ALLYLOXY DERIVATIVE, RESIST UNDERLAYER FORMING COMPOSITION USING THE SAME, AND METHOD OF MANUFACTURING RESIST UNDERLAYER AND SEMICONDUCTOR DEVICE USING THE SAME
申请人:Merck Patent GmbH
公开号:US20210181636A1
公开(公告)日:2021-06-17
The present invention provides a resist underlayer forming composition, which is well in heat resistance and gap filling. Further, the present invention provides methods of manufacturing a resist underlayer and semiconductor device using it. [Means for Solution] A composition comprising a allyloxy derivative having a specific group and a solvent, and methods of manufacturing a resist underlayer and semiconductor device using it.
Provided is a polymer electrolyte membrane that is formed of a fluorine free material, is soft and hardly cracks, and is excellent in hot water resistance. The polymer electrolyte membrane is obtained by crosslinking a block copolymer (Z) containing a polymer block (A) containing a structural unit derived from an aromatic vinyl compound and having an ion-conducting group; and an amorphous polymer block (B) containing a structural unit derived from an unsaturated aliphatic hydrocarbon and free of any ion-conducting group, the block copolymer (Z) being crosslinked with a crosslinking agent (X) having, in a molecule thereof, two or more aromatic rings of which one or more hydrogen atoms are substituted with hydroxy groups.
Allyloxy derivative, resist underlayer forming composition using the same, and method of manufacturing resist underlayer and semiconductor device using the same
申请人:Merck Patent GmbH
公开号:US11366389B2
公开(公告)日:2022-06-21
The present invention provides a resist underlayer forming composition, which is well in heat resistance and gap filling. Further, the present invention provides methods of manufacturing a resist underlayer and semiconductor device using it. [Means for Solution] A composition comprising a allyloxy derivative having a specific group and a solvent, and methods of manufacturing a resist underlayer and semiconductor device using it.