A method of using a metal complex as an n-dopant for doping an organic semiconducting matrix material in order to alter the latter's electrical characteristics is provided. In order to provide n-doped organic semiconductors with matrix materials having a low reduction potential, while achieving high conductivities, the n-dopant is a neutral electron-rich metal complex with a neutral or charged transition metal atom as a central atom and having at least 16 valence electrons. The complex can be polynuclear and can possess at least one metal-metal bond. At least one ligand can form a π complex with the central atom, which can be a bridge ligand, or it can contain at least one carbanion-carbon atom or a divalent atom. Methods for providing the novel n-dopants are provided.
                            提供了一种使用
金属配合物作为n-掺杂剂来掺杂有机半导体基质材料以改变后者电学特性的方法。为了提供具有低还原电位的基质材料的n-掺杂有机半导体,并实现高导电性,n-掺杂剂是具有中性电子丰富的
金属配合物,其中央原子为中性或带电的过渡
金属原子,并且至少具有16个价电子。该配合物可以是多核的,并且可以具有至少一个
金属-
金属键。至少一个
配体可以与中央原子形成π配合物,它可以是桥接
配体,或者它可以包含至少一个负离子-碳原子或二价原子。提供了制备新型n-掺杂剂的方法。