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[(azide)2Ga(Et)]n | 175353-26-1

中文名称
——
中文别名
——
英文名称
[(azide)2Ga(Et)]n
英文别名
diazido(ethyl)gallane
[(azide)2Ga(Et)]n化学式
CAS
175353-26-1
化学式
C2H5GaN6
mdl
——
分子量
182.825
InChiKey
GGLVHQYHELITJN-UHFFFAOYSA-N
BEILSTEIN
——
EINECS
——
  • 物化性质
  • 计算性质
  • ADMET
  • 安全信息
  • SDS
  • 制备方法与用途
  • 上下游信息
  • 反应信息
  • 文献信息
  • 表征谱图
  • 同类化合物
  • 相关功能分类
  • 相关结构分类

计算性质

  • 辛醇/水分配系数(LogP):
    None
  • 重原子数:
    None
  • 可旋转键数:
    None
  • 环数:
    None
  • sp3杂化的碳原子比例:
    None
  • 拓扑面积:
    None
  • 氢给体数:
    None
  • 氢受体数:
    None

反应信息

  • 作为反应物:
    描述:
    奎宁环[(azide)2Ga(Et)]n甲苯 为溶剂, 以80%的产率得到(azide)2Ga(Et)(NC7H13)
    参考文献:
    名称:
    Lewis Base Adduct Stabilized Organogallium Azides:  Synthesis and Dynamic NMR Spectroscopic Studies of Novel Precursors to Gallium Nitride and Role of Ammonia as Reactive Carrier Gas
    摘要:
    The organogallium azides (N-3)(2-a)(R)(a)Ga[(CH2)(3)NMe(2)](1-a) (1a-c: R = CH3, (t)Bu; a = 0, 1), (Et)(N-3)(2)Ga (2a), and (Et)(N-3)(2)Ga . L(2b-d: L = thf, H(2)N(t)Bu, py, NC7H13) are quantitatively synthesized by salt metathesis from the chloro species (Cl)(2-a)(R)(a)Ga[(CH2)(3)NMe(2)](1-a) (a = 0, 1) or EtGaCl(2) and sodium azide. The preferential ammonolysis of Ga-N-3 bonds for [Et(2)Ga(N-3)](3) (4) and 1 and 2 is demonstrated; e.g. the dimer Et(2)Ga(mu-NH2)(mu-N-3)GaEt(2) (3) was obtained. The characterization of these compounds by means of elemental analysis, H-1-, C-13-, N-14-, and N-15-NMR, MS, and infrared nu(N-3) data is reported. The dynamics of the intramolecular Ga-N donor-acceptor bonded heterocycle and the azide group is discussed on the basis of variable-temperature NMR data. The barrier of activation of the bimolecular azide exchange process for (N-3)(2)Ga[(CH2)(3)NMe(2)] (1c) amounts about 50 kJ . mol(-1). The role of ammonia as reactive carrier gas for low-pressure metal organic chemical vapor deposition (MOCVD) of GaN with 1c as precursor is discussed.
    DOI:
    10.1021/om950926t
  • 作为产物:
    描述:
    [Cl2GaEt]2 、 sodium azide 以 四氢呋喃 为溶剂, 以99%的产率得到[(azide)2Ga(Et)]n
    参考文献:
    名称:
    Lewis Base Adduct Stabilized Organogallium Azides:  Synthesis and Dynamic NMR Spectroscopic Studies of Novel Precursors to Gallium Nitride and Role of Ammonia as Reactive Carrier Gas
    摘要:
    The organogallium azides (N-3)(2-a)(R)(a)Ga[(CH2)(3)NMe(2)](1-a) (1a-c: R = CH3, (t)Bu; a = 0, 1), (Et)(N-3)(2)Ga (2a), and (Et)(N-3)(2)Ga . L(2b-d: L = thf, H(2)N(t)Bu, py, NC7H13) are quantitatively synthesized by salt metathesis from the chloro species (Cl)(2-a)(R)(a)Ga[(CH2)(3)NMe(2)](1-a) (a = 0, 1) or EtGaCl(2) and sodium azide. The preferential ammonolysis of Ga-N-3 bonds for [Et(2)Ga(N-3)](3) (4) and 1 and 2 is demonstrated; e.g. the dimer Et(2)Ga(mu-NH2)(mu-N-3)GaEt(2) (3) was obtained. The characterization of these compounds by means of elemental analysis, H-1-, C-13-, N-14-, and N-15-NMR, MS, and infrared nu(N-3) data is reported. The dynamics of the intramolecular Ga-N donor-acceptor bonded heterocycle and the azide group is discussed on the basis of variable-temperature NMR data. The barrier of activation of the bimolecular azide exchange process for (N-3)(2)Ga[(CH2)(3)NMe(2)] (1c) amounts about 50 kJ . mol(-1). The role of ammonia as reactive carrier gas for low-pressure metal organic chemical vapor deposition (MOCVD) of GaN with 1c as precursor is discussed.
    DOI:
    10.1021/om950926t
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