We investigated the photoluminescence as well as the crystal structure and optical energy gaps of the Zn1-xCdxAl2Se4-4xS4x solid solution system based on the Al-related compounds of ZnAl2Se4, ZnAl2S4, CdAl2Se4, and CdAl2S4. The single crystals of the system with 0.0 ≤ x ≤ 1.0 were grown by the chemical transport reaction technique. The Zn1-xCdxAl2Se4-4xS4x crystallizes in a defect chalcopyrite structure for a whole composition and has an optical energy gap ranging from 3.525 to 3.577 eV at 13 K. The photoluminescence spectra at 13 K showed a strong emission band in the blue spectral region and a weak broad emission band in the visible region due to donor–acceptor pair recombination. The composition and temperature dependence of these bands were examined in the investigated regions. The simple energy band scheme for the radiative mechanisms of the Zn1-xCdxAl2Se4-4xS4x is proposed on the basis of our experimental results along with photo-induced current transient spectroscopy measurements.
我们研究了基于ZnAl2Se4、ZnAl2S4、CdAl2Se4和CdAl2S4等铝相关化合物的Zn1-xCdxAl2Se4-4xS4x固溶体系的光致发光以及晶体结构和光学能隙。该体系中 0.0 ≤ x ≤ 1.0 的单晶是通过化学传输反应技术生长的。Zn1-xCdxAl2Se4-4xS4x 在整个成分中结晶为有缺陷的黄铜矿结构,在 13 K 时的光能隙为 3.525 至 3.577 eV。在所研究的区域中,对这些发射带的组成和温度依赖性进行了研究。根据我们的实验结果和光诱导电流瞬态光谱测量,提出了 Zn1-xCdxAl2Se4-4xS4x 辐射机制的简单能带方案。