申请人:KABUSHIKI KAISHA TOSHIBA
公开号:EP0231497A1
公开(公告)日:1987-08-12
The polysilanes and polysiloxanes of the present invention are polymers that contain silicon in the principal chain, and contain the side chains alkaline soluble groups such as phenol-based hydroxy group and carboxyl group.
One silicone resist material of the present invention comprises the polysilane or the polysiloxane in the above.
Another silicone resist material of the present invention contains the above polysilane or polysiloxane, and an appropriate photosensitive agent.
Still another silicone resist material of the present invention does not contain the above photosensitive agent, and in its stead, it contains a group that possesses photosensitive to ultraviolet rays or the like, via a siloxane bonding in the principal chain. As a substance with such photosensitivity, one may mention, for example, o-nitrobenzylsilyl groups that presents alkaline solubility when it is irradiated by ultraviolet rays.
Accordingly, the silicone resist materials of the present invention, especially the second and third silicone resist materials, are alkaline developable, and also possess a superior resistance to oxygen plasma. Therefore, they can be used as a top layer film in the two-layered resist system, making it possible to form very fine resist patterns, fast and with a minimum number of processing steps. Methods of manufacturing the polysilanes and polysiloxanes as well as of the resist materials are also disclosed.
本发明的聚硅烷和聚硅氧烷是主链含硅,侧链含碱溶性基团如酚基羟基和羧基的聚合物。
本发明的一种有机硅抗蚀剂材料包括上述的聚硅烷或聚硅氧烷。
本发明的另一种有机硅抗蚀剂材料包含上述聚硅烷或聚硅氧烷和适当的光敏剂。
本发明的另一种有机硅抗蚀剂材料不含上述光敏剂,而是通过主链中的硅氧烷键,含有对紫外线等具有光敏性的基团。例如,邻硝基苄基硅烷基团在紫外线照射下具有碱性溶解性,就是具有这种光敏性的物质。
因此,本发明的有机硅抗蚀剂材料,尤其是第二和第三种有机硅抗蚀剂材料,可在碱性条件下显影,而且还具有优异的抗氧等离子体性能。因此,它们可以用作双层抗蚀剂系统中的顶层薄膜,从而可以快速、以最少的加工步骤形成非常精细的抗蚀剂图案。此外,还公开了聚硅烷和聚硅氧烷以及抗蚀剂材料的制造方法。