1-(adamant-1-yloxy) ethyl acetate | 500541-84-4

• 分子结构分类: 有机化合物 - 有机酸及其衍生物 - 羧酸及其衍生物
• 英文名称: 1-(adamant-1-yloxy) ethyl acetate
• 英文别名: 1-(Adamant-1-yloxy)ethyl acetate；1-(1-adamantyloxy)ethyl acetate
• CAS: 500541-84-4
• 化学式: C₁₄H₂₂O₃
• 分子量: 238.327
• InChiKey: OJJSHVSYPUSSME-UHFFFAOYSA-N

物化性质

• 沸点：
  309.6±25.0 °C(Predicted)
• 密度：
  1.10±0.1 g/cm3(Predicted)

计算性质

• 辛醇/水分配系数(LogP)：
  3.2
• 重原子数：
  17
• 可旋转键数：
  4
• 环数：
  4.0
• sp3杂化的碳原子比例：
  0.93
• 拓扑面积：
  35.5
• 氢给体数：
  0
• 氢受体数：
  3

反应信息

• 作为产物：
  描述：

  1-金刚烷醇 生成 1-(adamant-1-yloxy) ethyl acetate 、 1-adamantanthyl ethyl ether
  参考文献：
  名称：

  Process for producing vinyl ether compounds

  摘要：

  该过程生产乙烯醚化合物，包括使得由以下化学式（1）表示的乙烯酯化合物发生反应：其中R1、R2、R3和R4相同或不同，每个都是氢原子或有机基团，与由以下化学式（2）表示的羟基化合物反应：其中R5是有机基团，在至少一种过渡元素化合物存在下，从而产生由以下化学式（3）表示的乙烯醚化合物：其中R2、R3、R4和R5的含义与上述定义相同。这样的过渡元素化合物包括铱化合物和其他含有第VIII族元素的化合物。

  公开号：

  US20030083529A1

文献信息

• SALT, ACID GENERATOR, RESIST COMPOSITION AND METHOD FOR PRODUCING RESIST PATTERN
  申请人：SUMITOMO CHEMICAL COMPANY, LIMITED

  公开号：US20210371376A1

  公开（公告）日：2021-12-02

  A salt represented by formula (I): wherein R 1 and R 2 each independently represent a hydroxy group, —O—R 10 , —O—CO—O—R 10 or —O-L 1 -CO—O—R 10 ; L 1 represents an alkanediyl group having 1 to 6 carbon atoms; R 4 , R 5 , R 7 and R 8 each independently represent a halogen atom, an alkyl fluoride group having 1 to 12 carbon atoms or a hydrocarbon group having 1 to 18 carbon atoms, the hydrocarbon group may have a substituent, and —CH 2 — included in the hydrocarbon group may be replaced by —O—, —CO—, —S— or —SO 2 —; R 10 represents an acid-labile group; X 1 and X 2 each independently represent an oxygen atom or a sulfur atom; m1 represents an integer of 1 to 5, m2 and m8 represent an integer of 0 to 5, m4, m5 and m7 represent an integer of 0 to 4; and AI − represents an organic anion.

  一种由化学式（I）表示的盐：其中R1和R2分别代表一个羟基，-O-R10，-O-CO-O-R10或-O-L1-CO-O-R10；L1代表具有1至6个碳原子的烷二基基团；R4、R5、R7和R8分别独立地表示卤素原子，具有1至12个碳原子的烷基氟基团或具有1至18个碳原子的碳氢基团，碳氢基团可能有取代基，并且碳氢基团中包含的-CH2-可被-O-，-CO-，-S-或-SO2-取代；R10代表一个酸敏感基团；X1和X2分别独立地表示一个氧原子或一个硫原子；m1表示1至5的整数，m2和m8表示0至5的整数，m4、m5和m7表示0至4的整数；AI-代表一个有机阴离子。
• SALT AND PHOTORESIST COMPOSITION CONTAINING THE SAME
  申请人：SUMITOMO CHEMICAL COMPANY, LIMITED

  公开号：US20190112265A1

  公开（公告）日：2019-04-18

  A salt comprising a group represented by the formula (aa): wherein X a and X b independently each represent an oxygen atom or a sulfur atom, and X 1 represents a C1-C12 saturated hydrocarbon group which has a moiety represented by formula (1 a ) or (2 a ):

  一种盐，其由公式（aa）表示的基团组成：其中Xa和Xb分别独立地表示氧原子或硫原子，而X1表示具有由公式（1a）或（2a）表示的基团的C1-C12饱和碳氢基团。
• SALT, QUENCHER, RESIST COMPOSITION AND METHOD FOR PRODUCING RESIST PATTERN
  申请人：SUMITOMO CHEMICAL COMPANY, LIMITED

  公开号：US20200387069A1

  公开（公告）日：2020-12-10

  Disclosed are a salt represented by formula (1), and a quencher and a resist composition comprising the same: wherein R 1 , R 2 and R 3 each independently represent a halogen atom, an alkyl fluoride group having 1 to 6 carbon atoms or a hydrocarbon group having 1 to 18 carbon atoms, and —CH 2 — included in the hydrocarbon group may be replaced by —O— or —CO—, m1, m2 and m3 represent an integer of 0 to 4, and when m1, m2 and/or m3 are 2 or more, a plurality of R 1 , a plurality of R 2 and/or a plurality of R 3 may be the same or different from each other, and X 1 represents —CO—, —SO— or —SO 2 —.

  公开了一种由式（1）表示的盐，以及包括该盐的淬灭剂和抗蚀组合物：其中R1、R2和R3分别独立表示卤素原子、具有1至6个碳原子的烷基氟基或具有1至18个碳原子的碳氢基，而包含在碳氢基中的—CH2—可被—O—或—CO—替代，m1、m2和m3代表0至4的整数，当m1、m2和/或m3为2或更多时，多个R1、多个R2和/或多个R3可能相同或不同，X1表示—CO—、—SO—或—SO2—。
• RESIST COMPOSITION AND METHOD FOR PRODUCING RESIST PATTERN
  申请人：SUMITOMO CHEMICAL COMPANY, LIMITED

  公开号：US20210286261A1

  公开（公告）日：2021-09-16

  Disclosed is a resist composition including a compound represented by formula (I), a resin having an acid-labile group and an acid generator, the resin having an acid-labile group including at least one selected from the group consisting of a structural unit represented by formula (a1-1) and a structural unit represented by formula (a1-2):

  揭示了一种耐受组合物，包括由式（I）表示的化合物、具有酸敏基团和酸发生剂的树脂，其中具有酸敏基团的树脂包括至少从以下组中选择的一种：由式（a1-1）表示的结构单元和由式（a1-2）表示的结构单元。
• RESIST POLYMER, RESIST COMPOSITION, PROCESS FOR PATTERN FORMATION, AND STARTING COMPOUNDS FOR PRODUCTION OF THE RESIST POLYMER
  申请人：Momose Hikaru

  公开号：US20090198065A1

  公开（公告）日：2009-08-06

  To provide a resist polymer comprising, as a structural unit, an acid-decomposable unit having a structure represented by formula (1) or (2) which exhibits a small line edge roughness and produces little defects in DUV excimer laser lithography or the like. In formulas (1) and (2), n represents an integer of 2 to 24; J represents a single bond or a divalent hydrocarbon group which may have a substituent/heteroatom when n=2, or represents an n-valent hydrocarbon group which may have a substituent/heteroatom when n≧3; E represents a residue of a polymerization terminator, a chain transfer agent or a polymerization initiator; K 1 and K 2 each represent at least one selected from alkylene, cycloalkylene, oxyalkylene, arylene, a divalent thiazoline ring, a divalent oxazoline ring and a divalent imidazoline ring; L 1 and L 2 each represent at least one selected from —C(O)O—, —C(O)— and —OC(O)—; M 1 , M 2 and M 3 each represent at least one selected from alkylene, cycloalkylene, oxyalkylene and arylene; Y, Y 1 and Y 2 each represent an acid-decomposable linkage; k1, k2, l1, l2, m1, m2, and m3 each represent 0 or 1; and R 1 represents H or a methyl group.

  提供一种抗蚀聚合物，其由一个具有结构式（1）或（2）所表示的酸分解单元作为结构单元，能够在DUV准分子激光微影或类似工艺中表现出小的线边粗糙度并产生少量缺陷。在式（1）和（2）中，n表示2至24的整数；J表示单键或二价碳氢基团，当n=2时可以具有取代基/杂原子，或者当n≥3时可以表示n价碳氢基团，可以具有取代基/杂原子；E表示聚合终止剂、链转移剂或聚合引发剂的残基；K1和K2分别表示至少选择自烷基、环烷基、氧烷基、芳烃、二价噻唑环、二价噁唑环和二价咪唑环中的至少一种；L1和L2分别表示至少选择自—C（O）O—、—C（O）—和—OC（O）—中的至少一种；M1、M2和M3分别表示至少选择自烷基、环烷基、氧烷基和芳烃中的至少一种；Y、Y1和Y2分别表示酸分解键；k1、k2、l1、l2、m1、m2和m3分别表示0或1；R1表示H或甲基基团。