4-tert-butoxy-2,3-difluorostyrene | 342007-81-2

• 分子结构分类: 有机化合物 - 苯类化合物 - 苯酚醚
• 英文名称: 4-tert-butoxy-2,3-difluorostyrene
• 英文别名: 1-ethenyl-2,3-difluoro-4-[(2-methylpropan-2-yl)oxy]benzene
• CAS: 342007-81-2
• 化学式: C₁₂H₁₄F₂O
• 分子量: 212.239
• InChiKey: YHUKDCMUDZRALT-UHFFFAOYSA-N

计算性质

• 辛醇/水分配系数(LogP)：
  3.9
• 重原子数：
  15
• 可旋转键数：
  3
• 环数：
  1.0
• sp3杂化的碳原子比例：
  0.33
• 拓扑面积：
  9.2
• 氢给体数：
  0
• 氢受体数：
  3

反应信息

• 作为产物：
  描述：

  4-tert-butoxy-2,3-difluoro-1-iodobenzene 、 chloroethene,zinc 在 四(三苯基膦)钯 作用下， 以 四氢呋喃 为溶剂， 反应 0.5h， 以83%的产率得到4-tert-butoxy-2,3-difluorostyrene
  参考文献：
  名称：

  Styrene derivatives

  摘要：

  公式（1）的苯乙烯衍生物是新颖的，其中R1是氢，C1-20烷基，氟取代的C1-20烷基，氯或三氯甲基，R2是苯酚保护基，p，q和r是0≤p<5，0≤q<5，0

  公开号：

  US06369279B1

文献信息

• Acid-degradable resin compositions containing ketene-aldehyde copolymer
  申请人：Sudo Atsushi

  公开号：US20050130057A1

  公开（公告）日：2005-06-16

  It is intended to provide compositions to be used in resists and the like for forming fine patterns with a high sensitivity and a high resolution by increasing the difference in the solubilities between exposed parts and unexposed parts. Acid-degradable compositions contain a polymer having a repeating unit represented by the following general formula (I): wherein R 1 and R 2 independently represent hydrogen atom, halogen atom, C 1-20 hydrocarbon group, a heterocyclic group, a cyano group, a nitro group, C(═O)R 4 group, S(O) n R 4 group, P(═O)(R 4 ) 2 group or M(R 4 ) 3 group; R 3 represents C 1-20 hydrocarbon group or a heterocyclic group: R 4 represents C 1-20 hydrocarbonoxy group, C 1-20 hydrocarbon group, C 1-20 hydrocarbonthio group or mono- or di-C 1-20 hydrocarbonamino group; M represents a silicon, germanium, tin or lead atom; and n is 0, 1 or 2 , and an acid or a compound capable of generating an acid in response to an external stimulus.

  本发明旨在提供用于制备高灵敏度和高分辨率细微图案的抗蚀剂等组合物，通过增加曝光部分和未曝光部分之间的溶解度差异。可降解酸性组合物包含具有以下通式（I）所表示的重复单元的聚合物：其中，R1和R2独立地表示氢原子、卤素原子、C1-20碳氢基团、杂环基团、氰基团、硝基团、C（═O）R4基团、S（O）nR4基团、P（═O）（R4）2基团或M（R4）3基团；R3表示C1-20碳氢基团或杂环基团；R4表示C1-20碳氢氧基团、C1-20碳氢基团、C1-20碳氢硫基团或单烷基或二烷基氨基基团；M表示硅、锗、锡或铅原子；n为0、1或2，以及一种酸或能够响应外部刺激产生酸的化合物。
• Polymers, chemical amplification resist compositions and patterning process
  申请人：Shin-Etsu Chemical Co., Ltd.

  公开号：US06461790B1

  公开（公告）日：2002-10-08

  Polymers comprising fluorinated vinyl phenol units and having acid labile groups partially introduced are novel. Using such polymers, resist compositions featuring transparency to excimer laser and alkali solubility are obtained.

  包含氟化乙烯酚单元并部分引入酸敏基团的聚合物是新颖的。使用这种聚合物，可以获得具有准分子激光透明度和碱溶性的光刻胶组合物。
• ACID-DEGRADABLE RESIN COMPOSITIONS CONTAINING KETENE-ALDEHYDE COPOLYMER
  申请人：NIPPON SODA CO., LTD.

  公开号：EP1482361A1

  公开（公告）日：2004-12-01

  It is intended to provide compositions to be used in resists and the like for forming fine patterns with a high sensitivity and a high resolution by increasing the difference in the solubilities between exposed parts and unexposed parts. Acid-degradable compositions contain a polymer having a repeating unit represented by the following general formula (I): wherein R1 and R2 independently represent hydrogen atom, halogen atom, C1-20 hydrocarbon group, a heterocyclic group, a cyano group, a nitro group, C(=O)R4 group, S(O)nR4 group, P(=O)(R4)2 group or M(R4)3 group; R3 represents C1-20 hydrocarbon group or a heterocyclic group: R4 represents C1-20 hydrocarbonoxy group, C1-20 hydrocarbon group, C1-20 hydrocarbonthio group or mono- or di- C1-20 hydrocarbonamino group; M represents a silicon, germanium, tin or lead atom; and n is 0, 1 or 2, and an acid or a compound capable of generating an acid in response to an external stimulus.

  本发明旨在提供用于抗蚀剂等的组合物，通过增大暴露部分和未暴露部分之间的溶解度差异，形成具有高灵敏度和高分辨率的精细图案。可酸性降解组合物含有一种聚合物，其重复单元由以下通式 (I) 表示： 其中 R1 和 R2 分别代表氢原子、卤素原子、C1-20 烃基、杂环基、氰基、硝基、C(＝O)R4 基、S(O)nR4 基、P(＝O)(R4)2 基或 M(R4)3 基；R3 代表 C1-20 烃基或杂环基：R4代表C1-20烃氧基、C1-20烃基、C1-20烃硫基或单-或双-C1-20烃氨基；M代表硅、锗、锡或铅原子；n为0、1或2。
• Resin containing ketene-aldehyde copolymer
  申请人：NIPPON SODA CO., LTD.

  公开号：EP1720063B1

  公开（公告）日：2010-04-07
• PATTERN FORMING PROCESS AND SHRINK AGENT
  申请人：SHIN-ETSU CHEMICAL CO., LTD.

  公开号：US20160202612A1

  公开（公告）日：2016-07-14

  A negative pattern is formed by applying a resist composition onto a substrate, exposing the resist film, and developing the exposed resist film in an organic solvent developer. The process further involves coating the negative pattern with a shrink agent solution of a first polymer comprising recurring units capable of forming carboxyl, hydroxyl or lactone ring and a second polymer comprising recurring units capable of forming amino and fluorinated recurring units in an ester and/or ketone solvent, baking the coating, and removing the excessive shrink agent for thereby shrinking the size of spaces in the pattern.