thioacetic acid S-(11-phenoxyundecyl) ester | 725735-37-5

• 分子结构分类: 有机化合物 - 苯类化合物 - 苯酚醚
• 英文名称: thioacetic acid S-(11-phenoxyundecyl) ester
• CAS: 725735-37-5
• 化学式: C₁₉H₃₀O₂S
• 分子量: 322.512
• InChiKey: CCCAPNQLFGGHNZ-UHFFFAOYSA-N

物化性质

• 沸点：
  425.6±18.0 °C(Predicted)
• 密度：
  0.999±0.06 g/cm3(Predicted)

计算性质

• 辛醇/水分配系数(LogP)：
  5.86
• 重原子数：
  22.0
• 可旋转键数：
  13.0
• 环数：
  1.0
• sp3杂化的碳原子比例：
  0.63
• 拓扑面积：
  26.3
• 氢给体数：
  0.0
• 氢受体数：
  3.0

反应信息

• 作为反应物：
  描述：

  thioacetic acid S-(11-phenoxyundecyl) ester 在 盐酸 作用下， 以 甲醇 为溶剂， 反应 3.0h， 以80%的产率得到11-phenoxyundecane-1-thiol
  参考文献：
  名称：

  芳烃封端的自组装单层中的偶极诱导结构：通过近边缘X射线吸收精细结构光谱学进行的研究。

  摘要：

  通过近边缘X射线吸收精细结构光谱学（NEXAFS）研究了在表面上呈现芳环的自组装单分子层的结构。芳环中不对称位置的氟取代用于在单层表面上生成偶极子层。我们发现，基于最低的C 1s到pi *跃迁的极化相关性，氟取代的芳族环比未取代的芳族环更有序两倍，这与从与碳原子相连的苯基碳的跃迁有关。该结果与由于氟原子的取代引起的芳族基团之间的偶极-偶极相互作用和四极相互作用的影响是一致的。

  DOI：

  10.1063/1.1737303
• 作为产物：
  描述：

  potassium phenolate 在 2-(2-cyanopropan-2-yldiazenyl)-2-methylpropanenitrile 作用下， 以 氯仿 、 N,N-二甲基甲酰胺 为溶剂， 反应 27.0h， 生成 thioacetic acid S-(11-phenoxyundecyl) ester
  参考文献：
  名称：

  Preparation of High Quality Electrical Insulator Self-Assembled Monolayers on Gold. Experimental Investigation of the Conduction Mechanism through Organic Thin Films

  摘要：

  Self-assembled monolayers (SAMS) form highly ordered, stable dielectrics on conductive surfaces. Being able to attach larger-area contacts in a MIM (metal-insulator-metal) diode, their electrical properties can be determined. In this paper, the electrical conduction through thiolate SAMS of different alkyl chain lengths formed on gold surfaces were studied and discussed. The influence of the headgroup with respect to the surface quality and prevention of short circuits is investigated. Phenoxy terminated alkanethiols were found to form high quality SAMS with perfect insulating properties. Synthesis of the required terminally substituted long chain thiols have been developed. The I(V) characteristics of MIM structures formed with these SAMS are measured and simulated according to theoretical tunneling models for electrical conductivity through thin organic layers. SAM based electronic devices will become especially important for future nanoscale applications, where they can serve as insulators, gate dielectric of FETs, resistors, and capacitor structures.

  DOI：

  10.1021/ja0548992