4-(4-tert-Butoxybenzene-1-sulfonyl)phenol | 98116-82-6

• 分子结构分类: 有机化合物 - 苯类化合物 - 苯和取代衍生物
• 英文名称: 4-(4-tert-Butoxybenzene-1-sulfonyl)phenol
• 英文别名: 4-[4-[(2-methylpropan-2-yl)oxy]phenyl]sulfonylphenol
• CAS: 98116-82-6
• 化学式: C₁₆H₁₈O₄S
• 分子量: 306.4
• InChiKey: KBCSIKHOFZNAJV-UHFFFAOYSA-N

计算性质

• 辛醇/水分配系数(LogP)：
  3.2
• 重原子数：
  21
• 可旋转键数：
  4
• 环数：
  2.0
• sp3杂化的碳原子比例：
  0.25
• 拓扑面积：
  72
• 氢给体数：
  1
• 氢受体数：
  4

文献信息

• [EN] THERMOSETTING RESIN COMPOSITIONS<br/>[FR] COMPOSITIONS DE RÉSINE THERMODURCISSABLE
  申请人：HEXCEL COMPOSITES LTD

  公开号：WO2017108946A1

  公开（公告）日：2017-06-29

  Meta and para alkenyl phenols are reacted with hydroxyl benzophenone to produce compounds of the genera formula or which are used as curatives for polymaleimide resins.

  甲基和对烯基酚与羟基苯甲酮反应，产生通式化合物，用作聚马来酰亚胺树脂的固化剂。
• [EN] ALKENYLPHENOXY-SUBSTITUTED 1,1-DIPHENYLETHYLENES, PROCESSES FOR THEIR PREPARATION, AND THEIR USE<br/>[FR] 1,1-DIPHÉNYLÉTHYLÈNES SUBSTITUÉS PAR UN ALCÉNYLPHÉNOXY, LEURS PROCÉDÉS DE PRÉPARATION ET LEUR UTILISATION
  申请人：EVONIK TECHNOCHEMIE GMBH

  公开号：WO2017045932A1

  公开（公告）日：2017-03-23

  The present invention relates to compounds according to formula (I) and to heat-curable compositions based on polymaleimide resin systems comprising such compounds as co-monomers: wherein R1 is hydrogen or an alkenylphenoxy group, R2 is an alkenylphenoxy group, and R3 is hydrogen or an alkyl group with 1 to 4 carbon atoms. The present invention also relates to crosslinked resins obtainable by curing such compositions. Compounds of the present invention can be used amongst others in fields like structural adhesives, matrix resins for fiber prepregs, moulding compounds, as well as structural and/or electrical composites.

  本发明涉及根据式(I)的化合物以及基于聚马来酰亚胺树脂体系的热固性组合物，其中这些化合物作为共聚单体：其中R1是氢或烯基苯氧基，R2是烯基苯氧基，R3是氢或具有1至4个碳原子的烷基基团。本发明还涉及通过固化这种组合物获得的交联树脂。本发明的化合物可以在结构粘合剂、纤维预浸料的基质树脂、成型复合材料以及结构和/或电气复合材料等领域中使用。
• Process for producing diphenyl sulfone compound
  申请人：——

  公开号：US20030092941A1

  公开（公告）日：2003-05-15

  The present invention is to provide methods for producing highly pure 4,4′-dihydroxydiphenyl sulfone monoethers advantageously in industrial production. In a process for producing a compound represented by Formula (I) 1 (wherein, R 1 and R 2 are each independently halogen, alkyl having 1 to 8 carbons or alkenyl having 2 to 8 carbons; m and n are each independently 0 or an integer of 1 to 4; and R 3 is alkyl having 1 to 8 carbons, alkenyl having 2 to 8 carbons, cycloalkyl having 3 to 8 carbons or optionally substituted aralkyl), (1) a pH adjustment is carried out twice or more in the purification process, (2) an excessive amount of alkyl halide used is removed, (3) a solvent, such as water, containing 0.05 ppm or less of iron components is used, (4) tanks with corrosion-resistant layers over the inner walls are used, (6) a chelating agent is added, and (7) a means of drying with mechanical stir is applied.

  本发明提供了一种在工业生产中优势地生产高纯度4,4'-二羟基二苯基砜单醚的方法。在生产式(I)1所表示的化合物的过程中（其中，R1和R2分别独立地表示卤素、具有1至8个碳的烷基或具有2至8个碳的烯基；m和n分别独立地表示0或1至4的整数；R3表示具有1至8个碳的烷基、具有2至8个碳的烯基、具有3至8个碳的环烷基或可选地被取代的芳基烷基），(1)在纯化过程中进行两次或更多的pH调节，(2)去除使用过量的烷基卤化物，(3)使用含有0.05ppm或更少铁组分的溶剂，例如水，(4)使用具有耐腐蚀层的内壁的罐，(6)添加螯合剂，以及(7)应用机械搅拌干燥手段。
• RESIST UNDERLAYER FILM FORMING COMPOSITION CONTAINING SILICON HAVING NITROGEN-CONTAINING RING
  申请人：Nakajima Makoto

  公开号：US20120315765A1

  公开（公告）日：2012-12-13

  There is provided a resist underlayer film forming composition for lithography for forming a resist underlayer film capable of being used as a hardmask. A resist underlayer film forming composition for lithography, includes as a silane compound, a hydrolyzable organosilane, a hydrolysis product thereof, or a hydrolysis-condensation product thereof, wherein the hydrolyzable organosilane is a hydrolyzable organosilane of Formula (1): R 1 a R 2 b Si(R 3 ) 4−(a+b) Formula (1) wherein R 1 is Formula (2): in which R 4 is an organic group, and R 5 is a C 1-10 alkylene group, a hydroxyalkylene group, a sulfide bond, an ether bond, an ester bond, or a combination thereof, X 1 is Formula (3), Formula (4), or Formula (5): R 2 is an organic group, and R 3 is a hydrolysable group.

  提供了一种用于制备可用作硬面膜的光刻胶底层膜的抗性底层膜形成组合物。一种用于光刻胶底层膜形成的抗性底层膜形成组合物，包括硅烷化合物作为成分，所述硅烷化合物是可水解的有机硅烷、其水解产物或其水解缩合物，其中所述可水解的有机硅烷是式(1)的可水解的有机硅烷： R1aR2bSi(R3)4−(a+b) 式(1) 其中R1是式(2)： 其中R4是有机基团，R5是C1-10烷基、羟基烷基、硫化键、醚键、酯键或其组合，X1是式(3)、式(4)或式(5)： R2是有机基团，R3是可水解基团。
• SILICON-CONTAINING COMPOSITION FOR FORMATION OF RESIST UNDERLAYER FILM, WHICH CONTAINS ORGANIC GROUP CONTAINING PROTECTED ALIPHATIC ALCOHOL
  申请人：Takeda Satoshi

  公开号：US20130183830A1

  公开（公告）日：2013-07-18

  Described herein are compositions for forming an underlayer film for a solvent-developable resist. These compositions can include a hydrolyzable organosilane having a silicon atom bonded to an organic group containing a protected aliphatic alcohol group, a hydrolysate of the hydrolyzable organosilane, a hydrolysis-condensation product of the hydrolyzable organosilane, or a combination thereof and a solvent. The composition can form a resist underlayer film including, a hydrolyzable organosilane, a hydrolysate of the hydrolyzable organosilane, a hydrolysis-condensation product of the hydrolyzable organosilane, or a combination thereof, the silicon atom in the silane compound having a silicon atom bonded to an organic group containing a protected aliphatic alcohol group in a ratio of 0.1 to 40% by mol based on the total amount of silicon atoms. Also described is a method for applying the composition onto a semiconductor substrate and baking the composition to form a resist underlayer film.

  本文描述了用于形成溶剂可开发光刻胶底层膜的组合物。这些组合物可以包括一个水解性有机硅烷，其硅原子与含有受保护脂肪醇基团的有机基团结合，水解的水解性有机硅烷的水解缩合产物，或两者的组合物和溶剂。该组合物可以形成一个光刻胶底层膜，其中包括水解性有机硅烷，水解的水解性有机硅烷的水解缩合产物，或两者的组合物，硅烷化合物中的硅原子与含有受保护脂肪醇基团的有机基团的比例为总硅原子量的0.1至40%摩尔。还描述了一种将该组合物应用于半导体衬底并烘烤该组合物以形成光刻胶底层膜的方法。