An object of the present invention is to provide a treatment liquid for patterning a resist film and a pattern forming method, each of which can simultaneously suppress the occurrence of pattern collapse in a resist L/S pattern and the occurrence of omission failure in a resist C/H pattern.
The treatment liquid of the present invention is a treatment liquid for patterning a resist film, which is used for subjecting a resist film obtained from an actinic ray-sensitive or radiation-sensitive resin composition to at least one of development or washing, and contains an organic solvent, in which the treatment liquid contains a first organic solvent having an SP value of 16.3 MPa1/2 or less and a second organic solvent having an SP value of 17.1 MPa1/2 or more.
本发明的目的是提供一种用于抗蚀剂薄膜图案化的处理液和一种图案形成方法,每种处理液和方法都能同时抑制抗蚀剂 L/S 图案崩溃和抗蚀剂 C/H 图案遗漏故障的发生。
本发明的处理液是一种用于抗蚀剂薄膜图案化的处理液,它用于将从对放 射线敏感或对辐射敏感的
树脂组合物中获得的抗蚀剂薄膜进行显影或洗涤中的 至少一种处理,并含有一种有机溶剂,其中处理液含有
SP 值为 16.3 MPa1/2 或以下 的第一种有机溶剂和
SP 值为 17.1 MPa1/2 或以上的第二种有机溶剂。