring units and preferably acid generator-containing recurring units, and a sodium, magnesium, potassium, calcium, rubidium, strontium, yttrium, cesium, barium or cerium salt of α-fluorinated sulfonic acid bonded to an alkyl, alkenyl, alkynyl or aryl group exhibits a high resolution and sensitivity and forms a pattern of satisfactory profile with minimal LWR after exposure and development.

  一种抗蚀组合物包括基树脂，其中包含含酸敏感基团的重复单元，最好包含含酸发生剂的重复单元，以及与烷基、烯基、炔基或芳基结合的α-氟磺酸的钠、镁、钾、钙、铷、锶、钇、铯、钡或铈盐，表现出高分辨率和灵敏度，并在曝光和显影后形成具有最小LWR的满意轮廓图案。
• RESIST UNDERLAYER FILM COMPOSTION, PATTERNING PROCESS, AND COMPOUND
  申请人：SHIN-ETSU CHEMICAL CO., LTD.

  公开号：US20170018436A1

  公开（公告）日：2017-01-19

  The present invention provides a resist underlayer film composition for lithography, containing a compound having an indenofluorene structure. This resist underlayer film composition is excellent in filling property, generates little outgas, and has high heat resistance.

  本发明提供了一种用于光刻的抗蚀底层膜组合物，包含具有茚并芴结构的化合物。这种抗蚀底层膜组合物具有优异的填充性能，产生少量气体释放，并具有高耐热性。
• MONOMER, POLYMER, CHEMICALLY AMPLIFIED POSITIVE RESIST COMPOSITION, AND PATTERNING PROCESS
  申请人：Hatakeyama Jun

  公开号：US20110294070A1

  公开（公告）日：2011-12-01

  A polymer is obtained from a hydroxyphenyl methacrylate monomer having an acid labile group substituted thereon. A positive resist composition comprising the polymer as a base resin has a very high contrast of alkaline dissolution rate before and after exposure, a high resolution, a good profile and minimal line edge roughness of a pattern after exposure, a retarded acid diffusion rate, and good etching resistance.

  一种聚合物是由一种具有酸敏感基团的羟基苯甲酸甲酯单体合成得到的。该聚合物作为基础树脂的正性光阻组合物具有极高的曝光前后碱溶解速率对比度、高分辨率、曝光后图案的良好轮廓和极小的线边粗糙度、缓慢的酸扩散速率和良好的蚀刻抗性。
• COMPOUND, ACTINIC RAY-SENSITIVE OR RADIATION-SENSITIVE RESIN COMPOSITION, RESIST FILM, AND PATTERN FORMATION METHOD, AND METHOD FOR MANUFACTURING ELECTRONIC DEVICE USING SAME, AND ELECTRONIC DEVICE
  申请人：FUJIFILM CORPORATION

  公开号：US20160024005A1

  公开（公告）日：2016-01-28

  There is provided an actinic ray-sensitive or radiation-sensitive resin composition containing a compound represented by the following formula (1) or (2), and the formula (1) and (2) are defined as herein, and a resist film comprising the actinic ray-sensitive or radiation-sensitive resin composition, and a pattern forming method comprising a step of exposing the resist film, and a step of developing the exposed film, and a method for manufacturing an electronic device, comprising the pattern forming method, and an electronic device manufactured by the manufacturing method of an electronic device.

  提供了一种包含下列式子（1）或（2）所代表的化合物的光致射线敏感或辐射敏感的树脂组合物，其中式（1）和（2）的定义如本文所述，以及包括该光致射线敏感或辐射敏感的树脂组合物的光阻膜，以及包括曝光光阻膜的步骤和显影曝光膜的步骤的图案形成方法，以及包括图案形成方法的制造电子装置的方法，以及由电子装置的制造方法制造的电子装置。
• MONOMER, POLYMER, POSITIVE RESIST COMPOSITION, AND PATTERNING PROCESS
  申请人：Shin-Etsu Chemical Co., Ltd.

  公开号：US20170008982A1

  公开（公告）日：2017-01-12

  A polymer comprising recurring units derived from a polymerizable monomer having two structures of hydroxyphenyl methacrylate having a hydroxy group substituted with an acid labile group is used as base resin in a positive resist composition, especially chemically amplified positive resist composition. The resist composition forms a resist film which is processed by lithography into a pattern of good profile having a high resolution, minimal edge roughness, and etch resistance.

  一种聚合物，包含由可聚合单体衍生的重复单元，该单体具有两种羟基苯甲酸甲酯结构，羟基上取代有酸不稳定基团，作为正性光刻胶组成中的基础树脂，尤其是化学放大正性光刻胶组成中。该光刻胶组成形成一种光刻胶膜，通过光刻技术加工成具有高分辨率、最小边缘粗糙度和蚀刻抗性的良好轮廓图案。