Synthesis and crystal structure of 1,3,5-tris [4-(phenylethynyl)phenyl]benzene
作者:S. V. Lindeman、Yu. T. Struchkov、I. A. Khotina、V. N. Mikhailov、A. L. Rusanov
DOI:10.1007/bf00696320
日期:1994.11
The crystal structure of 1,3,5-tris[4-(phenylethynyl)phenyl]benzene (1) has been investigated. Compound1 represents a model of the repeating unit of the most typical polyphenylene, which contains 1,3,5-trisubstituted benzene rings (chain centers) and acetylenic groups (complex-forming and cross-linking centers) in the main chain. The acetylene groups of neighboring molecules have a tendency to close
conduction mechanism induced by N atoms. These results suggest that introducing the Nheteroatoms into molecules can not only adjust the intermolecular interactions and thin film morphology, but also help to the formation of metal filament, which thus changes the resistive memory behaviour. Due to its dependable and stable storing properties, the as-fabricated WORM device based on tBu-TPPA was also applied
为了研究不同的核心和封端部分如何影响星形分子的薄膜形态和记忆性能,合成了五种分子BPPT、TPPT、TPPA、t Bu-TPPT和t Bu-TPPA,它们由相同的支化基团,但具有不同的核心单元,具有不同的电子效应,即1,3,5-三苯基苯、2,4,6-三苯基-1,3,5-三嗪和三苯胺。其中,基于TPPT、TPPA、t Bu-TPPT和t Bu-TPPA的器件含氮杂原子显示非易失性二进制一次写入多次读取 (WORM) 内存行为。值得注意的是,基于t Bu-TPPA的器件显示出最高的I ON / I OFF比率(10 5) 和最低阈值电压 (1.45 V)。我们提出这些材料的电阻转换特性是由于 N 原子诱导的铝丝导电机制。这些结果表明,将N杂原子引入分子中不仅可以调节分子间相互作用和薄膜形貌,还有助于金属丝的形成,从而改变电阻记忆行为。由于其可靠稳定的存储性能,基于t Bu-TPPA制造的WOR