2-Hydroxy-4-oxo-4-(triphenyl-lambda4-sulfanyl)oxybutanoic acid

• 分子结构分类: 有机化合物 - 有机酸及其衍生物 - 羟基酸及其衍生物
• 英文名称: 2-Hydroxy-4-oxo-4-(triphenyl-lambda4-sulfanyl)oxybutanoic acid
• 英文别名: 2-hydroxy-4-oxo-4-(triphenyl-λ4-sulfanyl)oxybutanoic acid
• 化学式: C₂₂H₂₀O₅S
• 分子量: 396.5
• InChiKey: JEPAGMBAIGBQNU-UHFFFAOYSA-N

计算性质

• 辛醇/水分配系数(LogP)：
  4.5
• 重原子数：
  28
• 可旋转键数：
  8
• 环数：
  3.0
• sp3杂化的碳原子比例：
  0.09
• 拓扑面积：
  84.8
• 氢给体数：
  2
• 氢受体数：
  6

文献信息

• METHOD FOR FORMING PATTERN, AND POLYSILOXANE COMPOSITION
  申请人：JSR Corporation

  公开号：US20150048046A1

  公开（公告）日：2015-02-19

  A pattern-forming method in which processibility of a silicon-containing film in etching with a fluorine gas and resistance against etching with an oxygen gas can be together improved in a multilayer resist process to form a finer pattern. Provided is a pattern-forming method that includes the steps of (1) providing a silicon-containing film on the upper face side of a substrate to be processed using a polysiloxane composition; (2) forming a resist pattern on the silicon-containing film; (3) dry-etching the silicon-containing film using the resist pattern as a mask to form a silicon-containing pattern; and (4) dry-etching the substrate to be processed using the silicon-containing pattern as a mask to form a pattern, in which the polysiloxane composition includes (A) a polysiloxane containing a fluorine atom, and (B) a crosslinking accelerator.
• US9434609B2
  申请人：——

  公开号：US9434609B2

  公开（公告）日：2016-09-06