The present invention relates to compounds which are of use in the field of agriculture as fungicides.
本发明涉及在农业领域作为杀菌剂使用的化合物。
<i>O</i>-Trifluoromethylation of Phenols: Access to Aryl Trifluoromethyl Ethers by <i>O</i>-Carboxydifluoromethylation and Decarboxylative Fluorination
作者:Min Zhou、Chuanfa Ni、Zhengbiao He、Jinbo Hu
DOI:10.1021/acs.orglett.6b01779
日期:2016.8.5
A new strategy for the synthesis of aryl trifluoromethyl ethers (ArOCF3) by combining O-carboxydifluoromethylation of phenols and subsequent decarboxylativefluorination is reported. This protocol allows easy construction of functionalized trifluoromethoxybenzenes and trifluoromethylthiolated arenes (ArSCF3) in moderate to good yields. Moreover, it utilizes accessible and inexpensive reagents sodium
Fluorodecarboxylation: Synthesis of aryl trifluoromethyl ethers (ArOCF3) and thioethers (ArSCF3)
作者:Sankarganesh Krishanmoorthy、Simon D. Schnell、Huong Dang、Fang Fu、G.K. Surya Prakash
DOI:10.1016/j.jfluchem.2017.07.017
日期:2017.11
Fluorodecarboxylation of aryloxydifluoroacetic acid (ArOCF2CO2H) and arylmercaptodifluoroacetic acid (ArSCF2CO2H) towards ArXCF3 (X = O, S) using silver (I) salts in the presence of Selectfluor in a biphasic system with trifluoroacetic acid additive is discussed.
在具有三氟乙酸添加剂的双相体系中,在Selectfluor的存在下,使用银(I)盐存在下,使用银(I)盐将芳氧基二氟乙酸(ArOCF 2 CO 2 H)和芳基巯基二氟乙酸(ArSCF 2 CO 2 H)朝ArXCF 3(X = O,S)进行氟羧化讨论。
ONIUM SALT COMPOUND, CHEMICALLY AMPLIFIED RESIST COMPOSITION AND PATTERNING PROCESS
申请人:Shin-Etsu Chemical Co., Ltd.
公开号:US20210179554A1
公开(公告)日:2021-06-17
An onium salt having formula (1) serving as an acid diffusion inhibitor and a chemically amplified resist composition comprising the acid diffusion inhibitor are provided. When processed by lithography, the resist composition exhibits a high sensitivity, and excellent lithography performance factors such as CDU and LWR.
ONIUM SALT, CHEMICALLY AMPLIFIED RESIST COMPOSITION AND PATTERNING PROCESS
申请人:Shin-Etsu Chemical Co., Ltd.
公开号:US20220127225A1
公开(公告)日:2022-04-28
An onium salt having formula (1) serving as an acid diffusion inhibitor and a chemically amplified resist composition comprising the acid diffusion inhibitor are provided. When processed by lithography, the resist composition forms a pattern having minimal defects and excellent lithography performance factors such as CDU, LWR and DOF.