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12,13,13,14,14,15,15,16,16,16-Decafluor-12-trifluormethyl-heptadecansaeure-(1) | 813-16-1

中文名称
——
中文别名
——
英文名称
12,13,13,14,14,15,15,16,16,16-Decafluor-12-trifluormethyl-heptadecansaeure-(1)
英文别名
12.13.13.14.14.15.15.16.16.16-Decafluor-12-trifluormethyl-hexadecansaeure;12,13,13,14,14,15,15,16,16,16-Decafluoro-12-(trifluoromethyl)hexadecanoic acid
12,13,13,14,14,15,15,16,16,16-Decafluor-12-trifluormethyl-heptadecansaeure-(1)化学式
CAS
813-16-1
化学式
C17H21F13O2
mdl
——
分子量
504.332
InChiKey
VAFXQFPSGYOEPJ-UHFFFAOYSA-N
BEILSTEIN
——
EINECS
——
  • 物化性质
  • 计算性质
  • ADMET
  • 安全信息
  • SDS
  • 制备方法与用途
  • 上下游信息
  • 反应信息
  • 文献信息
  • 表征谱图
  • 同类化合物
  • 相关功能分类
  • 相关结构分类

计算性质

  • 辛醇/水分配系数(LogP):
    8.5
  • 重原子数:
    32
  • 可旋转键数:
    14
  • 环数:
    0.0
  • sp3杂化的碳原子比例:
    0.94
  • 拓扑面积:
    37.3
  • 氢给体数:
    1
  • 氢受体数:
    15

反应信息

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文献信息

  • Cleaning agent composition, method for cleaning and use thereof
    申请人:——
    公开号:US20010025017A1
    公开(公告)日:2001-09-27
    An object of the present invention is to provide a new cleaning agent composition having excellent cleaning power for the surface contamination of a semiconductor wafer or various precisely worked instruments made of glass or ceramic, which is used in the manufacture of wafer; a method for cleaning a wafer; a semiconductor wafer having a surface cleaned by a cleaning method; and a method for manufacturing a semiconductor wafer. A semiconductor wafer is cleaned using a cleaning agent composition including a specific fluorine-containing anionic surfactant, a quaternary ammonium hydroxide and/or an alkanolamine.
    本发明的目的是提供一种新的清洗剂组合物,该组合物对半导体晶片或用于制造晶片的各种由玻璃或陶瓷制成的精密加工器械的表面污染具有极佳的清洗能力;一种清洗晶片的方法;一种通过清洗方法清洗表面的半导体晶片;以及一种制造半导体晶片的方法。半导体晶片使用清洁剂组合物进行清洁,该清洁剂组合物包括特定的含氟阴离子表面活性剂、季铵氢氧化物和/或烷醇胺。
  • CLEANING AGENT COMPOSITION, CLEANING AND PRODUCTION METHODS FOR SEMICONDUCTOR WAFER, AND SEMICONDUCTOR WAFER
    申请人:Showa Denko K.K.
    公开号:EP1572856A1
    公开(公告)日:2005-09-14
  • CLEANING AGENT COMPOSITION, CLEANING AND PRODUCTION METHODS FOR SEMICONDUCTOR WAFER
    申请人:Showa Denko K.K.
    公开号:EP1572856B1
    公开(公告)日:2008-02-13
  • Cleaning agent composition, cleaning and production methods for semiconductor wafer, and semiconductor wafer
    申请人:Amemiya Masahiro
    公开号:US20070010411A1
    公开(公告)日:2007-01-11
    A cleaning agent composition comprising a nonionic surfactant represented by the following formula (1): R1O(EO)x(PO)yH (I)(wherein R1 represents a linear or branched alkyl group having from 6 to 20 carbon atoms or a linear or branched alkenyl group having from 6 to 20 carbon atoms, EO represents an oxyethylene group, PO represents an oxypropylene group, EO and PO each is bonded by random addition or block addition, x number of EOs and y number of POs are arranged in an arbitrary order, x and y each independently represents an integer of 1 to 20, and x/(x+y) is 0.5 or more) and a quaternary ammonium hydroxide) is provided. Also, cleaning and production methods for semiconductor wafer using the cleaning agent composition and semiconductor wafer produced by the production method are provided.
  • Ink-jet recording ink set and ink-jet recording method
    申请人:Umebayashi Tsutomu
    公开号:US20070206045A1
    公开(公告)日:2007-09-06
    An ink-jet recording ink set, comprising at least one recording liquid containing a colorant and a polymerizable compound and an ink spread suppressing liquid containing at least one surfactant and substantially no colorant, wherein all of the following conditions (A), (B) and (C) are satisfied, and an ink-jet recording method using the same: (A) the surface tension of the ink spread suppressing liquid is smaller than that of at least one recording liquid contained in the ink-jet recording ink set; (B) at least one of the surfactants contained in the ink spread suppressing liquid satisfies the following relationship: γ s (0)−γ s (saturated)>1 mN/m; and (C) the surface tension of the ink spread suppressing liquid satisfies the following relationship: γ s <(γ s (0)+γ s (saturated) max )/ 2.
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