2-(Adamantane-1-carbonyloxy)-1,1,2-trifluoroethanesulfonic acid

• 分子结构分类: 有机化合物 - 有机酸及其衍生物 - 有机磺酸及其衍生物
• 英文名称: 2-(Adamantane-1-carbonyloxy)-1,1,2-trifluoroethanesulfonic acid
• 英文别名: 2-(adamantane-1-carbonyloxy)-1,1,2-trifluoroethanesulfonic acid
• 化学式: C₁₃H₁₇F₃O₅S
• 分子量: 342.33
• InChiKey: KAMOHHGQJHFLKG-UHFFFAOYSA-N

计算性质

• 辛醇/水分配系数(LogP)：
  2.9
• 重原子数：
  22
• 可旋转键数：
  5
• 环数：
  4.0
• sp3杂化的碳原子比例：
  0.92
• 拓扑面积：
  89
• 氢给体数：
  1
• 氢受体数：
  8

文献信息

• Pattern forming method, resist pattern, and process for producing electronic device
  申请人：FUJIFILM Corporation

  公开号：US10578968B2

  公开（公告）日：2020-03-03

  The present invention has an object to provide a pattern forming method capable of providing good DOF and EL, a resist pattern formed by the pattern forming method, and a method for manufacturing an electronic device, including the pattern forming method. The pattern forming method of the present invention includes a step a of coating an active-light-sensitive or radiation-sensitive resin composition onto a substrate to form a resist film, a step b of coating a composition for forming an upper layer film onto the resist film to form an upper layer film on the resist film, a step c of exposing the resist film having the upper layer film formed thereon, and a step d of developing the exposed resist film using a developer to form a pattern, in which the active-light-sensitive or radiation-sensitive resin composition contains a hydrophobic resin.

  本发明的目的是提供一种能够提供良好的DOF和EL的图案形成方法、一种由该图案形成方法形成的抗蚀剂图案，以及一种制造电子设备的方法，包括该图案形成方法。本发明的图案形成方法包括步骤 a：在基板上涂布活性光敏或辐射敏感树脂组合物以形成抗蚀剂薄膜；步骤 b：在抗蚀剂薄膜上涂布用于形成上层薄膜的组合物以在抗蚀剂薄膜上形成上层薄膜；步骤 c：曝光形成有上层薄膜的抗蚀剂薄膜；步骤 d：使用显影剂显影曝光的抗蚀剂薄膜以形成图案，其中活性光敏或辐射敏感树脂组合物包含疏水性树脂。
• METHOD OF FORMING PATTERN AND ACTINIC-RAY- OR RADIATION-SENSITIVE RESIN COMPOSITION FOR USE IN THE METHOD
  申请人：FUJIFILM Corporation

  公开号：US20150118621A1

  公开（公告）日：2015-04-30

  Provided is a method of forming a pattern, including (a) forming a film comprising an actinic-ray- or radiation-sensitive resin composition comprising a resin (P) containing a repeating unit (P1) with a cyclic carbonic acid ester structure and any of repeating units (P2) of general formula (P2-1) below, and a compound (B) that when exposed to actinic rays or radiation, generates an acid, (b) exposing the film to actinic rays or radiation, and (c) developing the exposed film with a developer comprising an organic solvent to thereby obtain a negative pattern.
• PATTERN FORMING METHOD, RESIST PATTERN, AND PROCESS FOR PRODUCING ELECTRONIC DEVICE
  申请人：FUJIFILM Corporation

  公开号：US20170199461A1

  公开（公告）日：2017-07-13

  The present invention has an object to provide a pattern forming method capable of providing good DOF and EL, a resist pattern formed by the pattern forming method, and a method for manufacturing an electronic device, including the pattern forming method. The pattern forming method of the present invention includes a step a of coating an active-light-sensitive or radiation-sensitive resin composition onto a substrate to form a resist film, a step b of coating a composition for forming an upper layer film onto the resist film to form an upper layer film on the resist film, a step c of exposing the resist film having the upper layer film formed thereon, and a step d of developing the exposed resist film using a developer to form a pattern, in which the active-light-sensitive or radiation-sensitive resin composition contains a hydrophobic resin.
• [EN] METHOD OF FORMING PATTERN AND ACTINIC-RAY- OR RADIATION-SENSITIVE RESIN COMPOSITION FOR USE IN THE METHOD<br/>[FR] PROCÉDÉ DE FORMATION DE MOTIF ET COMPOSITION DE RÉSINE SENSIBLE À UN RAYONNEMENT OU AUX RAYONS ACTINIQUES POUR UTILISATION DANS LE PROCÉDÉ
  申请人：FUJIFILM CORP

  公开号：WO2014007361A1

  公开（公告）日：2014-01-09

  Provided is a method of forming a pattern, including (a) forming a film comprising an actinic-ray- or radiation-sensitive resin composition comprising a resin (P) containing a repeating unit (P1) with a cyclic carbonic acid ester structure and any of repeating units (P2) of general formula (P2-1) below, and a compound (B) that when exposed to actinic rays or radiation, generates an acid, (b) exposing the film to actinic rays or radiation, and (c) developing the exposed film with a developer comprising an organic solvent to thereby obtain a negative pattern.