Bicyclo[2.2.1]hept-5-en-2-yl butanoate | 22174-86-3

• 分子结构分类: 有机化合物 - 脂质和类脂质分子 - 脂肪酰基
• 英文名称: Bicyclo[2.2.1]hept-5-en-2-yl butanoate
• 英文别名: 2-bicyclo[2.2.1]hept-5-enyl butanoate
• CAS: 22174-86-3
• 化学式: C₁₁H₁₆O₂
• 分子量: 180.24
• InChiKey: JMEMVSDKJQQALK-UHFFFAOYSA-N

计算性质

• 辛醇/水分配系数(LogP)：
  2.2
• 重原子数：
  13
• 可旋转键数：
  4
• 环数：
  2.0
• sp3杂化的碳原子比例：
  0.73
• 拓扑面积：
  26.3
• 氢给体数：
  0
• 氢受体数：
  2

反应信息

• 作为产物：
  描述：

  5-降冰片烯-2-醇 、 丁酸 以26%的产率得到
  参考文献：
  名称：

  MUSAEV, M. R.;EHFENDIEVA, Z. S., AZERB. XIM. ZH.,(1987) N 4, 81-83

  摘要：

  DOI：

文献信息

• MUSAEV, M. R.;EHFENDIEVA, Z. S., AZERB. XIM. ZH.,(1987) N 4, 81-83
  作者：MUSAEV, M. R.、EHFENDIEVA, Z. S.

  DOI：——

  日期：——
• Block copolyolefins possessing a tapered structure
  申请人：Bazan C. Guillermo

  公开号：US20060094827A1

  公开（公告）日：2006-05-04

  A method of preparing a polymer having a tapered block copolymer structure. The method comprises polymerizing a first olefin monomer and a different second olefin monomer in the presence of a catalyst supporting living or quasi-living polymerization. In certain embodiments, the catalyst comprises two neutral metal complexes. In preferred embodiments, a tapered block copolymer structure is formed by adding one monomer in a single batch at the start of the polymerization reaction, and adding a second monomer throughout the course of the reaction. The present invention also provides polymers having one or more tapered block copolymer sections, and compositions based on these polymers.
• HIGH ETCH RESISTANT UNDERLAYER COMPOSITIONS FOR MULTILAYER LITHOGRAPHIC PROCESSES
  申请人：De Binod B.

  公开号：US20080206667A1

  公开（公告）日：2008-08-28

  An etch resistant thermally curable Underlayer for use in a multiplayer liyhographic process to produce a photolithographic bilayer coated substrate, the composition having: (a) at least one cycloolefin polymer comprising at least one repeating unit of Structure (I), and at least one repeating unit of Structure (II), and optionally at least one repeating unit of Structure (III) with the proviso that neither Structure (I) nor Structure (II) nor Structure (III) contains acid sensitive groups. b) at least one cross-linking agent selected from the group consisting of an amino or phenolic cross-linking agent; c) a least one thermal acid generator (TAG); d) at lest one solvent; and e) optionally, at least one surfactant.
• THERMALLY CURED UNDERLAYER FOR LITHOGRAPHIC APPLICATION
  申请人：De Binod B.

  公开号：US20120178871A1

  公开（公告）日：2012-07-12

  An etch resistant thermally curable Underlayer composition for use in a multiplayer lithographic process for producing a photolithographic bilayer coated substrate, the composirion being a composition of: (a) a polymer comprising repeating units of Structure I, II and III (b) at least one crosslinking agent; (c) at least one thermal acid generator; and (d) at least one solvent.
• US7754832B2
  申请人：——

  公开号：US7754832B2

  公开（公告）日：2010-07-13