2-Methylpropyl 2,2-dimethylbutanoate | 20225-31-4

• 分子结构分类: 有机化合物 - 脂质和类脂质分子 - 脂肪酰基
• 英文名称: 2-Methylpropyl 2,2-dimethylbutanoate
• CAS: 20225-31-4
• 化学式: C₁₀H₂₀O₂
• mdl: MFCD09029499
• 分子量: 172.26
• InChiKey: RODWLRGSUINYPD-UHFFFAOYSA-N

计算性质

• 辛醇/水分配系数(LogP)：
  3.2
• 重原子数：
  12
• 可旋转键数：
  5
• 环数：
  0.0
• sp3杂化的碳原子比例：
  0.9
• 拓扑面积：
  26.3
• 氢给体数：
  0
• 氢受体数：
  2

文献信息

• Diaryldiazepine Prodrugs for the Treatment of Neurological and Psychological Disorders
  申请人：Remenar Julius F.

  公开号：US20110166128A1

  公开（公告）日：2011-07-07

  The present invention provides prodrug compounds of diaryldiazepine drug compounds.

  本发明提供了二苯并二氮杂苯类药物化合物的前药化合物。
• Prodrugs of Heteraromatic Compounds
  申请人：Alkermes Pharma Ireland Limited

  公开号：US20160009713A1

  公开（公告）日：2016-01-14

  The present invention relates to prodrugs of parent drug compounds containing heteroaromatic NH groups.

  本发明涉及含有杂芳基NH基团的母药化合物的前药。
• PHOTORESIST COMPOSITIONS AND METHODS
  申请人：Rohm and Haas Electronic Materials Korea Ltd.

  公开号：US20170090283A1

  公开（公告）日：2017-03-30

  New photoresists are provided that are useful in a variety of applications, including negative-tone development processes. Preferred resists comprise a first polymer comprising first units comprising a reactive nitrogen-containing moiety spaced from the polymer backbone, wherein the nitrogen-containing moiety produces a basic cleavage product during lithographic processing of the photoresist composition.

  提供了新的光阻剂，可用于各种应用，包括负调色剂开发过程。首选光阻剂包括第一聚合物，其中包括与聚合物骨架间隔的含有反应性氮基团的第一单元，其中氮基团在光刻处理光阻剂组合物期间产生碱性裂解产物。
• OVERCOAT COMPOSITIONS AND METHODS FOR PHOTOLITHOGRAPHY
  申请人：Rohm and Haas Electronic Materials Korea Ltd.

  公开号：US20170090287A1

  公开（公告）日：2017-03-30

  Topcoat compositions are provided that are suitably applied above a photoresist composition. Preferred topcoat compositions comprise a first polymer comprising first units comprising a reactive nitrogen-containing moiety spaced from the polymer backbone, wherein the nitrogen-containing moiety produces a basic cleavage product during lithographic processing of the photoresist composition.

  提供了适合应用在光阻剂组合物上方的面漆组合物。首选的面漆组合物包括第一聚合物，其中第一单元包括与聚合物主链相距的含反应性氮基团，氮基团在光刻加工光阻剂组合物时产生碱性裂解产物。
• PATTERN FORMING METHOD, ACTINIC RAY-SENSITIVE OR RADIATION-SENSITIVE RESIN COMPOSITION, RESIST FILM, MANUFACTURING METHOD OF ELECTRONIC DEVICE, ELECTRONIC DEVICE AND COMPOUND
  申请人：FUJIFILM CORPORATION

  公开号：US20160070167A1

  公开（公告）日：2016-03-10

  There is provided a pattern forming method comprising (i) a step of forming a film containing an actinic ray-sensitive or radiation-sensitive resin composition containing (A) a compound represented by the specific formula, (B) a compound different from the compound (A) and capable of generating an acid upon irradiation with an actinic ray or radiation, and (P) a resin that does not react with the acid generated from the compound (A) and is capable of decreasing the solubility for an organic solvent-containing developer by the action of the acid generated from the compound (B), (ii) a step of exposing the film, and (iii) a step of developing the exposed film by using an organic solvent-containing developer to form a negative pattern; the actinic ray-sensitive or radiation-sensitive resin composition above; a resist film using the composition.

  提供了一种图案形成方法，包括（i）形成一种薄膜，其中包含一种感光树脂组成物，该组成物包含（A）一种特定化学式代表的化合物，（B）一种不同于化合物（A）的化合物，在接受光辐射后能够产生酸，并且（P）一种树脂，该树脂不会与从化合物（A）产生的酸发生反应，并且能够通过来自化合物（B）产生的酸的作用降低有机溶剂含有的显影剂的溶解度，（ii）曝光薄膜，（iii）使用有机溶剂含有的显影剂对曝光后的薄膜进行显影，形成负图案；上述感光树脂组成物；使用该组成物的抗蚀膜。