Tetramethylammonium phthalate | 127171-87-3

• 分子结构分类: 有机化合物 - 苯类化合物 - 苯和取代衍生物
• 英文名称: Tetramethylammonium phthalate
• 英文别名: phthalate;tetramethylazanium
• CAS: 127171-87-3
• 化学式: C16H28N2O4
• 分子量: 312.4
• InChiKey: VRUJCFSQHOLHRM-UHFFFAOYSA-L

计算性质

• 辛醇/水分配系数(LogP)：
  -0.94
• 重原子数：
  22
• 可旋转键数：
  0
• 环数：
  1.0
• sp3杂化的碳原子比例：
  0.5
• 拓扑面积：
  80.3
• 氢给体数：
  0
• 氢受体数：
  4

反应信息

• 作为产物：
  描述：

  邻苯二甲酸 、 四甲基氢氧化铵 生成 Tetramethylammonium phthalate
  参考文献：
  名称：

  YOKOYAMA, YUTAKA;SHIMIZU, MAKOTO;TSUJI, TATSUNORI

  摘要：

  DOI：

文献信息

• PROCESSES OF ENANTIOSELECTIVELY FORMING AN AMINOXY COMPOUND AND AN 1,2-OXAZINE COMPOUND
  申请人：Zhong Guofu

  公开号：US20110224429A1

  公开（公告）日：2011-09-15

  Disclosed is a process of enantioselectively forming an aminoxy compound of Formula (3) In formula (3) R 1 is one of an aliphatic group and an alicyclic group. R 2 is one of hydrogen, an aliphatic group, an alicyclic group, an aromatic group, an arylaliphatic group and an arylalicyclic group. R 3 is one of hydrogen, halogen, hydroxyl, and an aliphatic group with a main chain having 1 to about 10 carbon atoms. The respective aliphatic, alicyclic, aromatic, arylaliphatic or arylalicyclic groups of R 1 , R 2 , and R 3 comprise 0 to about 3 heteroatoms independently selected from the group consisting of N, O, S, Se and Si. The process includes contacting a carbonyl compound of Formula (1) and a nitroso compound of Formula (2) in the presence of a chiral catalyst. The chiral catalyst is a compound of Formula (IX)

  本公开了一种选择性形成化合物的过程，该化合物的化学式为（3）。在化学式（3）中，R1是脂肪族基团和脂环族基团中的一种。R2是氢、脂肪族基团、脂环族基团、芳香族基团、芳基脂肪族基团和芳基脂环族基团中的一种。R3是氢、卤素、羟基和主链含有1至约10个碳原子的脂肪族基团中的一种。R1、R2和R3的各自的脂肪、脂环、芳香、芳基脂肪或芳基脂环基团包括独立选择自N、O、S、Se和Si组成的0至约3个杂原子。该过程包括在手性催化剂的存在下接触化合物的化学式（1）和化合物的化学式（2）。该手性催化剂是化合物的化学式（IX）。
• MATERIAL FOR ELECTROLYTIC SOLUTIONS AND USE THEREOF
  申请人：Mizuta Keiichiro

  公开号：US20100173195A1

  公开（公告）日：2010-07-08

  It is an object of the present invention to provide a material for electrolytic solutions suited for use as material in electrolytic solutions serving as ionic conductors in electrochemical devices, such as large-capacity cells or batteries. The present invention is related to a material for electrolytic solutions which comprises, as an essential constituent, an anion represented by the general formula (1): wherein X represents at least one element selected from among B, N, O, Al, Si, P, S, As and Se; M 1 and M 2 are the same or different and each represents an organic linking group; a is an integer of not less than 1, and b, c and d each independently is an integer of not less than 0.

  本发明的目的是提供一种适用于用作离子导体的电化学设备中的电解质溶液材料，例如大容量电池或电池。本发明涉及一种电解质溶液材料，其主要成分为由通用公式（1）表示的阴离子：其中X代表从B、N、O、Al、Si、P、S、As和Se中选择的至少一个元素；M1和M2相同或不同，每个代表有机连接基团；a是不少于1的整数，b、c和d各自独立地是不少于0的整数。
• Material for electrolytic solutions and use thereof
  申请人：Nippon Shokubai Co., Ltd.

  公开号：US20040002002A1

  公开（公告）日：2004-01-01

  It is an object of the present invention to provide a material for electrolytic solutions suited for use as material in electrolytic solutions serving as ionic conductors in electrochemical devices, such as large-capacity cells or batteries. The present invention is related to a material for electrolytic solutions which comprises, as an essential constituent, an anion represented by the general formula (1): 1 wherein X represents at least one element selected from among B, N, O, Al, Si, P, S, As and Se; M 1 and M 2 are the same or different and each represents an organic linking group; a is an integer of not less than 1, and b, c and d each independently is an integer of not less than 0.

  本发明的目的是提供一种适用于作为电化学设备中离子导体的电解质材料的电解质材料，例如大容量电池或电池。本发明涉及一种电解质材料，其包括一个由一般式（1）表示的阴离子作为必要成分：1其中X表示从B、N、O、Al、Si、P、S、As和Se中选择的至少一个元素；M1和M2相同或不同，每个代表一个有机连接基团；a是不小于1的整数，b、c和d各自是不小于0的整数。
• Process for producing oligoesters
  申请人：MITSUBISHI GAS CHEMICAL COMPANY, INC.

  公开号：EP0053024A1

  公开（公告）日：1982-06-02

  A process for producing an oligoester which comprises (a) the step of reacting isophthalic acid and propylene oxide in a reaction medium in the presence of a specific catalyst comprising a tetraalkyl ammonium compound to prepare an oligoester, and (b) the step of removing volatile components from the resulting oligoester by heating the oligoester at a temperature of 180 - 280°C is disclosed. The oligoester is used as an intermediate for preparing unsaturated polyesters.

  一种生产低聚酯的工艺，包括 (a) 在由四烷基铵化合物组成的特定催化剂存在下，使间苯二甲酸和环氧丙烷在反应介质中反应，制备低聚酯，以及 (b) 在 180-280°C 的温度下加热低聚酯，除去低聚酯中的挥发性成分。该低聚酯可用作制备不饱和聚酯的中间体。
• Cleaning agent for semiconductor device and method for manufacturing semiconductor device
  申请人：MITSUBISHI GAS CHEMICAL COMPANY, INC.

  公开号：EP0662705A2

  公开（公告）日：1995-07-12

  There are disclosed a method of manufacturing a semiconductor device by forming a mask with a photoresist on a conductive layer formed on a semiconductor substrate and then forming a wiring structure by dryetching which method comprises a cleaning step of peeling a protecting deposition film formed on side walls of the conductive layer and the photoresist by using a cleaning agent for a semiconductor device comprising an aqueous solution containing a specific quaternary ammonium salt and a fluoro-compound; and a cleaning agent for a semiconductor device which comprises a specific quaternary ammonium salt and a fluoro-compound, and optionally an organic solvent selected from the group consisting of amides, lactones, nitriles, alcohols and esters. The use of the above cleaning agent in the method of manufacturing a semiconductor device can peel out the protecting deposition film with extreme certainty, whereby the surface of the conductive layer is decontaminated to high cleanness and corrosion problem is eliminated.

  本发明公开了一种通过在半导体衬底上形成的导电层上用光致抗蚀剂形成掩膜，然后通过干蚀刻形成布线结构来制造半导体器件的方法，该方法包括一个清洁步骤，即使用一种半导体器件用清洁剂剥离在导电层和光致抗蚀剂侧壁上形成的保护沉积膜，该清洁剂包括一种含有特定季铵盐和氟化合物的水溶液；和一种用于半导体器件的清洗剂，该清洗剂包括一种特定的季铵盐和一种氟化合物，以及一种可选的有机溶剂，该有机溶剂选自由酰胺类、内酯类、腈类、醇类和酯类组成的组。在半导体设备的制造方法中使用上述清洁剂，可以非常准确地剥离保护沉积膜，从而使导电层表面得到高度清洁的净化，消除腐蚀问题。