N-butyl-12-sulfanyldodecanamide | 734490-50-7

• 分子结构分类: 有机化合物 - 脂质和类脂质分子 - 脂肪酰基
• 英文名称: N-butyl-12-sulfanyldodecanamide
• CAS: 734490-50-7
• 化学式: C₁₆H₃₃NOS
• 分子量: 287.51
• InChiKey: VVADTBLEIMUZLT-UHFFFAOYSA-N

计算性质

• 辛醇/水分配系数(LogP)：
  5.3
• 重原子数：
  19
• 可旋转键数：
  14
• 环数：
  0.0
• sp3杂化的碳原子比例：
  0.94
• 拓扑面积：
  30.1
• 氢给体数：
  2
• 氢受体数：
  2

反应信息

• 作为产物：
  描述：

  12-溴十二烷酸 在 草酰氯 、 水 、 三乙胺 、 sodium hydroxide 作用下， 以 四氢呋喃 、 乙醇 、 二氯甲烷 为溶剂， 反应 20.0h， 生成 N-butyl-12-sulfanyldodecanamide
  参考文献：
  名称：

  Replacing −CH₂CH₂– with −CONH– Does Not Significantly Change Rates of Charge Transport through Ag^TS-SAM//Ga₂O₃/EGaIn Junctions

  摘要：

  This paper describes physical-organic studies of charge transport by tunneling through self-assembled monolayers (SAMs), based on systematic variations of the structure of the molecules constituting the SAM. Replacing a -CH2CH2- group with a -CONH- group changes the dipole moment and polarizability of a portion of the molecule and has, in principle, the potential to change the rate of charge transport through the SAM. In practice, this substitution produces no significant change in the rate of charge transport across junctions of the structure Ag-TS-S(CH2)(m)X(CH2)(n)H//Ga2O3/EGaIn (TS = template stripped, X = -CH2CH2- or -CONH-, and EGaIn = eutectic alloy of gallium and indium). Incorporation of the amide group does, however, increase the yields of working (non-shorting) junctions (when compared to n-alkanethiolates of the same length). These results suggest that synthetic schemes that combine a thiol group on one end of a molecule with a group, R, to be tested, on the other (e.g., HS similar to CONH similar to R) using an amide-based coupling provide practical routes to molecules useful in studies of molecular electronics.

  DOI：

  10.1021/ja301778s

文献信息

• Neue schwefelhaltige Phospholipide, Verfahren zu deren Herstellung und diese Verbindungen enthaltende Arzneimittel
  申请人：BOEHRINGER MANNHEIM GMBH

  公开号：EP0050327B1

  公开（公告）日：1984-06-20
• Replacing −CH₂CH₂– with −CONH– Does Not Significantly Change Rates of Charge Transport through Ag^TS-SAM//Ga₂O₃/EGaIn Junctions
  作者：Martin M. Thuo、William F. Reus、Felice C. Simeone、Choongik Kim、Michael D. Schulz、Hyo Jae Yoon、George M. Whitesides

  DOI：10.1021/ja301778s

  日期：2012.7.4

  This paper describes physical-organic studies of charge transport by tunneling through self-assembled monolayers (SAMs), based on systematic variations of the structure of the molecules constituting the SAM. Replacing a -CH2CH2- group with a -CONH- group changes the dipole moment and polarizability of a portion of the molecule and has, in principle, the potential to change the rate of charge transport through the SAM. In practice, this substitution produces no significant change in the rate of charge transport across junctions of the structure Ag-TS-S(CH2)(m)X(CH2)(n)H//Ga2O3/EGaIn (TS = template stripped, X = -CH2CH2- or -CONH-, and EGaIn = eutectic alloy of gallium and indium). Incorporation of the amide group does, however, increase the yields of working (non-shorting) junctions (when compared to n-alkanethiolates of the same length). These results suggest that synthetic schemes that combine a thiol group on one end of a molecule with a group, R, to be tested, on the other (e.g., HS similar to CONH similar to R) using an amide-based coupling provide practical routes to molecules useful in studies of molecular electronics.