Polymers based on cinnamic acid as a bottom antireflective coating for 157 NM photolithography
申请人:Hohle Christoph
公开号:US20050170283A1
公开(公告)日:2005-08-04
A bottom antireflective coating for photolithography at 157 nm or less, where the bottom antireflective coating includes a crosslinkable polymer which contains cinnamic acid derivatives.