N,N,N'-trimethylpentanediamide | 125111-73-1

• 分子结构分类: 有机化合物 - 脂质和类脂质分子 - 脂肪酰基
• 英文名称: N,N,N'-trimethylpentanediamide
• 英文别名: N,N',N'-trimethylpentanediamide
• CAS: 125111-73-1
• 化学式: C₈H₁₆N₂O₂
• 分子量: 172.227
• InChiKey: KDILVLRKCUUJSY-UHFFFAOYSA-N

计算性质

• 辛醇/水分配系数(LogP)：
  -0.7
• 重原子数：
  12
• 可旋转键数：
  4
• 环数：
  0.0
• sp3杂化的碳原子比例：
  0.75
• 拓扑面积：
  49.4
• 氢给体数：
  1
• 氢受体数：
  2

反应信息

• 作为产物：
  描述：

  戊二酸酐 在 1-羟基苯并三唑 、 N,N'-二环己基碳二亚胺 作用下， 以 水 为溶剂， 反应 3.5h， 生成 N,N,N'-trimethylpentanediamide
  参考文献：
  名称：

  Conformation-directing effects of a single intramolecular amide-amide hydrogen bond: variable-temperature NMR and IR studies on a homologous diamide series

  摘要：

  We have studied intramolecular hydrogen bonding in a homologous series of diamides (compounds 1-6) in methylene chloride, 9:1 carbon tetrachloride/benzene, and acetonitrile. By correlating variable-temperature H-1 NMR and IR measurements, we have shown that the temperature dependence of the amide proton NMR chemical shift (DELTA-delta/DELTA-T) can provide qualitative (and in some cases quantitative) information on the thermodynamic relationship between the intramolecularly hydrogen bonded and non-hydrogen-bonded states of flexible molecules. Among the hydrogen-bonded ring sizes represented in the diamide series, the intramolecular interaction is particularly enthalpically favorable in the nine-membered hydrogen-bonded ring (compound 4). Variable-temperature IR and NMR data indicate that the internally hydrogen bonded state of diamide 4 is 1.4-1.6 kcal/mol more favorable enthalpically than the non-hydrogen-bonded state, in methylene chloride solution; the non-hydrogen-bonded state is 6.8-8.3 eu more favorable entropically in this solvent. In contrast, there appear to be much smaller enthalpy differences between the internally hydrogen bonded and non-hydrogen-bonded states of diamides 2 and 3. Our findings are important methodologically because the temperature dependences of amide proton chemical shifts are commonly used to elucidate peptide conformation in solution. Our results show that previous "rules" for the interpretation of such data are incomplete. In non-hydrogen-bonding solvents, small amide proton DELTA-delta/DELTA-T values have been taken to mean that the proton is either entirely free of hydrogen bonding or completely locked in an intramolecular hydrogen bond over the temperature range studied. We demonstrate that an amide proton can be equilibrating between intramolecularly hydrogen bonded and non-hydrogen-bonded states and still manifest a small chemical shift temperature dependence (implying that the hydrogen-bonded and non-hydrogen-bonded states are of similar enthalpy).

  DOI：

  10.1021/ja00004a016

文献信息

• Composition for film formation and insulating film
  申请人：JSR Corporation

  公开号：EP1122746A1

  公开（公告）日：2001-08-08

  A composition for film formation comprising a polymer having repeating structural units represented by the formula (1) , the structural unit having one or more alkyl groups therein, and an insulating film obtained by applying the composition for film formation to a substrate and heating the coating film.

  一种成膜用组合物，包含一种具有由式（1）表示的重复结构单元的聚合物，该结构单元中含有一个或多个烷基，以及一种通过将该成膜用组合物涂在基材上并加热涂膜而获得的绝缘膜。
• COMPOSITION FOR POROUS FILM FORMATION, POROUS FILM, PROCESS FOR PRODUCING THE SAME, INTERLAYER INSULATION FILM AND SEMICONDUCTOR DEVICE
  申请人：Panasonic Corporation

  公开号：EP1566417B1

  公开（公告）日：2010-03-24
• Composition for forming porous film, porous film and method for forming the same, interlayer insulator film, and semiconductor device
  申请人：Shin-Etsu Chemical Co., Ltd.

  公开号：US20040195660A1

  公开（公告）日：2004-10-07

  The object of the invention is to provide a porous film having the dielectric constant of 2.2 or less and having practicable mechanical strength. This invention provides a porous film-forming composition comprising (A) and (B): (A) 100 parts by weight of a hydrolyzable silicon compound and/or a product resulting from hydrolysis condensation of silicon compound expressed by following formulae (1): R 1 a SiZ 1 4-a (1) wherein Z 1 denotes a hydrolyzable group; R 1 denotes a substituted or non-substituted monovalent hydrocarbon group; and a denotes an integer of 0 to 3; and (B) 0.1 to 20 parts by weight of a cross-linking agent comprising at least one cyclic oligomer which can generate silanol group(s) by heating and which is expressed by following formulae (3): {R 31 (H)SiO} d {R 32 (Z 3 )SiO} e (3) wherein R 31 and R 32 each denotes a substituted or non-substituted monovalent hydrocarbon group; Z 3 denotes a group which can generate silanol by heating; and each d and e denotes an integer of 0 to 10, and a sum of d and e is greater than or equal to three.
• Composition for forming porous film, porous film and method for forming the same, interlevel insulator film, and semiconductor device
  申请人：Matsushita Electric Industrial Co., Ltd.

  公开号：US20040232553A1

  公开（公告）日：2004-11-25

  Provided are a composition for forming porous film which can form a porous film having practical mechanical strength in a simple and low cost process; a porous film and a method for forming the film; and an inexpensive, high-performing and highly reliable semiconductor device comprising the porous film inside. More specifically, provided is a composition for forming porous film, comprising a polymer which is obtainable by hydrolyzing and condensing one or more silane compounds represented by Formula (1), or preferably by hydrolyzing and co-condensing one or more silane compounds represented by Formula (1) and one more silane compounds represented by Formula (2), Formulas (1) and (2) being: (R 1 ) a Si(R 2 ) 4-a (1) (R 3 ) b Si(R 4 ) 4-b (2) Also provided is a method for forming porous film comprising a step of applying said composition on a substrate to form film and a step of transforming the film into porous film.
• COMPOSITION FOR FORMING POROUS FILM, POROUS FILM AND METHOD FOR FORMING THE SAME, INTERLEVEL INSULATOR FILM, AND SEMICONDUCTOR DEVICE
  申请人：Iwabuchi Motoaki

  公开号：US20070087124A1

  公开（公告）日：2007-04-19

  Provided are a composition for forming porous film which can form a porous film having practical mechanical strength in a simple and low cost process; a porous film and a method for forming the film; and an inexpensive, high-performing and highly reliable semiconductor device comprising the porous film inside. More specifically, provided is a composition for forming porous film, comprising a polymer which is obtainable by hydrolyzing and condensing one or more silane compounds represented by Formula (1), or preferably by hydrolyzing and co-condensing one or more silane compounds represented by Formula (1) and one more silane compounds represented by Formula (2), Formulas (1) and (2) being: (R 1 ) a Si(R 2 ) 4-a (1) (R 3 ) b Si(R 4 ) 4-b (2) Also provided is a method for forming porous film comprising a step of applying said composition on a substrate to form film and a step of transforming the film into porous film.