申请人:Cabot Microelectronics Corporation
公开号:US20040266196A1
公开(公告)日:2004-12-30
The invention provides a method of polishing a substrate comprising (i) contacting a substrate comprising a noble metal layer with a chemical-mechanical polishing system comprising (a) a polishing component, (b) an oxidizing agent, and (c) a liquid carrier, and (ii) abrading at least a portion of the noble metal layer to polish the substrate. The polishing component is selected from the group consisting of an abrasive, a polishing pad, or a combination thereof, and the oxidizing agent is selected from the group consisting of bromates, bromites, hypobromites, chlorates, chlorites, hypochlorites, perchlorates, iodates, hypoiodites, periodates, peroxyacetic acid, organo-halo-oxy compounds, salts thereof, and combinations thereof. The chemical-mechanical polishing system has a pH of about 9 or less, and the oxidizing agent does not produce a substantial amount of elemental halogen. The invention also provides a method of polishing a substrate comprising a noble metal layer and a second layer using the aforementioned polishing system that further comprises a stopping compound.
本发明提供了一种抛光基底的方法,包括(i)将包含贵
金属层的基底与
化学机械抛光系统接触,该系统包含(a)抛光组分、(b)氧化剂和(c)液体载体,以及(ii)研磨贵
金属层的至少一部分以抛光基底。抛光组分选自由研磨剂、抛光垫或其组合组成的组,氧化剂选自由
溴酸盐、
溴酸盐、
次溴酸盐、
氯酸盐、
亚氯酸盐、
次氯酸盐、
高氯酸盐、
碘酸盐、次
碘酸盐、过
碘酸盐、
过氧乙酸、有机卤氧化合物、其盐及其组合组成的组。
化学机械抛光系统的 pH 值约为 9 或更低,氧化剂不会产生大量的卤素元素。本发明还提供了一种使用上述抛光系统对包括贵
金属层和第二层的基底进行抛光的方法,该抛光系统还包括一种止动化合物。