1,4-Bis(4-methoxyphenylethynyl)benzene | 131941-36-1

• 分子结构分类: 有机化合物 - 苯类化合物 - 苯酚醚
• 英文名称: 1,4-Bis(4-methoxyphenylethynyl)benzene
• 英文别名: 1,4-bis[2-(4-methoxyphenyl)ethynyl]benzene
• CAS: 131941-36-1
• 化学式: C₂₄H₁₈O₂
• 分子量: 338.4
• InChiKey: XTOTWCSWPHHCBG-UHFFFAOYSA-N

计算性质

• 辛醇/水分配系数(LogP)：
  5.9
• 重原子数：
  26
• 可旋转键数：
  6
• 环数：
  3.0
• sp3杂化的碳原子比例：
  0.08
• 拓扑面积：
  18.5
• 氢给体数：
  0
• 氢受体数：
  2

文献信息

• [EN] NOVEL COMPOUND, SEMICONDUCTOR MATERIAL, AND METHODS FOR MANUFACTURING COATING AND SEMICONDUCTOR USING THE SAME<br/>[FR] NOUVEAU COMPOSÉ, MATÉRIAU SEMI-CONDUCTEUR, PROCÉDÉS DE FABRICATION DE REVÊTEMENT ET SEMI-CONDUCTEUR L'UTILISANT
  申请人：MERCK PATENT GMBH

  公开号：WO2018115043A1

  公开（公告）日：2018-06-28

  An object is to provide a semiconductor material and coating having high solubility in solvents and having advantageous filling property, high heat resistance, and/or high etching resistance. Another object is to provide a method for manufacturing a semiconductor using the semiconductor material. Still another object is to provide a novel compound. Provided are: a semiconductor material consisting of a specific aromatic hydrocarbon ring derivative; methods for manufacturing a coating and a semiconductor using the semiconductor material; and a compound consisting of a specific aromatic hydrocarbon ring derivative.

  提供一种在溶剂中具有高溶解性且具有有利的填充性能、高耐热性和/或高耐蚀性的半导体材料和涂层是一个目标。另一个目标是提供一种使用该半导体材料制造半导体的方法。还有一个目标是提供一种新型化合物。提供的是：由特定芳香烃环衍生物组成的半导体材料；使用该半导体材料制造涂层和半导体的方法；以及由特定芳香烃环衍生物组成的化合物。
• NOVEL COMPOUND, SEMICONDUCTOR MATERIAL, AND METHODS FOR MANUFACTURING COATING AND SEMICONDUCTOR USING THE SAME
  申请人：Merck Patent GmbH

  公开号：EP3558917A1

  公开（公告）日：2019-10-30
• ORGANIC THIN FILM TRANSISTOR DEVICE AND ORGANIC THIN FILM LIGHT-EMITTING TRANSISTOR
  申请人：Nakano Yuki

  公开号：US20100012929A1

  公开（公告）日：2010-01-21

  An organic thin film transistor including a substrate having thereon at least three terminals of a gate electrode, a source electrode and a drain electrode, an insulator layer and an organic semiconductor layer, with a current between a source and a drain being controlled upon application of a voltage to the gate electrode, wherein the organic semiconductor layer includes a compound having a specified structure; and an organic thin film light emitting transistor utilizing an organic thin film transistor, wherein the organic thin film transistor is one in which light emission is obtained utilizing a current flowing between the source and the drain, and the light emission is controlled upon application of a voltage to the gate electrode, and is made high with respect to the response speed (driving speed) and has a large ON/OFF ratio, are provided.
• US8217389B2
  申请人：——

  公开号：US8217389B2

  公开（公告）日：2012-07-10