1H-苯并三唑-7-羧酸正丁酯 | 120778-11-2

• 分子结构分类: 有机化合物 - 有机杂环化合物 - 苯并三唑类
• 中文名称: 1H-苯并三唑-7-羧酸正丁酯
• 英文名称: 1H-Benzotriazole-7-carboxylic acid n-butyl ester
• 英文别名: butyl 2H-benzotriazole-4-carboxylate
• CAS: 120778-11-2
• 化学式: C₁₁H₁₃N₃O₂
• 分子量: 219.243
• InChiKey: FBTGKUHFQIXCCN-UHFFFAOYSA-N

物化性质

• 沸点：
  424.3±18.0 °C(Predicted)
• 密度：
  1.247±0.06 g/cm3(Temp: 20 °C; Press: 760 Torr)(Predicted)

计算性质

• 辛醇/水分配系数(LogP)：
  2.1
• 重原子数：
  16
• 可旋转键数：
  5
• 环数：
  2.0
• sp3杂化的碳原子比例：
  0.36
• 拓扑面积：
  67.9
• 氢给体数：
  1
• 氢受体数：
  4

反应信息

• 作为反应物：
  描述：

  1H-苯并三唑-7-羧酸正丁酯 在 sodium hydroxide 作用下， 生成 正丁醇 、 1H-苯并噻唑-7-羧酸
  参考文献：
  名称：

  烷基 1H-苯并三唑脱羧酸盐的水解稳定性

  摘要：

  在 0.1 M NaOH、磷酸盐缓冲液 pH 7.4 中并使用微粒体酯酶制剂研究了 1H-苯并三唑羧酸盐的水解。碱性水解获得的结果定性地类似于酶水解的结果。在磷酸盐缓冲液 pH 7.4 中，酯类在用作体外生物转化研究的潜在底物方面足够稳定。

  DOI：

  10.1002/ardp.19893220207

文献信息

• CHEMICAL MECHANICAL POLISHING AND WAFER CLEANING COMPOSITION COMPRISING AMIDOXIME COMPOUNDS AND ASSOCIATED METHOD FOR USE
  申请人：Lee Wai Mun

  公开号：US20090130849A1

  公开（公告）日：2009-05-21

  A composition and associated method for chemical mechanical planarization (or other polishing) is described. The composition contains an amidoxime compound and water. The composition may also contain an abrasive and a compound with oxidation and reduction potential. The composition is useful for attaining improved removal rates for metal, including copper, barrier material, and dielectric layer materials in metal CMP. The composition is particularly useful in conjunction with the associated method for metal CMP applications.

  本文描述了一种化学机械平整化（或其他抛光）的组合物及其相关方法。该组合物含有一种酰胺肟化合物和水。该组合物还可以含有磨料和具有氧化还原潜力的化合物。该组合物可用于在金属CMP中获得改进的金属去除速率，包括铜、屏障材料和金属CMP中的介电层材料。该组合物在金属CMP应用的相关方法中特别有用。
• ABRASIVE LIQUID FOR METAL AND METHOD FOR POLISHING
  申请人：Hitachi Chemical Company, Ltd.

  公开号：EP1137056A1

  公开（公告）日：2001-09-26

  An abrasive liquid for a metal comprising (1) an oxidizing agent for a metal, (2) a dissolving agent for an oxidized metal, (3) a first protecting film-forming agent such as an amino acid or an azole which adsorbs physically on the surface of the metal and/or forms a chemical bond, to thereby form a protecting film, (4) a second protecting film-forming agent such as polyacrylic acid, polyamido acid or a salt thereof which assists the first protecting film-forming agent in forming a protecting film and (5) water; and a method for polishing.

  一种用于金属的研磨液，包括：(1) 金属的氧化剂；(2) 氧化金属的溶解剂；(3) 第一保护成膜剂，如氨基酸或唑，其物理吸附在金属表面和/或形成化学键，从而形成保护膜；(4) 第二保护成膜剂，如聚丙烯酸、聚酰胺酸或其盐，其协助第一保护成膜剂形成保护膜；(5) 水；以及抛光方法。
• MATERIALS FOR POLISHING LIQUID FOR METAL, POLISHING LIQUID FOR METAL, METHOD FOR PREPARATION THEREOF AND POLISHING METHOD USING THE SAME
  申请人：Hitachi Chemical Company, Ltd.

  公开号：EP1150341A1

  公开（公告）日：2001-10-31

  Provided are a metal-polishing liquid that comprises an oxidizing agent, an oxidized-metal etchant, a protective film-forming agent, a dissolution promoter for the protective film-forming agent, and water; a method for producing it; and a polishing method of using it. Also provided are materials for the metal-polishing liquid, which include an oxidized-metal etchant, a protective film-forming agent, and a dissolution promoter for the protective film-forming agent.

  本发明提供了一种金属抛光液，它由氧化剂、氧化金属蚀刻剂、保护膜形成剂、保护膜形成剂的溶解促进剂和水组成；还提供了一种生产方法和一种抛光方法。此外，还提供了用于金属抛光液的材料，其中包括氧化金属蚀刻剂、保护膜形成剂和保护膜形成剂的溶解促进剂。
• Polishing solution of metal and chemical mechanical polishing method
  申请人：FUJI PHOTO FILM CO., LTD.

  公开号：EP1612249A1

  公开（公告）日：2006-01-04

  A polishing solution for metal comprises a specific compound represented and an oxidizing agent. A chemical mechanical polishing method for a semiconductor substrate, comprises: supplying a polishing solution for metal comprising a specific compound; and an oxidizing agent; allowing a polishing face and a face to be polished to be moved relatively to each other while the polishing face and the face to be polished are in contact with each other via the polishing solution for metal; and performing polishing with a contact pressure between the polishing face and the face to be polished in the range of from 1000 to 25000 Pa.

  一种金属抛光液包括一种特定化合物和一种氧化剂。一种用于半导体基板的化学机械抛光方法，包括：提供由特定化合物和氧化剂组成的金属用抛光液；在抛光面和被抛光面通过金属用抛光液相互接触时，允许抛光面和被抛光面相对移动；以及在抛光面和被抛光面之间的接触压力为 1000 至 25000 Pa 的范围内进行抛光。
• Polishing composition and method of polishing with the same
  申请人：FUJI PHOTO FILM CO., LTD.

  公开号：EP1642949A1

  公开（公告）日：2006-04-05

  A polishing composition comprises: at least one compound selected from tetrazole compounds and derivatives thereof and anthranilic acid compounds and derivatives thereof; abrasive particles comprising associative abrasive particles; and an oxidizing agent.

  一种抛光组合物包括：至少一种选自四氮唑化合物及其衍生物和蚁酸化合物及其衍生物的化合物；由缔合磨料颗粒组成的磨料颗粒；以及一种氧化剂。