4-t-butoxyphenyl.diphenylsulfonium trifluoromethanesulfonate | 157089-26-4

• 分子结构分类: 有机化合物 - 苯类化合物 - 苯酚醚
• 英文名称: 4-t-butoxyphenyl.diphenylsulfonium trifluoromethanesulfonate
• 英文别名: (p-tert-butoxyphenyl)diphenylsulfonium trifluoromethanesulfonate；[4-[(2-methylpropan-2-yl)oxy]phenyl]-diphenylsulfanium;trifluoromethanesulfonate
• CAS: 157089-26-4
• 化学式: CF₃O₃S*C₂₂H₂₃OS
• 分子量: 484.56
• InChiKey: HKKMPPDCCCBZHM-UHFFFAOYSA-M

计算性质

• 辛醇/水分配系数(LogP)：
  6.01
• 重原子数：
  32
• 可旋转键数：
  5
• 环数：
  3.0
• sp3杂化的碳原子比例：
  0.22
• 拓扑面积：
  75.8
• 氢给体数：
  0
• 氢受体数：
  7

反应信息

• 作为反应物：
  描述：

  4-t-butoxyphenyl.diphenylsulfonium trifluoromethanesulfonate 、 三氟甲磺酸 在 乙醚 、 crude product 作用下， 以 甲醇 为溶剂， 反应 6.0h， 生成 4-hydroxyphenyl.diphenylsulfonium trifluoromethanesulfonate
  参考文献：
  名称：

  Chemically amplified positive resist composition

  摘要：

  一种化学增感正性光阻组合物含有一种新型的三氟甲烷磺酸或对甲苯磺酸磺酸盐，其具有至少一个叔丁氧羰基甲氧基基团作为酸敏基团。该组合物对高能辐射，特别是KrF准分子激光具有高灵敏度，分辨率和等离子体蚀刻抗性，而所得到的光阻图案具有耐热性。

  公开号：

  US05679496A1

文献信息

• ANTIREFLECTIVE COMPOSITIONS WITH THERMAL ACID GENERATORS
  申请人：Rohm and Haas Electronic Materials Korea Ltd.

  公开号：US20190085173A1

  公开（公告）日：2019-03-21

  New methods and substrates are provided that include antireflective compositions that comprise one or more thermal acid generators.

  提供了包括一个或多个热酸发生剂的防反射组分的新方法和基板。
• MONOMERS, POLYMERS AND PHOTORESIST COMPOSITIONS
  申请人：Rohm and Haas Electronic Materials Korea Ltd.

  公开号：US20180059545A1

  公开（公告）日：2018-03-01

  In one preferred embodiment, polymers are provided that comprise a structure of the following Formula (I): Photoresists that comprises such polymers also are provided.

  在一个首选实施例中，提供了包含以下化学式（I）结构的聚合物： 还提供了包含这种聚合物的光刻胶。
• RESIST COMPOSITION, METHOD FOR FORMING RESIST PATTERN, POLYPHENOLIC COMPOUND FOR USE IN THE COMPOSITION, AND ALCOHOLIC COMPOUND THAT CAN BE DERIVED THEREFROM
  申请人：Mitsubishi Gas Chemical Company, Inc.

  公开号：US20160145231A1

  公开（公告）日：2016-05-26

  A resist composition containing a compound represented by the general formula (1) or (2), a method for forming a resist pattern using the composition, a polyphenolic compound for use in the composition, and an alcoholic compound that can be derived therefrom are described.

  描述了一种包含由通式（1）或（2）表示的化合物的光刻胶组合物，使用该组合物形成光刻胶图案的方法，用于该组合物的多酚化合物，以及可以由其衍生的醇化合物。
• COATING COMPOSITIONS SUITABLE FOR USE WITH AN OVERCOATED PHOTORESIST
  申请人：Amara John P.

  公开号：US20110003250A1

  公开（公告）日：2011-01-06

  In one aspect, organic coating compositions, particularly antireflective coating compositions, are provided that comprise that comprise a diene/dienophile reaction product. In another aspect, organic coating compositions, particularly antireflective coating compositions, are provided that comprise a component comprising a hydroxyl-naphthoic group, such as a 6-hydroxy-2-naphthoic group Preferred compositions of the invention are useful to reduce reflection of exposing radiation from a substrate back into an overcoated photoresist layer and/or function as a planarizing, conformal or via-fill layer.

  在一个方面，提供了有机涂层组合物，特别是抗反射涂层组合物，其包括二烯/二烯亲双反应产物。在另一个方面，提供了有机涂层组合物，特别是抗反射涂层组合物，其包括一个含有羟基-萘甲基团的组分，例如6-羟基-2-萘甲基团。本发明的优选组合物可用于减少曝光辐射从基板反射回覆盖的光刻胶层，并/或作为平坦化、整平或填孔层。
• COMPOUND, RESIN, MATERIAL FOR FORMING UNDERLAYER FILM FOR LITHOGRAPHY, UNDERLAYER FILM FOR LITHOGRAPHY, PATTERN FORMING METHOD, AND METHOD FOR PURIFYING THE COMPOUND OR RESIN
  申请人：Mitsubishi Gas Chemical Company, Inc.

  公开号：US20170073288A1

  公开（公告）日：2017-03-16

  The compound according to the present invention is represented by a specific formula. The compound according to the present invention has a structure according to the specific formula, and therefore can be applied to a wet process and is excellent in heat resistance and etching resistance. In addition, the compound according to the present invention has such a specific structure, and therefore has a high heat resistance, a relatively high carbon concentration, a relatively low oxygen concentration and also a high solvent solubility. Therefore, the compound according to the present invention can be used to form an underlayer film whose degradation is suppressed at high-temperature baking and which is also excellent in etching resistance to oxygen plasma etching or the like. Furthermore, the compound is also excellent in adhesiveness with a resist layer and therefore can form an excellent resist pattern.

  根据本发明，该化合物由特定的公式表示。根据本发明，该化合物具有特定公式的结构，因此可应用于湿法工艺，具有优异的耐热性和耐蚀性。此外，根据本发明，该化合物具有特定结构，因此具有高耐热性、相对较高的碳浓度、相对较低的氧浓度以及高溶剂溶解性。因此，根据本发明的化合物可用于形成在高温烘烤时降解受抑制且在氧等离子体蚀刻中具有优异耐蚀性的底层膜。此外，该化合物在与光阻层的粘附性方面也表现出色，因此可形成优异的光阻图案。