Dianthra[2,3-<i>b</i>:2′,3′-<i>f</i>]thieno[3,2-<i>b</i>]thiophene (DATT): Synthesis, Characterization, and FET Characteristics of New π-Extended Heteroarene with Eight Fused Aromatic Rings
作者:Kazuki Niimi、Shoji Shinamura、Itaru Osaka、Eigo Miyazaki、Kazuo Takimiya
DOI:10.1021/ja202377m
日期:2011.6.8
A novel highly π-extended heteroarene with eight fused aromatic rings, dianthra[2,3-b:2',3'-f]thieno[3,2-b]thiophene (DATT), was selectively synthesized via a newly developed synthetic strategy, fully characterized by means of single crystal X-ray structural analysis, and examined as an organic semiconductor in thin film transistors. Even with its highly extended acene-like π-system, DATT is a fairly
通过新开发的合成方法选择性合成了一种具有八个稠合芳环的新型高度 π 扩展的杂芳烃,二蒽 [2,3-b:2',3'-f] 噻吩并 [3,2-b] 噻吩 (DATT)策略,通过单晶 X 射线结构分析完全表征,并作为薄膜晶体管中的有机半导体进行检查。即使具有高度扩展的类并苯 π 系统,DATT 也是一种相当空气稳定的化合物,IP 为 5.1 eV。单晶X射线结构分析揭示了其平面分子结构和具有典型人字形堆积的片状层状结构。基于块状单晶结构的固态电子结构的理论计算表明,DATT 在 HOMOs (t(HOMO)) 之间提供了与 dinaphtho[2,3-b:2',3' 几乎相当的分子间轨道耦合 -f] 噻吩并 [3,2-b] 噻吩 (DNTT),这意味着其作为有机场效应晶体管的有机半导体具有良好的潜力。事实上,高达 3.0 cm(2) V(-1) s(-1) 的场效应迁移率是通过基于 DATT 的蒸汽处理设备实现的,这与基于