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malonic acid ethyl ester-propyl ester | 75968-85-3

中文名称
——
中文别名
——
英文名称
malonic acid ethyl ester-propyl ester
英文别名
Malonsaeure-aethylester-propylester;Ethyl propyl propanedioate;1-O-ethyl 3-O-propyl propanedioate
malonic acid ethyl ester-propyl ester化学式
CAS
75968-85-3
化学式
C8H14O4
mdl
——
分子量
174.197
InChiKey
OLGXVKQPZBFKBA-UHFFFAOYSA-N
BEILSTEIN
——
EINECS
——
  • 物化性质
  • 计算性质
  • ADMET
  • 安全信息
  • SDS
  • 制备方法与用途
  • 上下游信息
  • 反应信息
  • 文献信息
  • 表征谱图
  • 同类化合物
  • 相关功能分类
  • 相关结构分类

计算性质

  • 辛醇/水分配系数(LogP):
    1.5
  • 重原子数:
    12
  • 可旋转键数:
    7
  • 环数:
    0.0
  • sp3杂化的碳原子比例:
    0.75
  • 拓扑面积:
    52.6
  • 氢给体数:
    0
  • 氢受体数:
    4

反应信息

  • 作为反应物:
    描述:
    malonic acid ethyl ester-propyl esterpotassium phosphatepotassium carbonate 作用下, 以 乙腈 为溶剂, 反应 41.0h, 生成 ethyl 2-butyryl-4-phenylspiro[4.5]deca-3,6,9-triene-2-carboxylate
    参考文献:
    名称:
    Thermoneutral synthesis of spiro-1,4-cyclohexadienes by visible-light-driven dearomatization of benzylmalonates
    摘要:
    苯甲基丙二酸酯和乙炔的脱芳偶联不需要预激活或与高能试剂偶联,尽管该反应没有显著的热力学驱动力。
    DOI:
    10.1039/d1gc04686a
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文献信息

  • METHOD FOR PREPARING QUATERNARY PHOSPHONIUM SALTS
    申请人:Microvast Power Systems Co.,Ltd.
    公开号:US20150166587A1
    公开(公告)日:2015-06-18
    A two-step pathway for preparing high pure quaternary phosphonium salts is disclosed. In the first step, hydrogen phosphide (PH 3 ) or a higher phophine reacts with a protonic compound to produce a phosphonium salt, which then reacts with a carbonic acid diester to produce a quaternary phosphonium salt in the second step. On one hand, hydrogen phosphide (PH 3 ) and higher phophines, including primary phosphines, secondary phosphines, and tertiary phosphines, after neutralization with protonic compound, become sufficiently reactive and can be alkylated by carbonic acid diester to form quaternary phosphonium cations. On the other hand, as an anion-exchange procedure is completely avoided, the process not only gives quaternary phosphonium salts of high purity, but also gives people freedom to design the cation and the anion of a quaternary phosphonium salt synchronously by choosing a preferred phosphine and a protonic compound that can supply a desired anion.
    揭示了一种制备高纯度四元磷铵盐的两步途径。在第一步中,氢磷化物(PH3)或更高的磷化物与质子化合物发生反应,产生磷铵盐,然后在第二步中与碳酸二酯发生反应,产生四元磷铵盐。一方面,氢磷化物(PH3)和更高的磷化物,包括一次磷化物、二次磷化物和三次磷化物,在与质子化合物中和后变得足够活性,可以被碳酸二酯烷基化形成四元磷铵阳离子。另一方面,由于完全避免了阴离子交换程序,该过程不仅提供高纯度的四元磷铵盐,还使人们可以通过选择理想的磷化物和可以提供所需阴离子的质子化合物,同时设计四元磷铵盐的阳离子和阴离子。
  • PROCESS FOR PRODUCTION OF KETOMALONIC ACID COMPOUNDS OR HYDRATES THEREOF
    申请人:Tani Shinki
    公开号:US20120004443A1
    公开(公告)日:2012-01-05
    Disclosed is a process for the production of ketomalonic acid compounds or hydrates thereof by reacting a malonic acid compound with one or more chlorous acid compounds selected from among chlorous acid and chlorites and thus oxidizing the methylene group of the malonic acid compound. The process does not necessitate highly toxic reagents, lowly safe reagents, special reactants, special reaction equipment, expensive reagents, expensive catalysts, or transition metals such as noble metals, and permits the selection of mild reaction conditions and simple operation, thus enabling efficient and easy production of ketomalonic acid compounds such as ketomalonic diesters under simple and easy conditions suitable for industrialization.
    本公开了一种通过将丙二酸化合物与从次氯酸和次氯酸盐中选择的一个或多个次氯酸化合物反应,从而氧化丙二酸化合物的亚甲基基团,生产酮丙二酸化合物或其水合物的方法。该方法不需要高毒性试剂、低安全性试剂、特殊试剂、特殊反应设备、昂贵试剂、昂贵催化剂或贵金属等过渡金属,允许选择温和的反应条件和简单的操作,从而在适合工业化的简单易操作条件下,实现了高效和简便地生产酮丙二酸化合物,如酮丙二酸二酯。
  • PRODUCTION METHOD OF KETOMALONIC ACID COMPOUND
    申请人:IHARA CHEMICAL INDUSTRY CO., LTD.
    公开号:US20160194268A1
    公开(公告)日:2016-07-07
    Provided is a method for producing an industrially useful ketomalonic acid compound such as ketomalinic acid diesters, or a hydrate thereof, by a method more favorable from an economic and environmental standpoint and from a safety standpoint. The present invention relates to a method involving reacting a malonic acid compound represented by general formula (1) (in the formula, The each Rs indicate an alkyl group, a cycloalkyl group, etc.) with chlorine dioxide to produce a ketomalonic acid compound represented by the general formula (2) (in the formula, R has the same meaning as above), or a hydrate thereof.
    提供了一种生产工业上有用的酮丙二酸化合物,如酮丙二酸二酯或其水合物的方法,这种方法在经济和环境方面以及安全方面更有利。本发明涉及一种方法,涉及将由通式(1)表示的丙二酸化合物(在该式中,每个Rs表示烷基基团、环烷基基团等)与二氧化氯反应,以产生由通式(2)表示的酮丙二酸化合物(在该式中,R具有与上述相同的含义),或其水合物。
  • CHEMICAL MECHANICAL POLISHING AND WAFER CLEANING COMPOSITION COMPRISING AMIDOXIME COMPOUNDS AND ASSOCIATED METHOD FOR USE
    申请人:Lee Wai Mun
    公开号:US20090130849A1
    公开(公告)日:2009-05-21
    A composition and associated method for chemical mechanical planarization (or other polishing) is described. The composition contains an amidoxime compound and water. The composition may also contain an abrasive and a compound with oxidation and reduction potential. The composition is useful for attaining improved removal rates for metal, including copper, barrier material, and dielectric layer materials in metal CMP. The composition is particularly useful in conjunction with the associated method for metal CMP applications.
    本文描述了一种化学机械平整化(或其他抛光)的组合物及其相关方法。该组合物含有一种酰胺肟化合物和水。该组合物还可以含有磨料和具有氧化还原潜力的化合物。该组合物可用于在金属CMP中获得改进的金属去除速率,包括铜、屏障材料和金属CMP中的介电层材料。该组合物在金属CMP应用的相关方法中特别有用。
  • METHODS OF CLEANING SEMICONDUCTOR DEVICES AT THE BACK END OF LINE USING AMIDOXIME COMOSITIONS
    申请人:Lee Wai Mun
    公开号:US20100043823A1
    公开(公告)日:2010-02-25
    The present invention relates to aqueous compositions comprising amidoxime compounds and methods for cleaning plasma etch residue from semiconductor substrates including such dilute aqueous solutions. The compositions of the invention may optionally contain one or more other acid compounds, one or more basic compounds, and a fluoride-containing compound and additional components such as organic solvents, chelating agents, amines, and surfactants. The invention also relates to a method of removing residue from a substrate during integrated circuit fabrication.
    本发明涉及含有酰胺肟化合物的水性组合物及其清洗半导体衬底上等离子体刻蚀残留物的方法,包括这种稀释的水性溶液。本发明的组合物可以选择性地含有一种或多种其他酸性化合物、一种或多种碱性化合物、含氟化合物和其他成分,如有机溶剂、螯合剂、胺和表面活性剂。本发明还涉及一种在集成电路制造过程中从衬底上去除残留物的方法。
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