Provided is a gas barrier film including a base, a first barrier layer containing silicon which is formed on at least one surface of the base, and a second barrier layer containing silicon oxynitride which is formed on the first barrier layer. The water vapor transmission rate (g/m2/day) at 40°C and 90% RH in a structure in which the first barrier layer is formed on the base is R1 and the water vapor transmission rate (g/m2/day) at 40°C and 90% RH in a structure in which the first barrier layer and the second barrier layer are laminated on the base is R2, and the ratio of the water vapor transmission rate R1 to the water vapor transmission rate R2 (R1/R2) is 80 or more and 5000 or less. Hereby, excellent barrier performance can be exhibited under a high-temperature and high-humidity environment.
本发明提供了一种气体阻隔薄膜,包括基底、在基底至少一个表面上形成的含
硅的第一阻隔层以及在第一阻隔层上形成的含氧化
硅的第二阻隔层。在第一阻隔层形成于基底上的结构中,40°C 和 90% 相对湿度条件下的
水蒸气透过率(克/平方米/天)为 R1,在第一阻隔层和第二阻隔层层叠于基底上的结构中,40°C 和 90% 相对湿度条件下的
水蒸气透过率(克/平方米/天)为 R2,
水蒸气透过率 R1 与
水蒸气透过率 R2 之比(R1/R2)为 80 或以上和 5000 或以下。因此,在高温高湿的环境下也能表现出优异的阻隔性能。