5-ethynylisophthalic acid chloride | 393543-05-0

• 分子结构分类: 有机化合物 - 苯类化合物 - 苯和取代衍生物
• 英文名称: 5-ethynylisophthalic acid chloride
• 英文别名: 1,3-Benzenedicarbonyl dichloride, 5-ethynyl-；5-ethynylbenzene-1,3-dicarbonyl chloride
• CAS: 393543-05-0
• 化学式: C₁₀H₄Cl₂O₂
• 分子量: 227.047
• InChiKey: DHOXKQJKDHODIN-UHFFFAOYSA-N

计算性质

• 辛醇/水分配系数(LogP)：
  3.2
• 重原子数：
  14
• 可旋转键数：
  3
• 环数：
  1.0
• sp3杂化的碳原子比例：
  0.0
• 拓扑面积：
  34.1
• 氢给体数：
  0
• 氢受体数：
  2

反应信息

• 作为反应物：
  描述：

  5-ethynylisophthalic acid chloride 在 三氟甲磺酸三甲基硅酯 、 N,N-二异丙基乙胺 作用下， 以 二氯甲烷 、 1,2-二氯乙烷 为溶剂， 反应 81.0h， 生成 bis(perfluorophenyl) 5-((3-oxo-1_λ³-benzo[d][1,2]iodaoxol-1(3H)-yl)ethynyl)isophthalate
  参考文献：
  名称：

  高价碘试剂实现未保护肽的 Cys-Cys 和 Cys-Lys 缝合

  摘要：

  轻松获得各种结构多样的钉合肽对于开发蛋白质-蛋白质相互作用抑制剂至关重要。在此，我们报告了用于双组分半胱氨酸-半胱氨酸和半胱氨酸-赖氨酸装订的双功能高价碘试剂，产生结构多样的硫代炔连接体。这种装订方法适用于未受保护的天然氨基酸残基，不需要预功能化或金属催化。该产品对纯化和分离稳定。装订后修饰可以通过活化酯的酰胺化或通过在形成的硫代炔基上的环加成来实现。i,i+ 7 钉合肽的螺旋度和与 MDM2 的结合亲和力增加。

  DOI：

  10.1002/anie.202014511
• 作为产物：
  描述：

  5-乙炔基间苯二甲酸 在 草酰氯 作用下， 以 二氯甲烷 、 N,N-二甲基甲酰胺 为溶剂， 反应 2.0h， 生成 5-ethynylisophthalic acid chloride
  参考文献：
  名称：

  高价碘试剂实现未保护肽的 Cys-Cys 和 Cys-Lys 缝合

  摘要：

  轻松获得各种结构多样的钉合肽对于开发蛋白质-蛋白质相互作用抑制剂至关重要。在此，我们报告了用于双组分半胱氨酸-半胱氨酸和半胱氨酸-赖氨酸装订的双功能高价碘试剂，产生结构多样的硫代炔连接体。这种装订方法适用于未受保护的天然氨基酸残基，不需要预功能化或金属催化。该产品对纯化和分离稳定。装订后修饰可以通过活化酯的酰胺化或通过在形成的硫代炔基上的环加成来实现。i,i+ 7 钉合肽的螺旋度和与 MDM2 的结合亲和力增加。

  DOI：

  10.1002/anie.202014511

文献信息

• Aromatic carboxylic acids, acid halides thereof and processes for preparing both
  申请人：——

  公开号：US20040068139A1

  公开（公告）日：2004-04-08

  A novel aromatic carboxylic acid useful as a material for macromolecular compounds and, in particular, for polycondensed macromolecular compounds exhibiting excellent heat resistance, an acid halide derivative thereof and a process for producing these compounds are disclosed. The aromatic carboxylic acid and the acid halide derivative thereof have structures represented general formulae (1) and (2), respectively, and can be efficiently produced from a dialkyl ester derivative of isophthalic acid and an acetylene derivative in accordance with the disclosed process comprising specific steps. 1 In the above formulae, A represents: —C≡C—R 1 ( a ) or 2 (R 1 represents hydrogen atom, an alkyl group or an aromatic group, R 2 represents an alkyl group or an aromatic group) and X represents a halogen atom.

  本发明揭示了一种新的芳香族羧酸，可用作大分子化合物的材料，特别是用于表现出优异耐热性的聚缩酸大分子化合物，以及其酸卤化衍生物和生产这些化合物的方法。所述芳香族羧酸和其酸卤化衍生物的结构分别表示为通式（1）和（2），可以通过本发明揭示的特定步骤的方法从异苯二甲酸的二烷基酯衍生物和乙炔衍生物高效地生产。在上述公式中，A表示：-C≡C-R1（a）或2（R1表示氢原子，烷基或芳香基，R2表示烷基或芳香基），X表示卤素原子。
• Precursor of a heat resistant resin, heat resistant resin, insulating film and semiconductor device
  申请人：——

  公开号：US20020013443A1

  公开（公告）日：2002-01-31

  A precursor of a polybenzoxazole resin which comprises a crosslinking group in a molecule and has a specific structure, a polybenzoxazole resin obtained from the precursor by the condensation reaction and the crosslinking reaction, an insulating film comprising the polybenzoxazole resin and a semiconductor device comprising an insulating interlayer film in multi-layer wiring or a film for protecting surfaces which comprises the above insulating film. The precursor exhibits excellent processability due to excellent solubility in solvents and, after the ring closure, excellent heat stability in applications. The resin exhibits excellent electric, physical and mechanical properties and is advantageously used for insulating interlayer films of semiconductor devices and the like applications.

  一种聚苯并咪唑树脂的前体，其分子中包含交联基团并具有特定的结构，通过缩合反应和交联反应获得的聚苯并咪唑树脂，包括聚苯并咪唑树脂的绝缘膜以及包括上述绝缘膜的多层布线中的绝缘中间层膜或用于保护表面的膜的半导体器件。由于前体在溶剂中具有优异的溶解性，因此表现出优异的加工性能，并且在环闭后具有优异的热稳定性能，树脂表现出优异的电学、物理和机械性能，可优点地用于半导体器件的绝缘中间层膜等应用。
• Material for an insulating film, coating varnish for an insulating film, and insulating film and semiconductor device using the same
  申请人：——

  公开号：US20040002572A1

  公开（公告）日：2004-01-01

  A material for an insulating film which comprises a copolymer obtained by reacting a polyamide having a specific structure and a reactive oligomer as a component forming the film; a coating varnish for an insulating film which comprises this material and an organic solvent; an insulating film which comprises a layer of a resin comprising as a main structure a polybenzoxazole which is obtained by treating the above material or the above coating varnish by heating so that condensation reaction and crosslinking reaction take place and has fine pores; and a semiconductor device which comprises an insulating interlayer film for multi-layer wiring comprising the insulating film and/or a surface protective film comprising the insulating film. Excellent electrical, thermal and mechanical properties are exhibited and a low permittivity can be achieved.

  一种绝缘薄膜材料，包括由特定结构的聚酰胺和反应性低聚物作为成膜组分所反应得到的共聚物；一种用于绝缘薄膜的涂覆清漆，包括该材料和有机溶剂；一种绝缘薄膜，包括一层树脂，其主要结构为通过热处理上述材料或上述涂覆清漆得到的聚苯并咪唑，发生缩聚反应和交联反应并具有细小孔隙；以及一种半导体器件，包括用于多层布线的绝缘中间层膜，包括上述绝缘薄膜和/或表面保护膜，包括上述绝缘薄膜。具有优异的电性能、热性能和机械性能，并且可以实现低介电常数。
• RESIN COMPOSITION, VARNISH, RESIN FILM AND SEMICONDUCTOR DEVICE USING THE SAME
  申请人：Fujita Kazuyoshi

  公开号：US20090118431A1

  公开（公告）日：2009-05-07

  A main object of the present invention is to provide a resin composition having high heat resistance and a low dielectric constant, a varnish thereof, a resin film thereof and a semiconductor device using the same. In the present invention, the object is achieved by a resin composition comprising a compound having a structure represented by formula (1) and a crosslinking agent: wherein in formula (1), R 0 is a single bond or has a structure represented by formula (2); R 1 to R 8 are respectively any of hydrogen, a group having an alicyclic structure, an organic group having 1 to 10 carbon atoms other than the group having an alicyclic structure, a hydroxyl group and a carboxyl group; and “X” is any of —O—, —NHCO—, —CONH—, —COO— and —OCO—; further, wherein in formula (2), “Ar” is an aromatic group; “Y” is any of a single bond —O—, —S—, —OCO— and —COO—; “q” is an integer of 1 or more; R 9 is hydrogen or an organic group having 1 or more carbon atoms and may be identical with or different from each other when “q” is an integer of 2 or more; at least one of R 1 to R 8 is the group having an alicyclic structure when R 0 is a single bond; at least one of R 1 to R 9 is the group having an alicyclic structure when R 0 has the structure represented by formula (2); and “*” and “**” represent a position to be bonded to a different chemical structure.

  本发明的主要目的是提供一种具有高耐热性和低介电常数的树脂组合物，其清漆，树脂膜以及使用该组合物的半导体器件。在本发明中，通过包括具有以下结构的化合物和交联剂的树脂组合物来实现该目标：其中在公式（1）中，R0是单键或具有以下结构的化合物（2）；R1到R8分别为氢、具有脂环结构的基团、具有1到10个碳原子的有机基团（不包括具有脂环结构的基团）、羟基和羧基中的任意一种；“X”是以下任意一种：—O—、—NHCO—、—CONH—、—COO—和—OCO—；此外，在公式（2）中，“Ar”是芳香族基团；“Y”是以下任意一种：单键—O—、—S—、—OCO—和—COO—；“q”是1或更多的整数；当“q”是2或更多的整数时，R9是氢或具有1个或更多碳原子的有机基团，并且可以相同或不同；当R0是单键时，R1到R8中至少有一个是具有脂环结构的基团；当R0具有以下结构的化合物（2）时，R1到R9中至少有一个是具有脂环结构的基团；“*”和“**”表示要与不同化学结构结合的位置。
• HEAT-RESISTANT RESIN PRECURSOR, HEAT-RESISTANT RESIN AND INSULATING FILM AND SEMICONDUCTOR DEVICE
  申请人：SUMITOMO BAKELITE CO., LTD.

  公开号：EP1327653A1

  公开（公告）日：2003-07-16

  A precursor of a polybenzoxazole resin which comprises a crosslinking group in a molecule and has a specific structure, a polybenzoxazole resin obtained from the precursor by the condensation reaction and the crosslinking reaction, an insulating film comprising the polybenzoxazole resin and a semiconductor device comprising an insulating interlayer film in multi-layer wiring or a film for protecting surfaces which comprises the above insulating film. The precursor exhibits excellent processability due to excellent solubility in solvents and, after the ring closure, excellent heat stability in applications. The resin exhibits excellent electric, physical and mechanical properties and is advantageously used for insulating interlayer films of semiconductor devices and the like applications.

  一种在分子中含有交联基团并具有特定结构的聚苯并恶唑树脂前体，一种由该前体通过缩合反应和交联反应得到的聚苯并恶唑树脂，一种由该聚苯并恶唑树脂组成的绝缘膜，以及一种由多层布线中的绝缘夹层膜或由上述绝缘膜组成的表面保护膜组成的半导体器件。前体在溶剂中具有极佳的溶解性，因此具有极佳的加工性，并且在闭环后具有极佳的热稳定性。该树脂具有优异的电气、物理和机械性能，可用于半导体设备的绝缘夹层薄膜和类似用途。