A positive photoresist composition includes (A) an alkali-soluble resin, in which part of phenolic hydroxyl groups is protected by an acid-decomposable group; (B) a quinonediazide ester; and (C) a compound which generates an acid upon irradiation of light with a wavelength of 365 nm. This positive photoresist composition can form a fine pattern of about 0.35 &mgr;m in the photolithographic process using i-ray (365 nm), is excellent in focal depth range properties in such an ultrafine region, and has a high sensitivity.
一种正性光刻胶组合物包括:(A)碱溶性
树脂,其中部分
酚羟基被可分解酸的基团所保护;(B)醌
噻嗪酯;以及(C)在波长为 365 纳米的光照射下产生酸的化合物。这种正性光刻胶组合物在使用 i-射线(365 纳米)的光刻工艺中可以形成约 0.35 &mgr;m 的精细图案,在这种超精细区域的焦深范围特性极佳,而且灵敏度高。