azido(dichloro)gallane;N,N-dimethylmethanamine | 188658-37-9

• 分子结构分类: 有机化合物 - 有机1,3-偶极化合物 - 烯丙基型1,3-偶极有机化合物
• 英文名称: azido(dichloro)gallane;N,N-dimethylmethanamine
• CAS: 188658-37-9
• 化学式: C₃H₉Cl₂GaN₄
• 分子量: 241.76
• InChiKey: BMSHCEVZUYTVDE-UHFFFAOYSA-L

计算性质

• 辛醇/水分配系数(LogP)：
  1.94
• 重原子数：
  10
• 可旋转键数：
  0
• 环数：
  0.0
• sp3杂化的碳原子比例：
  1.0
• 拓扑面积：
  17.6
• 氢给体数：
  0
• 氢受体数：
  3

反应信息

• 作为反应物：
  描述：

  azido(dichloro)gallane;N,N-dimethylmethanamine 以 neat (no solvent) 为溶剂， 生成 gallium nitride
  参考文献：
  名称：

  Synthesis and Structure of a Novel Lewis Acid−Base Adduct, (H₃C)₃SiN₃·GaCl₃, en Route to Cl₂GaN₃ and Its Derivatives:  Inorganic Precursors to Heteroepitaxial GaN

  摘要：

  The formation of a novel Lewis acid-base complex between the silyl azide Si(CH3)(3)N-3 and GaCl3 having the formula (H3C)(3)SiN3 . GaCl3 (1) is demonstrated. The X-ray crystal structure of 1 shows that the electron-donating site is the nitrogen atom directly bonded to the organometallic group. Compound 1 crystallizes in the orthorhombic space group Pnma, with cell. dimensions a = 15.823(10) Angstrom, b = 10.010(5) Angstrom, c = 7.403(3) Angstrom, and Z = 4. Low-temperature decomposition of 1 via loss of (H3C)(3)SiCl yields Cl2GaN3 (2), which serves as the first totally inorganic (C,H-free) precursor to heteroepitaxial GaN by ultrahigh-vacuum chemical vapor deposition. A volatile monomeric Lewis acid-base adduct of 2 with trimethylamine, Cl2GaN3 . N(CH3)(3) (3), has also been prepared and utilized to grow high-quality GaN on Si and basal plane sapphire substrates. The valence bond model is used to analyze bond lengths in organometallic azides and related adducts.

  DOI：

  10.1021/ic961273r
• 作为产物：
  描述：

  azidodichlorogallane 、 三甲胺 以 二氯甲烷 为溶剂， 生成 azido(dichloro)gallane;N,N-dimethylmethanamine
  参考文献：
  名称：

  Synthesis and Structure of a Novel Lewis Acid−Base Adduct, (H₃C)₃SiN₃·GaCl₃, en Route to Cl₂GaN₃ and Its Derivatives:  Inorganic Precursors to Heteroepitaxial GaN

  摘要：

  The formation of a novel Lewis acid-base complex between the silyl azide Si(CH3)(3)N-3 and GaCl3 having the formula (H3C)(3)SiN3 . GaCl3 (1) is demonstrated. The X-ray crystal structure of 1 shows that the electron-donating site is the nitrogen atom directly bonded to the organometallic group. Compound 1 crystallizes in the orthorhombic space group Pnma, with cell. dimensions a = 15.823(10) Angstrom, b = 10.010(5) Angstrom, c = 7.403(3) Angstrom, and Z = 4. Low-temperature decomposition of 1 via loss of (H3C)(3)SiCl yields Cl2GaN3 (2), which serves as the first totally inorganic (C,H-free) precursor to heteroepitaxial GaN by ultrahigh-vacuum chemical vapor deposition. A volatile monomeric Lewis acid-base adduct of 2 with trimethylamine, Cl2GaN3 . N(CH3)(3) (3), has also been prepared and utilized to grow high-quality GaN on Si and basal plane sapphire substrates. The valence bond model is used to analyze bond lengths in organometallic azides and related adducts.

  DOI：

  10.1021/ic961273r