A light emitting device includes an anode, a cathode, a light emitting layer disposed between the anode and the cathode, and an encapsulating layer. The temperature TA (° C.) at which an annealing treatment is conducted after the formation of the encapsulating layer and the glass transition temperature TG (° C.) of the material having the lowest glass transition temperature out of all materials each contained in an amount of 1 wt % or more in the light emitting layer satisfy the following formula (1): TA