4H-thieno<3,4-c>pyrrole | 42376-98-7

• 分子结构分类: 有机化合物 - 有机杂环化合物 - 杂芳族化合物
• 英文名称: 4H-thieno<3,4-c>pyrrole
• 英文别名: 6H-thieno[3,4-c]pyrrole
• CAS: 42376-98-7
• 化学式: C₆H₅NS
• 分子量: 123.178
• InChiKey: STSDGCGPDSYAON-UHFFFAOYSA-N

计算性质

• 辛醇/水分配系数(LogP)：
  0.7
• 重原子数：
  8
• 可旋转键数：
  0
• 环数：
  2.0
• sp3杂化的碳原子比例：
  0.17
• 拓扑面积：
  40.6
• 氢给体数：
  0
• 氢受体数：
  2

反应信息

• 作为反应物：
  描述：

  N-苯基马来酰亚胺 、 4H-thieno<3,4-c>pyrrole 以 四氢呋喃 、 乙醚 为溶剂， 反应 24.0h， 生成 exo-4,8-epimino-2-phenyl-2,3,3a,4,8,8a-hexahydro-1H-thieno<3,4-f>isoindole-1,3-dione 、 endo-4,8-epimino-2-phenyl-2,3,3a,4,8,8a-hexahydro-1H-thieno<3,4-f>isoindole-1,3-dione
  参考文献：
  名称：

  Sha, Chin-Kang; Tsou, Chiu-Peng, Journal of the Chemical Society. Perkin transactions I, 1994, # 21, p. 3065 - 3070

  摘要：

  DOI：
• 作为产物：
  描述：

  diethyl 10-thia-4,5,6-triazatricyclo[6.3.0.02,6]undeca-1(11),4,8-triene-3,3-dicarboxylate;4-methylbenzenesulfonic acid 以93%的产率得到
  参考文献：
  名称：

  Sha Chin-Kang, Tsou Chiu-Peng, J. Chem. Soc. Perkin Trans. 1, (1994) N 21, S 3065-3070

  摘要：

  DOI：

文献信息

• 4H-thieno[3,4-c]pyrrole: synthesis and characterization of the parent ring system
  作者：Chin-Kang Sha、Chiu-Peng Tsou、Sue-Lein Wang

  DOI：10.1039/c39880000320

  日期：——

  4H-Thieno[3,4-c]pyrrole (4) was synthesised from the azide (8) by intramolecular 1,3-dipolar cycloaddition followed by acid-catalysed 1,3-dipolar cycloreversion of the dihydrotriazole intermediate (9); the crystal structure of one of the products formed on trapping (4) with N-phenylmaleimide has been determined.

  通过分子内的1,3-偶极环加成，然后酸催化的二氢三唑中间体（9），由叠氮化物（8）合成4 H-噻吩并[3,4- c ]吡咯（4）；已经确定了用N-苯基马来酰亚胺捕获（4）时形成的产物之一的晶体结构。
• SHA, CHIN-KANG;TSOU, CHIU-PENG;WANG, SUE-LEIN, J. CHEM. SOC. CHEM. COMMUN.,(1988) N 4, 320-322
  作者：SHA, CHIN-KANG、TSOU, CHIU-PENG、WANG, SUE-LEIN

  DOI：——

  日期：——
• TREATING SOLUTION FOR ELECTRONIC PARTS, AND PROCESS FOR PRODUCING ELECTRONIC PARTS
  申请人：FINE POLYMERS CORPORATION

  公开号：US20150279654A1

  公开（公告）日：2015-10-01

  The invention provides an aqueous solution capable of selectively protecting a nitrogen-containing silicon compound from corrosion by a treating solution for etching, cleaning or the like, etching oxygen-containing, carbon-containing silicon in particular, and making a large etch rate difference between a nitrogen-containing silicon compound and an oxygen-containing silicon compound, and a process for producing electronic parts as well. The invention is embodied by a treating solution for electronic parts that is an aqueous solution containing one or two or more of anionic surface active agents represented by the following formulae (1), (2) and (3), and a process for producing an electronic part. wherein R 1 , R 2 , and R 3 stands for hydrogen or an alkyl or alkylene group having 1 to 4 carbon atoms, and X 1 stands for a functional group capable of becoming an anionic ion. wherein R 4 stands for hydrogen or an alkyl or alkylene group having 1 to 4 carbon atoms, X 2 stands for a functional group capable of becoming an anionic ion, and n stands for a natural number of greater than 2. wherein R 5 stands for hydrogen or an alkyl or alkylene group having 1 to 4 carbon atoms, and X 3 , and X 4 stands for a functional group capable of becoming an anionic ion.
• US5380742A
  申请人：——

  公开号：US5380742A

  公开（公告）日：1995-01-10
• US9812315B2
  申请人：——

  公开号：US9812315B2

  公开（公告）日：2017-11-07