A thin film transistor device includes a semiconductor layer (22). The semiconductor layer includes a compound comprising a chemical structure represented by:
wherein each R is independently selected from hydrogen, an optionally substituted hydrocarbon, and a hetero-containing group,
each Ar is independently selected from optionally substituted aryl and heteroaryl groups,
each M is an optional, conjugated moiety,
a represents a number that is at least 1,
b represents a number from 0 to 20, and
n represents a number that is at least 1.
一种薄膜晶体管装置包括一个半导体层(22)。半导体层包括由以下
化学结构表示的化合物:
其中每个 R 独立选自氢、任选取代的烃和含杂基团、
每个 Ar 独立地选自任选取代的芳基和杂芳基、
每个 M 是任选的共轭分子、
a 代表至少为 1 的数字、
b 代表 0 至 20 的数字,以及
n 代表至少为 1 的数字。