The present invention provides a photosensitive resin composition used to form a top resist layer of a multilayer resist system, the composition comprising a photosensitive polyphenylsilsesquioxane represented by the following general formula (I) of:
wherein X is the one selected from the group consisting of acryloyloxymethyl, methacryloyloxymethyl, and cinnamoyloxymethyl; and I, m and n are zero or positive integers but I and m do not take the value of zero simultaneously; and a bisazide compound added to act as a cross-linking agent.
The photosensitive resin composition has high sensitivity to UV lights and excellent resistance to reactive ion etching under oxygen gas (O2 RIE).
本发明提供了一种用于形成多层抗蚀剂体系顶层抗蚀层的光敏
树脂组合物,该组合物包括由以下通式(I)表示的光敏聚苯基
硅倍半氧烷:其中,X是从
丙烯酰氧基甲基、甲基
丙烯酰氧基甲基和肉桂酰氧基甲基组成的组中选出的一个;I、m和n为零或正整数,但I和m不同时取值为零;以及添加的用作
交联剂的双氮化合物。 该光敏
树脂组合物对紫外线具有高灵敏度,对
氧气(O2 RIE)下的活性离子蚀刻具有优异的耐受性。