Synthesis of Multisubstituted Guanidines through Palladium-Catalyzed Insertion of Isonitriles
作者:Li Yang、Hai-Tao Tang、Pei-Xia Li、Xiu-Jin Meng、Ying-Ming Pan
DOI:10.1055/s-0037-1610981
日期:2018.10
A new method for the synthesis of multisubstituted guanidines through tandem intermolecular insertion of isonitriles with unactivated amides has been developed. In this study, isonitriles could be used not only as reaction materials but also as the source of amines.
Study of N -benzoyl-activation in the HgCl 2 -promoted guanylation reaction of thioureas. Synthesis and structural analysis of N -benzoyl-guanidines
作者:Silvio Cunha、Maı́sa B Costa、Hamilton B Napolitano、Carlito Lariucci、Ivo Vencato
DOI:10.1016/s0040-4020(00)01168-6
日期:2001.2
demonstrated that the benzoyl group is an activating group for thioureas in the HgCl2-guanylation reaction. Thus N-benzoyl-thioureas containing electronically neutral and even electron-withdrawing or electron-releasing substituents are converted into guanidines with reasonable yields. In addition, NMR and X-ray structural analyses were performed to understand the intra- and intermolecular features of the synthesized
Bismuth nitrate pentahydrate: a new and environmentally benign reagent for guanidylation of N-benzoylthioureas
作者:Silvio Cunha、Byanka R de Lima、Aparecido R de Souza
DOI:10.1016/s0040-4039(01)02067-6
日期:2002.1
The bismuth nitrate-mediated guanidylation of N-benzoylthioureas was studied. This salt proved to be an effective guanylating reagent and allowed the obtention of N-benzoyl-guanidines in good yields. The methodology described is a promising alternative to the use of toxic HgCl2 in the synthesis of polysubstituted guanidines.
ACTINIC RAY-SENSITIVE OR RADIATION-SENSITIVE RESIN COMPOSITION, RESIST FILM USING THE SAME, PATTERN FORMING METHOD, MANUFACTURING METHOD OF ELECTRONIC DEVICE, ELECTRONIC DEVICE AND RESIN
申请人:FUJIFILM Corporation
公开号:US20150132688A1
公开(公告)日:2015-05-14
There is provided an actinic ray-sensitive or radiation-sensitive resin composition comprising (P) a resin having (a) a repeating unit represented by the specific formula; a resist film formed using the actinic ray-sensitive or radiation-sensitive resin composition; a pattern forming method comprising (i) a step of forming a film by using the actinic ray-sensitive or radiation-sensitive resin composition, (ii) a step of exposing the film, and (iii) a step of developing the exposed film by using a developer to form a pattern; a method for manufacturing an electronic device, comprising the pattern forming method; and an electronic device manufactured by the manufacturing method of an electronic device.
PATTERN FORMING METHOD, COMPOSITION KIT AND RESIST FILM, AND METHOD FOR PRODUCING ELECTRONIC DEVICE USING THEM, AND ELECTRONIC DEVICE
申请人:FUJIFILM CORPORATION
公开号:US20160018734A1
公开(公告)日:2016-01-21
There is provided a pattern forming method comprising (a) a step of forming a film on a substrate using an electron beam-sensitive or extreme ultraviolet radiation-sensitive resin composition, (b) a step of forming a top coat layer on the film using a top coat composition containing a resin (T) containing at least any one of repeating units represented by formulae (I-1) to (I-5) shown below, (c) a step of exposing the film having the top coat layer using an electron beam or an extreme ultraviolet radiation, and (d) a step of developing the film having the top coat layer after the exposure to form a pattern.