甲基丙烯酸-(1-甲基辛基酯) | 100545-05-9

• 分子结构分类: 有机化合物 - 脂质和类脂质分子 - 脂肪酰基
• 中文名称: 甲基丙烯酸-(1-甲基辛基酯)
• 英文名称: methacrylic acid-(1-methyl-octyl ester)
• 英文别名: Methacrylsaeure-(1-methyl-octylester)；(1-Methyl-octyl)-methacrylat；Nonan-2-yl 2-methylprop-2-enoate
• CAS: 100545-05-9
• 化学式: C₁₃H₂₄O₂
• 分子量: 212.332
• InChiKey: BCOOSHHVXCBHMC-UHFFFAOYSA-N

计算性质

• 辛醇/水分配系数(LogP)：
  4.9
• 重原子数：
  15
• 可旋转键数：
  9
• 环数：
  0.0
• sp3杂化的碳原子比例：
  0.77
• 拓扑面积：
  26.3
• 氢给体数：
  0
• 氢受体数：
  2

反应信息

• 作为产物：
  描述：

  2-壬醇 、 甲基丙烯酸甲酯 在 tetrabutoxytitanium 作用下， 生成 甲基丙烯酸-(1-甲基辛基酯)
  参考文献：
  名称：

  聚（甲基丙烯酸烷基酯）的伽马辐照

  摘要：

  一系列聚（甲基丙烯酸烷基酯）由高纯度单体制备并经受伽马辐射。对于聚（甲基丙烯酸正庚酯），在 15 Mreps 下检测到正烷基系列中的凝胶化；随着烷基长度的增加，在较低剂量下检测到凝胶。聚（甲基丙烯酸仲烷基酯）照射到较高剂量时未发现凝胶化；聚（甲基丙烯酸仲壬酯）在 40 Mreps 辐照后仍可溶解。讨论了与早期聚（丙烯酸烷基酯）辐照工作的相关性。

  DOI：

  10.1002/pol.1959.1203813318

文献信息

• Silicon-containing polymer, resist composition and patterning process
  申请人：Shin-Etsu Chemical Co., Ltd.

  公开号：US20020168581A1

  公开（公告）日：2002-11-14

  Novel silicon-containing polymers are obtained by copolymerizing a vinylsilane monomer with a compound having a low electron density unsaturated bond such as maleic anhydride, maleimide derivatives or tetrafluoroethylene. Using the polymers, chemical amplification positive resist compositions sensitive to high-energy radiation and having a high sensitivity and resolution at a wavelength of less than 300 nm and improved resistance to oxygen plasma etching are obtained.

  通过将乙烯基硅烷单体与具有低电子密度不饱和键（如马来酸酐、马来酰亚胺衍生物或四氟乙烯）的化合物共聚，可获得新型含硅聚合物。使用这种聚合物，可以获得对高能辐射敏感的化学放大正向抗蚀剂组合物，在波长小于 300 纳米时具有高灵敏度和高分辨率，并提高了抗氧等离子体蚀刻的能力。
• Polymer, resist composition and patterning process
  申请人：Funatsu Kenji

  公开号：US20050282083A1

  公开（公告）日：2005-12-22

  A polymer comprising recurring units having formulae (1) and (2) and having a weight average molecular weight of 1,000 to 50,000. In the formulae, R 1 and R 3 are H or CH 3 , R 4 is alkylene, R 2 is a lactone structure-containing substituent group selected from formulae (R 2 -1) to (R 2 -4) wherein Y is CH 2 or O, R 5 is CO 2 R 7 when Y is CH 2 , or R 5 is H or CO 2 R 7 when Y is O, R 6 is H or alkyl, and R 7 is alkyl which may be separated by at least one oxygen atom. The polymer is used as a base resin to formulate a resist composition, especially a chemically amplified positive resist composition which has a high sensitivity, resolution and dry etch resistance and forms a resist pattern having good substrate adhesion and least roughened sidewalls.

  一种聚合物，由具有式（1）和（2）的递归单元组成，其重量平均分子量为 1,000 至 50,000。式中，R 1 和 R 3 是 H 或 CH 3 , R 4 是烯烃，R 2 是一个含内酯结构的取代基，选自式（R 2 -1）至（R 2 -4），其中 Y 是 CH 2 或 O，R 5 是 CO 2 R 7 当 Y 是 CH 2 或 R 5 是 H 或 CO 2 R 7 当 Y 为 O 时，R 6 是 H 或烷基，而 R 7 是烷基，可被至少一个氧原子隔开。该聚合物可用作基树脂来配制抗蚀剂组合物，特别是化学放大正向抗蚀剂组合物，它具有高灵敏度、高分辨率和耐干蚀刻性，并能形成具有良好基底附着力和最少粗糙侧壁的抗蚀图案。
• ON-AQUEOUS COMPOSITIONS OF POLYMERS DERIVED FROM MONOMERS HAVING ACRYLOYL MOIETY AND LACTAM MOIETY AND APPLICATIONS THEREOF
  申请人：ISP Investments LLC

  公开号：EP3377547A1

  公开（公告）日：2018-09-26
• Positive resist compositions and patterning process
  申请人：Hatakeyama Jun

  公开号：US20070072115A1

  公开（公告）日：2007-03-29

  A polymer is obtained from (meth)acrylate having a bridged ring lactone group, (meth)acrylate having an acid-labile leaving group, and (meth)acrylate having a hydroxynaphthyl pendant. A positive resist composition comprising the polymer as a base resin, when exposed to high-energy radiation and developed, exhibits a high sensitivity, a high resolution, and a minimal line edge roughness due to controlled swell during development, and leaves minimal residues following development.
• SALT AND PHOTORESIST COMPOSITION COMPRISING THE SAME
  申请人：ICHIKAWA Koji

  公开号：US20110200940A1

  公开（公告）日：2011-08-18

  The present invention provides a salt represented by the formula (I): wherein R 1 and R 2 each independently represent a fluorine atom or a C1-C6 perfluoroalkyl group, X 1 represents a C1-C17 divalent saturated hydrocarbon group in which one or more —CH 2 — can be replaced by —O— or —CO— and which can have one or more fluorine atoms, R 3 represents a hydrogen atom or a methyl group, and Z 1+ represents an organic counter cation, and a photoresist composition containing the same.