{2-[2-(2-Mercapto-ethoxy)-ethoxy]-ethoxy}-acetic acid | 200291-35-6

• 分子结构分类: 有机化合物 - 有机酸及其衍生物 - 羧酸及其衍生物
• 英文名称: {2-[2-(2-Mercapto-ethoxy)-ethoxy]-ethoxy}-acetic acid
• 英文别名: 2-[2-[2-(2-Mercaptoethoxy)ethoxy]ethoxy]acetic Acid；2-[2-[2-(2-sulfanylethoxy)ethoxy]ethoxy]acetic acid
• CAS: 200291-35-6
• 化学式: C₈H₁₆O₅S
• 分子量: 224.278
• InChiKey: OQVCAAVSSRTKKR-UHFFFAOYSA-N

计算性质

• 辛醇/水分配系数(LogP)：
  -0.3
• 重原子数：
  14
• 可旋转键数：
  10
• 环数：
  0.0
• sp3杂化的碳原子比例：
  0.88
• 拓扑面积：
  66
• 氢给体数：
  2
• 氢受体数：
  6

反应信息

• 作为反应物：
  描述：

  {2-[2-(2-Mercapto-ethoxy)-ethoxy]-ethoxy}-acetic acid 、 dioleoyl maleate 生成 2-{2-[2-(2-Carboxymethoxy-ethoxy)-ethoxy]-ethylsulfanyl}-succinic acid bis-((Z)-octadec-9-enyl) ester
  参考文献：
  名称：

  Quantitative Studies of Binding between Synthetic Galactosyl Ceramide Analogues and HIV-1 Gp120 at Planar Membrane Surfaces

  摘要：

  A critical spacer arm length necessary to promote efficient binding of the HIV-1 surface glycoprotein rgp120 to several synthetic galactosyl-conjugated lipids, reconstituted into planar lipid bilayers, was identified. This should aid the design of anti-HIV-1 agents based on membrane-tethered, carbohydrate-based receptors for gp120.

  DOI：

  10.1002/1521-3773(20010618)40:12<2320::aid-anie2320>3.0.co;2-x

文献信息

• Chemical mechanical polishing method for tungsten
  申请人：Rohm and Haas Electronic Materials CMP Holdings, Inc.

  公开号：US10286518B2

  公开（公告）日：2019-05-14

  A process for chemical mechanical polishing a substrate containing tungsten is disclosed to reduce corrosion rate and inhibit dishing of the tungsten and erosion of underlying dielectrics. The process includes providing a substrate; providing a polishing composition, containing, as initial components: water; an oxidizing agent; a thiolalkoxy compound; a dicarboxylic acid, a source of iron ions; a colloidal silica abrasive; and, optionally a pH adjusting agent; providing a chemical mechanical polishing pad, having a polishing surface; creating dynamic contact at an interface between the polishing pad and the substrate; and dispensing the polishing composition onto the polishing surface at or near the interface between the polishing pad and the substrate; wherein some of the tungsten (W) is polished away from the substrate, corrosion rate is reduced, dishing of the tungsten (W) is inhibited as well as erosion of dielectrics underlying the tungsten (W).

  本发明公开了一种对含有钨的基底进行化学机械抛光的工艺，以降低腐蚀率并抑制钨的剥离和底层电介质的侵蚀。该工艺包括提供基底；提供抛光组合物，其初始成分包括水；氧化剂；硫醇烷氧基化合物；二羧酸；铁离子源；胶体二氧化硅磨料；以及可选的 pH 值调节剂；提供具有抛光表面的化学机械抛光垫；在抛光垫和基底之间的界面上产生动态接触；在抛光垫和基底之间的界面处或界面附近将抛光组合物分配到抛光表面上；其中，部分钨（W）被抛光离开基底，腐蚀率降低，钨（W）的分层以及钨（W）下层电介质的侵蚀受到抑制。
• CHEMICAL MECHANICAL POLISHING METHOD FOR TUNGSTEN
  申请人：Rohm and Haas Electronic Materials CMP Holdings, Inc.

  公开号：US20180216240A1

  公开（公告）日：2018-08-02

  A process for chemical mechanical polishing a substrate containing tungsten is disclosed to reduce corrosion rate and inhibit dishing of the tungsten and erosion of underlying dielectrics. The process includes providing a substrate; providing a polishing composition, containing, as initial components: water; an oxidizing agent; a thiolalkoxy compound; a dicarboxylic acid, a source of iron ions; a colloidal silica abrasive; and, optionally a pH adjusting agent; providing a chemical mechanical polishing pad, having a polishing surface; creating dynamic contact at an interface between the polishing pad and the substrate; and dispensing the polishing composition onto the polishing surface at or near the interface between the polishing pad and the substrate; wherein some of the tungsten (W) is polished away from the substrate, corrosion rate is reduced, dishing of the tungsten (W) is inhibited as well as erosion of dielectrics underlying the tungsten (W).
• Quantitative Studies of Binding between Synthetic Galactosyl Ceramide Analogues and HIV-1 Gp120 at Planar Membrane Surfaces
  作者：Yingmei Gu、Rachel LaBell、David F. O'Brien、S. Scott Saavedra

  DOI：10.1002/1521-3773(20010618)40:12<2320::aid-anie2320>3.0.co;2-x

  日期：2001.6.18

  A critical spacer arm length necessary to promote efficient binding of the HIV-1 surface glycoprotein rgp120 to several synthetic galactosyl-conjugated lipids, reconstituted into planar lipid bilayers, was identified. This should aid the design of anti-HIV-1 agents based on membrane-tethered, carbohydrate-based receptors for gp120.