申请人:Hitachi, Ltd.
公开号:US20020027268A1
公开(公告)日:2002-03-07
The present invention provides a resin-encapsulated semiconductor apparatus comprising a semiconductor device having a ferroelectric film and a surface-protective film, and an encapsulant member comprising a resin; the surface-protective film being formed of a polyimide. The present invention also provides a process for fabricating a resin-encapsulated semiconductor apparatus, comprising the steps of forming a film of a polyimide precursor composition on the surface of a semiconductor device having a ferroelectric film; heat-curing the polyimide precursor composition film to form a surface-protective film formed of a polyimide; and encapsulating, with an encapsulant resin, the semiconductor device on which the surface-protective film has been formed. The polyimide may preferably have a glass transition temperature of from 240° C. to 400° C. and a Young's modulus of from 2,600 MPa to 6 GPa. The curing may preferably be carried out at a temperature of from 230° C. to 300° C.
本发明提供了一种树脂封装半导体装置,该装置包括具有铁电薄膜和表面保护膜的半导体器件,以及由树脂组成的封装件;表面保护膜由聚酰亚胺形成。本发明还提供了一种制造树脂封装半导体设备的工艺,包括以下步骤:在具有铁电薄膜的半导体设备表面形成聚酰亚胺前体组合物薄膜;热固化聚酰亚胺前体组合物薄膜,形成由聚酰亚胺构成的表面保护膜;以及用封装树脂封装已形成表面保护膜的半导体设备。聚酰亚胺最好具有 240°C 至 400°C 的玻璃转化温度和 2,600 MPa 至 6 GPa 的杨氏模量。固化最好在 230 摄氏度至 300 摄氏度的温度下进行。