acetaldehyde-(tert-butyl-phenyl-acetal) | 106165-17-7

• 分子结构分类: 有机化合物 - 苯类化合物 - 苯酚醚
• 英文名称: acetaldehyde-(tert-butyl-phenyl-acetal)
• 英文别名: 1-[(2-Methylpropan-2-yl)oxy]ethoxybenzene
• CAS: 106165-17-7
• 化学式: C₁₂H₁₈O₂
• 分子量: 194.274
• InChiKey: QEZZDLPVPLQYJZ-UHFFFAOYSA-N

物化性质

• 沸点：
  53-55 °C(Press: 5 Torr)
• 密度：
  0.9560 g/cm3

计算性质

• 辛醇/水分配系数(LogP)：
  3.3
• 重原子数：
  14
• 可旋转键数：
  4
• 环数：
  1.0
• sp3杂化的碳原子比例：
  0.5
• 拓扑面积：
  18.5
• 氢给体数：
  0
• 氢受体数：
  2

反应信息

• 作为反应物：
  描述：

  acetaldehyde-(tert-butyl-phenyl-acetal) 生成 叔丁基乙烯基醚
  参考文献：
  名称：

  Schostakowskii et al., Izvestiya Akademii Nauk SSSR, Seriya Khimicheskaya, 1952, p. 1099,1102; engl. Ausg. S. 959, 960

  摘要：

  DOI：
• 作为产物：
  描述：

  苯基乙烯醚 、 叔丁醇 在 三氯化铁 作用下， 生成 acetaldehyde-(tert-butyl-phenyl-acetal)
  参考文献：
  名称：

  Michant'ew et al., 1959, vol. 57, p. 177,178, 181

  摘要：

  DOI：

文献信息

• Schostakowskii et al., Doklady Akademii Nauk SSSR, 1954, vol. 94, p. 261,263
  作者：Schostakowskii et al.

  DOI：——

  日期：——
• COMPOSITION FOR FORMING RESIST UNDERLAYER FILM AND PATTERNING PROCESS USING THE SAME
  申请人：OGIHARA Tsutomu

  公开号：US20130005150A1

  公开（公告）日：2013-01-03

  The invention provides a composition for forming a silicon-containing resist underlayer film comprising: (A) a silicon-containing compound obtained by a hydrolysis-condensation reaction of a mixture containing, at least, one or more hydrolysable silicon compound shown by the following general formula (1) and one or more hydrolysable compound shown by the following general formula (2), and (B) a silicon-containing compound obtained by a hydrolysis-condensation reaction of a mixture containing, at least, one or more hydrolysable silicon compound shown by the following general formula (3) and one or more hydrolysable silicon compound shown by the following general formula (4). There can be provided a composition for forming a resist underlayer film applicable not only to a resist pattern obtained in a negative development but also to a resist pattern obtained in a conventional positive development, and a patterning process using this composition. R 1 m1 R 2 m2 R 3 m3 Si(OR) (4-m1-m2-m3) (1) U(OR 4 ) m4 (OR 5 ) m5 (2) R 6 m6 R 7 m7 R 8 m8 Si(OR 9 ) (4-m6-m7-m8) (3) Si(OR 10 ) 4 (4)
• US9624356B2
  申请人：——

  公开号：US9624356B2

  公开（公告）日：2017-04-18
• Schostakowskii et al., Izvestiya Akademii Nauk SSSR, Seriya Khimicheskaya, 1952, p. 1099,1102; engl. Ausg. S. 959, 960
  作者：Schostakowskii et al.

  DOI：——

  日期：——
• Michant'ew et al., 1959, vol. 57, p. 177,178, 181
  作者：Michant'ew et al.

  DOI：——

  日期：——