6,6'-dihydroxyspirobiindane | 32747-15-2

• 分子结构分类: 有机化合物 - 苯类化合物 - 茚满类
• 英文名称: 6,6'-dihydroxyspirobiindane
• 英文别名: 3,3'-spirobi[1,2-dihydroindene]-5,5'-diol
• CAS: 32747-15-2；105480-69-1
• 化学式: C₁₇H₁₆O₂
• 分子量: 252.313
• InChiKey: WYZQWDFFACJHDM-UHFFFAOYSA-N

物化性质

• 沸点：
  462.3±45.0 °C(Predicted)
• 密度：
  1.34±0.1 g/cm3(Predicted)

计算性质

• 辛醇/水分配系数(LogP)：
  4.1
• 重原子数：
  19
• 可旋转键数：
  0
• 环数：
  4.0
• sp3杂化的碳原子比例：
  0.29
• 拓扑面积：
  40.5
• 氢给体数：
  2
• 氢受体数：
  2

反应信息

• 作为反应物：
  描述：

  6,6'-dihydroxyspirobiindane 、 对氰基苯甲酰氯 在 4-二甲氨基吡啶 、 三乙胺 作用下， 以 乙腈 为溶剂， 反应 0.75h， 以90%的产率得到
  参考文献：
  名称：

  [EN] LIQUID-CRYSTAL COMPOSITIONS COMPRISING CHIRAL COMPOUNDS
  [FR] COMPOSITIONS A CRISTAUX LIQUIDES COMPRENANT DES COMPOSES CHIRAUX

  摘要：

  本发明涉及一类作为手性掺杂剂有用的化合物，这些化合物在液晶制剂中可用于两种对映异构体形式。这种制剂在显示器和其他各种产品中具有优势。

  公开号：

  WO2005061425A1
• 作为产物：
  描述：

  6,6'-dimethoxy-1,1'-spirobiindane 在 三溴化硼 作用下， 以 二氯甲烷 为溶剂， 反应 1.0h， 以100%的产率得到6,6'-dihydroxyspirobiindane
  参考文献：
  名称：

  [EN] LIQUID-CRYSTAL COMPOSITIONS COMPRISING CHIRAL COMPOUNDS
  [FR] COMPOSITIONS A CRISTAUX LIQUIDES COMPRENANT DES COMPOSES CHIRAUX

  摘要：

  本发明涉及一类作为手性掺杂剂有用的化合物，这些化合物在液晶制剂中可用于两种对映异构体形式。这种制剂在显示器和其他各种产品中具有优势。

  公开号：

  WO2005061425A1

文献信息

• MATERIAL FOR FORMING ORGANIC FILM, METHOD FOR FORMING ORGANIC FILM, PATTERNING PROCESS, AND COMPOUND
  申请人：SHIN-ETSU CHEMICAL CO., LTD.

  公开号：US20210286266A1

  公开（公告）日：2021-09-16

  The present invention is a material for forming an organic film, including: a compound shown by the following general formula (1); and an organic solvent, where in the general formula (1), X represents an organic group with a valency of “n” having 2 to 50 carbon atoms or an oxygen atom, “n” represents an integer of 1 to 10 , and R 1 independently represents any of the following general formulae (2), where in the general formulae (2), broken lines represent attachment points to X, and Q 1 represents a monovalent organic group containing a carbonyl group, at least a part of which is a group shown by the following general formulae (3), where in the general formulae (3), broken lines represent attachment points, X 1 represents a single bond or a divalent organic group having 1 to 20 carbon atoms optionally having a substituent when the organic group has an aromatic ring, R 2 represents a hydrogen atom, a methyl group, an ethyl group, or a phenyl group, and ** represents an attachment point. An object of the present invention is to provide a material for forming an organic film for forming an organic film having dry etching resistance, and also having high filling and planarizing properties and adhesion to a substrate.

  本发明是一种用于形成有机薄膜的材料，包括：由以下通用式（1）所示的化合物；和有机溶剂，在通用式（1）中，X代表具有2至50个碳原子或一个氧原子的价为“n”的有机基团，“n”表示1到10的整数，R1独立地表示以下通用式（2）中的任何一种，其中在通用式（2）中，虚线表示连接点到X，Q1表示含有羰基的一价有机基团，其中至少部分是以下通用式（3）所示的基团，其中在通用式（3）中，虚线表示连接点，X1表示单键或具有1到20个碳原子的二价有机基团，在有机基团具有芳香环时可选地具有取代基，R2表示氢原子、甲基基团、乙基基团或苯基团，**表示连接点。本发明的目的是提供一种用于形成具有干法刻蚀抗性的有机薄膜的材料，同时具有高填充和平整化性能以及对基底的粘附性。
• Resist lower-layer composition containing thermal acid generator, resist lower layer film-formed substrate, and patterning process
  申请人：Ohsawa Youichi

  公开号：US20100119970A1

  公开（公告）日：2010-05-13

  There is disclosed a resist lower-layer composition configured to be used by a multi-layer resist method used in lithography to form a layer lower than a photoresist layer acting as a resist upper layer film, wherein the resist lower-layer composition becomes insoluble or poorly-soluble in an alkaline developer after formation of the lower layer, and wherein the resist lower-layer composition comprises, at least, a thermal acid generator for generating an acid represented by the general formula (1) by heating at a temperature of 100° C. or higher. RCOO—CH 2 CF 2 SO 3 − H + (1) There can be provided a resist lower-layer composition in a multi-layer resist method (particularly, a two-layer resist method and a three-layer resist method), which composition is used to form a layer lower than a photoresist layer acting as a resist upper layer film, which composition becomes insoluble or poorly-soluble in an alkaline developer after formation of the lower layer, and which composition is capable of forming a resist lower layer film, intermediate-layered film, and the like having a higher anti-poisoning effect and exhibiting a lower load to the environment.

  揭示了一种抗性下层组合物，配置为在光刻中使用的多层抗性方法中使用，用于形成低于作为抗性上层膜的光刻胶层的一层，其中抗性下层组合物在形成下层后变得不溶解或难溶解于碱性显影剂中，且抗性下层组合物至少包括用于通过在100°C或更高温度下加热生成由通式（1）表示的酸的热酸发生剂。 可以提供一种抗性下层组合物，用于多层抗性方法（特别是双层抗性方法和三层抗性方法），该组合物用于形成低于作为抗性上层膜的光刻胶层的一层，该组合物在形成下层后变得不溶解或难溶解于碱性显影剂中，并且该组合物能够形成具有更高抗毒性效果并表现出对环境负荷较低的抗性下层膜、中间层膜等。
• COMPOUND FOR FORMING ORGANIC FILM, COMPOSITION FOR FORMING ORGANIC FILM, METHOD FOR FORMING ORGANIC FILM, AND PATTERNING PROCESS
  申请人：SHIN-ETSU CHEMICAL CO., LTD.

  公开号：US20170184968A1

  公开（公告）日：2017-06-29

  A compound for forming an organic film shown by the formula (1A), R—(—X) m1 (1A) wherein R represents a single bond or an organic group having 1 to 50 carbon atoms; X represents a group shown by formula (1B); and ml represents an integer satisfying 2≦m1≦10, wherein X 2 represents a divalent organic group having 1 to 10 carbon atoms; n1 represents 0 or 1; n2 represents 1 or 2; X 3 represents a group shown by the formula (1C); and n5 represents 0, 1, or 2, wherein R 10 represents a hydrogen atom or a saturated or unsaturated hydrocarbon group having 1 to 10 carbon atoms, wherein a hydrogen atom of the benzene ring in formula (1C) may be substituted with a methyl group or methoxy group. This compound for forming an organic film can provide organic film composition having good dry etching resistance, heat resistance to 400° C. or higher, high filling and planarizing properties.

  一种用于形成有机薄膜的化合物，其化学式为(1A)，R—(—X)m1(1A)，其中R代表一个单键或具有1至50个碳原子的有机基团；X代表化学式(1B)所示的基团；m1代表满足2≦m1≦10的整数，其中X2代表具有1至10个碳原子的二价有机基团；n1代表0或1；n2代表1或2；X3代表化学式(1C)所示的基团；n5代表0、1或2，其中R10代表氢原子或具有1至10个碳原子的饱和或不饱和碳氢基团，化学式(1C)中苯环的氢原子可能被甲基基团或甲氧基取代。这种用于形成有机薄膜的化合物可以提供具有良好干法刻蚀抗性、耐高温至400°C或更高、高填充和平整化性能的有机薄膜组合物。
• RESIST UNDERLAYER FILM COMPOSITION, PATTERNING PROCESS, AND METHOD FOR FORMING RESIST UNDERLAYER FILM
  申请人：SHIN-ETSU CHEMICAL CO., LTD.

  公开号：US20180284615A1

  公开（公告）日：2018-10-04

  Provided is a resist underlayer film composition which is excellent in resistance to a basic hydrogen peroxide aqueous solution, in gap-filling and planarization characteristics, and in dry etching characteristic, wherein the resist underlayer film composition is used for a multilayer resist method, comprising: (A1) a polymer (1A) comprising one, or two or more, of a repeating unit represented by following general formula (1); (A2) one, or two or more, of a polyphenol compound having a formula weight of 2,000 or less and not having a 3,4-dihydroxy phenyl group; and (B) an organic solvent.

  提供了一种抗碱性过氧化氢水溶液、填孔和平坦化特性以及干法蚀刻特性优异的抗蚀底层膜组合物，该抗蚀底层膜组合物用于多层光刻方法，包括：（A1）聚合物（1A），其包括由以下通式（1）表示的重复单元中的一个或两个或多个；（A2）一种或两种或多种分子量不超过2000且不具有3,4-二羟基苯基的多酚化合物；和（B）有机溶剂。
• RESIST UNDERLAYER FILM COMPOSTION, PATTERNING PROCESS, AND COMPOUND
  申请人：SHIN-ETSU CHEMICAL CO., LTD.

  公开号：US20170018436A1

  公开（公告）日：2017-01-19

  The present invention provides a resist underlayer film composition for lithography, containing a compound having an indenofluorene structure. This resist underlayer film composition is excellent in filling property, generates little outgas, and has high heat resistance.

  本发明提供了一种用于光刻的抗蚀底层膜组合物，包含具有茚并芴结构的化合物。这种抗蚀底层膜组合物具有优异的填充性能，产生少量气体释放，并具有高耐热性。