A method of forming a resist pattern includes: a step of forming a resist film using a positive resist composition containing a solvent and a polymer including monomer units represented by the following formulae (I) and (II), respectively; an exposure step; a development step; and a step of rinsing the developed resist film using a rinsing liquid having a surface tension of 20.0 mN/m or less. In formula (I), R1 is an organic group including 3 to 7 fluorine atoms. In formula (II), R2 is a hydrogen atom, a fluorine atom, or an unsubstituted or fluorine atom-substituted alkyl group, R3 is a hydrogen atom or an unsubstituted or fluorine atom-substituted alkyl group, p and q are each an integer of 0 to 5, and p+q=5.
一种形成抗蚀剂图案的方法包括:使用正抗蚀剂组合物形成抗蚀剂薄膜的步骤,该组合物含有溶剂和聚合物,聚合物包括分别由下式(I)和(II)表示的单体单元;曝光步骤;显影步骤;以及使用表面张力为 20.0 mN/m 或更小的漂洗液漂洗显影后的抗蚀剂薄膜的步骤。在式 (I) 中,R1 是包括 3 至 7 个
氟原子的有机基团。在式 (II) 中,R2 是氢原子、
氟原子或未取代或
氟原子取代的烷基,R3 是氢原子或未取代或
氟原子取代的烷基,p 和 q 分别是 0 至 5 的整数,且 p+q=5 。