A composition for forming an antireflective coating for use in a photolithography process using exposure light of up to 200 nm comprises a silicon-containing polymer obtained through hydrolytic condensation of a silicon-silicon bond-containing silane compound having formula: R(6-m)Si2Xm wherein R is a monovalent hydrocarbon group, X is alkoxy, alkanoyloxy or halogen, and m is 3 to 6. The composition allows the overlying photoresist film to be patterned to a satisfactory profile and has a high etching selectivity relative to organic material so that a substrate can be processed at a high accuracy.
一种用于形成抗反射涂层的组合物,可在使用 200 纳米以下曝光光的光刻工艺中使用,该组合物包括一种通过
水解缩合含
硅-
硅键的
硅烷化合物而获得的含
硅聚合物,该
硅烷化合物的
化学式如下: R(6-m)Si2Xm 其中 R 是一价烃基,X 是烷氧基、烷酰氧基或卤素,m 是 3 至 6:R(6-m)Si2Xm 其中 R 为一价烃基,X 为烷氧基、烷酰氧基或卤素,m 为 3 至 6。该组合物可将上覆的光刻胶膜图案化为令人满意的轮廓,并且相对于有机材料具有较高的蚀刻选择性,从而可对基底进行高精度加工。