The reaction of dimesityl selenide (Mes2Se) with either PdCl2(PhCN)2 in toluene or PdCl2 in tolueneâacetonitrile yields a chloro-bridged binuclear palladium complex, [Pd2Cl2(μ-Cl)2(Mes2Se)2] (1), whereas with Na2PdCl4 in refluxing ethanol, a cyclometallated palladium complex, [Pd2(μ-Cl)2MesSeC6H2(Me2)CH2}2] (2) is afforded. 2 can also be obtained when 1 is refluxed in ethanol. On treatment with Pb(Epy)2 in dichloromethane, 2 afforded the Epy-bridged binuclear complexes, [Pd2(μ-Epy)2MesSeC6H2(Me2)CH2}2] (3; E = S (3a) or Se (3b)). Treatment of 2 with PPh3 yields a bridge-cleaved monomeric complex, [PdClMesSeC6H2(Me2)CH2}(PPh3)]. The molecular structures of 1â3 were established by X-ray diffraction analyses. All the complexes are dimeric, with the palladium atoms acquiring a distorted square planar configuration. There are intra-molecular CâHâ¯Pd interactions (dMâH: 2.75 Ã
and
二甲苯硒化物 (Mes2Se) 与甲苯中的 PdCl2(PhCN)2 或甲苯乙腈中的 PdCl2 反应生成氯桥双核钯络合物,[Pd2Cl2(μ-Cl)2(Mes2Se)2] (1),而在回流乙醇中使用Na2PdCl4,则得到环金属化钯络合物[Pd2(μ-Cl)2MesSeC6H2(Me2)CH2}2] (2)。当1在乙醇中回流时也可以获得2。在二氯甲烷中用 Pb(Epy)2 处理后,2 得到 Epy 桥联双核配合物,[Pd2(μ-Epy)2MesSeC6H2(Me2)CH2}2] (3; E = S (3a) 或 Se (3b) ))。用 PPh3 处理 2 产生桥断单体复合物 [PdClMesSeC6H2(Me2)CH2}(PPh3)]。通过X射线衍射分析确定了1~3的分子结构。所有配合物都是二聚体,钯原子获得扭曲的方形平面构型。 1 中存在分子内 C–H–Pd 相互作用(dM–H:2.75 × 和
Effects of heat treatment and sintering additives on thermal conductivity and electrical resistivity in fine-grained SiC ceramics
作者:Guo-Dong Zhan、Mamoru Mitomo、Amiya K. Mukherjee
DOI:10.1557/jmr.2002.0341
日期:2002.9
The effects of heat treatment and sintering additives on the thermal conductivity and electrical resistivity of fine-grained SiC materials were investigated. The thermal conductivity and the electrical resistivity of dense SiC materials were measured at room temperature by a laser flash technique and a current-voltage method, respectively. The results indicated that the thermal conductivity and electrical resistivity of the SiC materials were dependent on the sintering additives and the resultant microstructure. Annealed materials with oxide additives developed microstructures consisting of elongated grains of various α/β–SiC polytypes. In contrast, annealed materials with oxynitride additives had microstructures consisting of fine equiaxed grains entirely of β–SiC phase. For the annealed materials with oxide additives the observed thermal conductivity was over 110 W/mK. For the annealed materials with oxynitride additives the observed value was 47 W/mK. The electrical resistivity of a hot-pressed material with oxide sintering additives decreased after annealing. For annealed materials with oxynitride additives, the electrical resistivity was even lower. High-resolution electron microscopy revealed a thin amorphous phase along the grain boundaries. Energy dispersive x-ray spectroscopy results showed that there was segregation of both Al and O atoms and a very small amount of Y atoms at grain boundaries. The results indicated that the chemistry and structure of the grain boundary has significant influence on thermal and electrical properties in SiC.
研究了热处理和烧结添加剂对细粒度碳化硅材料热导率和电阻率的影响。采用激光闪光技术和电流电压法分别测量了致密碳化硅材料在室温下的热导率和电阻率。结果表明,SiC 材料的热导率和电阻率取决于烧结添加剂和由此产生的微观结构。含有氧化物添加剂的退火材料形成了由不同 α/β-SiC 聚合物类型的细长晶粒组成的微观结构。相比之下,含有氮氧化物添加剂的退火材料的微观结构则由完全由 β-SiC 相组成的细小等轴晶粒构成。对于含有氧化物添加剂的退火材料,观察到的热导率超过 110 W/mK。对于含有氮氧化物添加剂的退火材料,观测值为 47 W/mK。使用氧化物烧结添加剂的热压材料在退火后电阻率下降。而含有氮氧化物添加剂的退火材料的电阻率则更低。高分辨率电子显微镜显示,沿晶界有一层薄薄的无定形相。能量色散 X 射线光谱分析结果表明,在晶界处存在 Al 原子和 O 原子以及极少量 Y 原子的偏析。结果表明,晶界的化学和结构对碳化硅的热性能和电性能有重大影响。
Radical cyclization of alkynyl aryl ketones for the synthesis of 3-seleno-substituted thiochromones and chromones
作者:Ricardo H. Bartz、Krigor B. Silva、Thiago J. Peglow、Angelita M. Barcellos、Raquel G. Jacob、Eder J. Lenardão、Gelson Perin
DOI:10.1039/d2ob01762h
日期:——
ones and 3-organylselanylchromones via the radical cyclization reaction between alkynyl aryl ketones containing an ortho-thiopropyl/methoxy group and diorganyl diselenides promoted by Oxone®. This method allows the construction and seleno-functionalization of thiochromones and chromones using Oxone® as a stable and non-hazardous oxidizing agent in the presence of CH3CN at 82 °C. These reactions tolerate
我们报告了一种通过含有邻硫代丙基/甲氧基的炔基芳基酮与 Oxone® 促进的二有机基二硒化物之间的自由基环化反应直接合成 3-有机基硒基硫代色酮和 3-有机基硒基色酮的策略。该方法允许在CH 3存在下使用 Oxone® 作为稳定且无害的氧化剂来构建和硒代官能化硫色酮和色酮CN 在 82 °C。这些反应可容忍各种取代基,并允许合成 21 种新的 3-有机基硒基硫代色酮和硒基色酮,产率从高到高 (55–95%)。此外,所开发的方法证明适用于放大(3.0 mmol,80%),并且所制备化合物的合成有效性在 2-phenyl-3-(phenylselanyl)-4 H -thiochromen-4的氧化中得到证明-一。
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