Trifluoro-methanesulfonatediphenyl-(4-trifluoromethyl-phenyl)-sulfonium; | 116808-66-3

• 分子结构分类: 有机化合物 - 苯类化合物 - 苯和取代衍生物
• 英文名称: Trifluoro-methanesulfonatediphenyl-(4-trifluoromethyl-phenyl)-sulfonium
• 英文别名: Diphenyl-[4-(trifluoromethyl)phenyl]sulfanium;trifluoromethanesulfonate
• CAS: 116808-66-3
• 化学式: CF₃O₃S*C₁₉H₁₄F₃S
• 分子量: 480.452
• InChiKey: JPYMGISSEHHWTG-UHFFFAOYSA-M

计算性质

• 辛醇/水分配系数(LogP)：
  5.85
• 重原子数：
  31
• 可旋转键数：
  3
• 环数：
  3.0
• sp3杂化的碳原子比例：
  0.1
• 拓扑面积：
  66.6
• 氢给体数：
  0
• 氢受体数：
  9

反应信息

• 作为产物：
  描述：

  三氟甲磺酸三甲基硅酯 、 二苯基亚砜 、 4-三氟甲基苯基溴化镁 以 四氢呋喃 、 二氯甲烷 为溶剂， 以28%的产率得到Trifluoro-methanesulfonatediphenyl-(4-trifluoromethyl-phenyl)-sulfonium;
  参考文献：
  名称：

  Deoxygenation of sulfoxides promoted by electrophilic silicon reagents: preparation of aryl-substituted sulfonium salts

  摘要：

  DOI：

  10.1021/jo00258a041

文献信息

• Silsesquioxane resin, positive resist composition,layered product including resist and method of forming resist pattern
  申请人：Nakamura Tsuyoshi

  公开号：US20060222866A1

  公开（公告）日：2006-10-05

  A silsesquioxane resin, a positive resist composition, a resist laminate, and a method of forming a resist pattern that are capable of suppressing a degas phenomenon are provided, and a silicon-containing resist composition and a method of forming a resist pattern that are ideally suited to immersion lithography are also provided. The silsesquioxane resin includes structural units represented by the general shown below [wherein, R 1 and R 2 each represent, independently, a straight chain, branched, or cyclic saturated aliphatic hydrocarbon group; R 3 represents an acid dissociable, dissolution inhibiting group containing a hydrocarbon group that includes an aliphatic monocyclic or polycyclic group; R 4 represents a hydrogen atom, or a straight chain, branched, or cyclic alkyl group; X represents an alkyl group of 1 to 8 carbon atoms in which at least one hydrogen atom has been substituted with a fluorine atom; and m represents an integer from 1 to 3].

  提供了一种能够抑制脱气现象的八面体硅氧烷树脂、正性光刻胶组合物、光刻胶层压物和形成光刻图案的方法，以及一种非常适合浸没式光刻技术的含硅光刻胶组合物和形成光刻图案的方法。八面体硅氧烷树脂包括以下通式所示的结构单元[其中，R1和R2各自独立地表示直链、支链或环状饱和脂肪烃基；R3表示含有脱离酸、抑制溶解的基团的碳氢基团，该碳氢基团包括一个脂环或多环基团；R4表示氢原子或直链、支链或环状烷基；X表示1至8个碳原子的烷基，其中至少有一个氢原子被氟原子取代；m表示从1到3的整数]。
• Process for producing triarylsulfonium salt
  申请人：Sumino Motoshige

  公开号：US20070083060A1

  公开（公告）日：2007-04-12

  [Subject] To provide a method for effectively producing a triarylsulfonium salt having a structure that only one aromatic ring of three aromatic rings on the cation portion thereof is different from the other two aromatic rings (hereinafter, abbreviated as a triarylsulfonium salt relating to the present invention) in a high yield without forming any byproduct. [Means for Solution Problems] The present invention relates to a method for producing a triarylsulfonium salt represented by the general formula [4]: wherein, two R 1 's represent each hydrogen atom, halogen atom, alkyl group, lower haloalkyl group, alkoxy group, acyl group, hydroxyl group, amino group, nitro group or cyano group; R represents an aryl group which may have a substituent selected from a halogen atom, an alkyl group, a lower haloalkyl group, an alkoxy group, an alkylthio group, a N-alkylcarbamoyl group and a carbamoyl group, and the above substituent is different from one represented by the above R 1 ; and A 1 represents a strong acid residue, comprising reacting a diaryl sulfoxide represented by the general formula [1]: wherein, R 1 represents the same as above, and an aryl Grignard reagent represented by the general formula [2]: RMgX   [2] wherein, X represents a halogen atom; R represents the same as above, in the presence of an activator with high affinity for oxygen of 3 to 7.5 equivalents relative to the above diaryl sulfoxide, and then reacting the resultant reaction mixture with a strong acid represented by the general formula [3]: HA 1 [3] wherein, A 1 represents the same as above, or a salt thereof.

  [主题] 提供一种有效地生产三芳基硫鎓盐的方法，其结构中阳离子部分的三个芳环中仅有一个芳环与另外两个芳环不同（以下简称与本发明有关的三芳基硫鎓盐），高产率地生产三芳基硫鎓盐而不产生任何副产物。 [解决问题的方法] 本发明涉及一种生产由一般式[4]表示的三芳基硫鎓盐的方法： 其中，两个R1分别代表氢原子、卤素原子、烷基、较低的卤代烷基、烷氧基、酰基、羟基、氨基、硝基或氰基；R代表芳基，该芳基可以具有从卤素原子、烷基、较低的卤代烷基、烷氧基、烷硫基、N-烷基氨甲酰基和氨甲酰基中选择的取代基，上述取代基与上述R1所代表的取代基不同；A1代表强酸残基。 该方法包括在高亲氧活化剂存在下，使一由一般式[1]表示的二芳基亚砜： 其中，R1代表与上述相同，以及由一般式[2]表示的芳基格氏试剂反应： RMgX   [2] 其中，X代表卤素原子；R代表与上述相同，然后将所得反应混合物与一由一般式[3]表示的强酸： HA1[3] 其中，A1代表与上述相同或其盐反应。
• SILSESQUIOXANE RESIN, POSITIVE RESIST COMPOSITION, RESIST LAMINATE, AND METHOD OF FORMING RESIST PATTERN
  申请人：Nakamura Tsuyoshi

  公开号：US20090068586A1

  公开（公告）日：2009-03-12

  A silsesquioxane resin, a positive resist composition, a resist laminate, and a method of forming a resist pattern that are capable of suppressing a degas phenomenon are provided, and a silicon-containing resist composition and a method of forming a resist pattern that are ideally suited to immersion lithography are also provided. The silsesquioxane resin includes structural units represented by the general shown below [wherein, R 1 and R 2 each represent, independently, a straight chain, branched, or cyclic saturated aliphatic hydrocarbon group; R 3 represents an acid dissociable, dissolution inhibiting group containing a hydrocarbon group that includes an aliphatic monocyclic or polycyclic group; R 4 represents a hydrogen atom, or a straight chain, branched, or cyclic alkyl group; X represents an alkyl group of 1 to 8 carbon atoms in which at least one hydrogen atom has been substituted with a fluorine atom; and m represents an integer from 1 to 3].

  提供了一种能够抑制气体析出现象的聚硅氧烷树脂、正向型光阻组合物、光阻层压物和形成光阻图案的方法，并提供了一种适用于浸没式光刻的含硅光阻组合物和形成光阻图案的方法。聚硅氧烷树脂包括由下式表示的结构单元[其中，R1和R2分别独立地表示直链、分支或环状饱和脂肪烃基；R3表示含有脂肪烃基的酸解离、抑制溶解的基团，包括脂环或多环基团；R4表示氢原子或直链、分支或环状烷基；X表示碳原子数为1至8的烷基，其中至少一个氢原子已被氟原子取代；m表示1至3的整数]。
• POSITIVE PHOTORESIST COMPOSITION AND METHOD FOR FORMING RESIST PATTERN
  申请人：TOKYO OHKA KOGYO CO., LTD.

  公开号：EP1619554A1

  公开（公告）日：2006-01-25

  The invention provides a positive photoresist composition which exhibits a high level of etching resistance and attains high resolution, and enables the formation of a fine pattern using an electron beam exposure step, as well as a method for forming a resist pattern that uses the positive photoresist composition. This positive photoresist composition for use with EB contains a resin component (A) that exhibits increased alkali solubility under the action of acid, an acid generator component (B) that generates acid on exposure, and an organic solvent (C), wherein the component (A) comprises a copolymer containing a first structural unit (a1) derived from hydroxystyrene and a second structural unit (a2) derived from a (meth)acrylate ester having an alcoholic hydroxyl group, and a portion of the hydroxyl groups of the structural units (a1) and the alcoholic hydroxyl groups of the structural units (a2) are protected with acid dissociable, dissolution inhibiting groups.

  本发明提供了一种正性光刻胶组合物，该组合物具有高抗蚀性和高分辨率，可使用电子束曝光步骤形成精细图案，还提供了一种使用该正性光刻胶组合物形成抗蚀图案的方法。这种与 EB 配合使用的正性光刻胶组合物包含在酸作用下碱溶解度增加的树脂成分（A）、在曝光时产生酸的酸发生器成分（B）和有机溶剂（C）、其中，组分（A）包含一种共聚物，该共聚物含有衍生自羟基苯乙烯的第一结构单元（a1）和衍生自具有醇羟基的（甲基）丙烯酸酯的第二结构单元（a2），并且结构单元（a1）的部分羟基和结构单元（a2）的醇羟基被可酸解离的溶解抑制基团所保护。
• POSITIVE RESIST COMPOSITION FOR IMMERSION EXPOSURE AND METHOD FOR FORMING RESIST PATTERN
  申请人：TOKYO OHKA KOGYO CO., LTD.

  公开号：EP1736827A1

  公开（公告）日：2006-12-27

  The present invention relates to a positive-type resist composition for liquid immersion lithography and a method of forming a resist pattern, in particular, a positive-type resist composition for liquid immersion lithography that exhibits superior liquid immersion resistance to water; and a method for forming a resist pattern by thereof. The positive-type resist composition for liquid immersion lithography according to the present invention includes a resin component (A) increasing alkali-solubility by acid action; and an acid generator generating acid by exposure; in which, the resin component (A) contains at least one acrylic ester constitutional unit (a1), and one (meth)acrylic ester constitutional unit (a2) having acid dissociable, dissolution inhibiting group, and the constitutional unit (a1) consists of a cyclic group bonded to the acrylic ester of the constitutional unit (a1), and a fluoro organic group bonded to the cyclic group.

  本发明涉及一种用于液浸平版印刷的正型抗蚀剂组合物和一种形成抗蚀剂图案的方法，特别是一种用于液浸平版印刷的正型抗蚀剂组合物，该组合物具有优异的耐水液浸性能；以及用其形成抗蚀剂图案的方法。根据本发明，用于液浸平版印刷的正型抗蚀剂组合物包括通过酸作用增加碱溶解性的树脂成分（A）；以及通过曝光产生酸的酸发生器；其中，树脂组分（A）包含至少一个丙烯酸酯组成单元（a1）和一个（甲基）丙烯酸酯组成单元（a2），丙烯酸酯组成单元（a2）具有可酸解的溶解抑制基团，组成单元（a1）由与组成单元（a1）的丙烯酸酯键合的环状基团和与环状基团键合的氟有机基团组成。