3,5-Bis-hydroxymethyl-biphenyl-2-ol | 3173-25-9

• 分子结构分类: 有机化合物 - 苯类化合物 - 苯和取代衍生物
• 英文名称: 3,5-Bis-hydroxymethyl-biphenyl-2-ol
• 英文别名: 2-Oxy-3.5-bis-oxymethyl-diphenyl；2,4-Bis(hydroxymethyl)-6-phenylphenol
• CAS: 3173-25-9
• 化学式: C₁₄H₁₄O₃
• 分子量: 230.263
• InChiKey: RDXYBFHXBHYHJX-UHFFFAOYSA-N

计算性质

• 辛醇/水分配系数(LogP)：
  2
• 重原子数：
  17
• 可旋转键数：
  3
• 环数：
  2.0
• sp3杂化的碳原子比例：
  0.14
• 拓扑面积：
  60.7
• 氢给体数：
  3
• 氢受体数：
  3

反应信息

• 作为反应物：
  描述：

  3,5-Bis-hydroxymethyl-biphenyl-2-ol 、 溶剂黄146 在 氢溴酸 作用下， 生成 3,5-bis-bromomethyl-biphenyl-2-ol
  参考文献：
  名称：

  v. Auwers; Wittig, Journal fur praktische Chemie (Leipzig 1954), 1924, vol. <2> 108, p. 103

  摘要：

  DOI：
• 作为产物：
  描述：

  聚合甲醛 、 邻苯基苯酚 在 sodium hydroxide 作用下， 生成 3,5-Bis-hydroxymethyl-biphenyl-2-ol
  参考文献：
  名称：

  v. Auwers; Wittig, Journal fur praktische Chemie (Leipzig 1954), 1924, vol. <2> 108, p. 103

  摘要：

  DOI：

文献信息

• Novolac resin-containing resist underlayer film-forming composition using bisphenol aldehyde
  申请人：NISSAN CHEMICAL INDUSTRIES, LTD.

  公开号：US10017664B2

  公开（公告）日：2018-07-10

  Resist underlayer film-forming composition for forming resist underlayer film with high dry etching resistance, wiggling resistance and exerts good flattening property and embedding property for uneven parts, including resin obtained by reacting organic compound A including aromatic ring and aldehyde B having at least two aromatic hydrocarbon ring groups having phenolic hydroxy group and having structure wherein the aromatic hydrocarbon ring groups are bonded through tertiary carbon atom. The aldehyde B may be compound of Formula (1): The obtained resin may have a unit structure of Formula (2): Ar1 and Ar2 each are C6-40 aryl group. The organic compound A including aromatic ring may be aromatic amine or phenolic hydroxy group-containing compound. The composition may contain further solvent, acid and/or acid generator, or crosslinking agent. Forming resist pattern used for semiconductor production, including forming resist underlayer film by applying the resist underlayer film-forming composition onto semiconductor substrate and baking it.

  用于形成具有高干法蚀刻抗性、抗扭曲性并具有良好的平整性和嵌入性能的抗蚀底层膜形成组合物，包括通过使含有芳香环的有机化合物A和至少具有两个含酚羟基的芳香烃环团的醛B反应而获得的树脂，并具有芳香烃环团通过三级碳原子键合的结构。醛B可以是化合物的化学式（1）： 所得的树脂可能具有化学式（2）的单元结构： Ar1和Ar2各自是C6-40芳基团。含有芳香环的有机化合物A可能是芳香胺或含酚羟基的化合物。该组合物可能进一步含有溶剂、酸和/或酸发生剂，或交联剂。用于半导体生产的形成抗蚀图案，包括通过将抗蚀底层膜形成组合物涂覆在半导体衬底上并对其进行烘烤来形成抗蚀底层膜。
• NOVOLAC RESIN-CONTAINING RESIST UNDERLAYER FILM-FORMING COMPOSITION USING BISPHENOL ALDEHYDE
  申请人：NISSAN CHEMICAL INDUSTRIES, LTD.

  公开号：US20160068709A1

  公开（公告）日：2016-03-10

  Resist underlayer film-forming composition for forming resist underlayer film with high dry etching resistance, wiggling resistance and exerts good flattening property and embedding property for uneven parts, including resin obtained by reacting organic compound A including aromatic ring and aldehyde B having at least two aromatic hydrocarbon ring groups having phenolic hydroxy group and having structure wherein the aromatic hydrocarbon ring groups are bonded through tertiary carbon atom. The aldehyde B may be compound of Formula (1): The obtained resin may have a unit structure of Formula (2): Ar 1 and Ar 2 each are C 6-40 aryl group. The organic compound A including aromatic ring may be aromatic amine or phenolic hydroxy group-containing compound. The composition may contain further solvent, acid and/or acid generator, or crosslinking agent. Forming resist pattern used for semiconductor production, including forming resist underlayer film by applying the resist underlayer film-forming composition onto semiconductor substrate and baking it.

  高干法蚀刻抗性、抗扭曲性、并对不平整部分表现出良好的平整和嵌入性的抗阻层薄膜形成组合物，包括通过反应含芳香环的有机化合物A和至少有两个芳香族碳环环团且具有酚羟基的醛B所获得的树脂，并具有芳香族碳环环团通过三级碳原子键合的结构。醛B可以是化合物式（1）的化合物：所获得的树脂可以具有式（2）的单元结构：其中Ar1和Ar2各自是C6-40芳基团。含芳香环的有机化合物A可以是芳香胺或含酚羟基的化合物。该组合物还可以含有溶剂、酸和/或酸发生剂，或交联剂。用于半导体生产的形成光刻图形，包括将抗阻层薄膜形成组合物涂覆在半导体基板上并烘烤以形成抗阻层薄膜。
• Polynuclear polyhydric phenols and process for preparation thereof
  申请人：MITSUI PETROCHEMICAL INDUSTRIES, LTD.

  公开号：EP0117759A1

  公开（公告）日：1984-09-05

  A polynuclear polyhydric phenol of the general formula (I); wherein R1 and R2 each represent a hydrogen atom or a C1-C4 alkyl group, R3 represents a hydrogen atom, an alkyl group, an aryl group or a halogen atom, and n is an integer of from 0 to 10, can be used to provide a polyepoxy compound which is a polyglycidyl ether of the polynuclear polyhydric ether. When the polyepoxy compound is combined with a curing agent, a curable epoxy resin composition results which can be used to provide molded cured articles having excellent heat resistance characteristics.

  通式(I)的多核多氢酚； 其中 R1 和 R2 分别代表氢原子或 C1-C4 烷基，R3 代表氢原子、烷基、芳基或卤素原子，n 为 0 至 10 的整数。当该聚环氧化合物与固化剂结合时，可产生一种可固化的环氧树脂组合物，该组合物可用于提供具有优异耐热性能的模塑固化制品。
• LAMINATED BODY INCLUDING NOVOLAC RESIN AS PEELING LAYER
  申请人：Nissan Chemical Corporation

  公开号：EP3706156A1

  公开（公告）日：2020-09-09

  There is provided a laminated body for separating an object to be processed by cutting or the like, or for processing, for example, polishing a back surface of a water, the laminated body comprising an intermediate layer that is disposed between a support and the object to be processed and peelably adheres to the support and the object to be processed, wherein the intermediate layer includes at least a peeling layer in contact with the support, and the peeling layer contains a novolac resin that absorbs light with a wavelength of 190 nm to 600 nm incident through the support, resulting in modification, and a material and a method for separation without mechanical load. A laminated body for polishing a back surface of a wafer, the laminated body comprising an intermediate layer that is disposed between a support and a circuit surface of the wafer and peelably adheres to the support and the circuit surface, wherein the intermediate layer includes an adhesion layer in contact with the wafer and a peeling layer in contact with the support, and the peeling layer contains a novolac resin that absorbs light with a wavelength of 190 nm to 600 nm incident through the support, resulting in modification. The light transmittance of the peeling layer at a wavelength range of 190 nm to 600 nm may be 1 to 90%. The modification caused by absorption of light may be photodecomposition of the novolac resin.

  提供了一种层压体，用于通过切割等方式分离待加工物体，或用于加工，例如，抛光水的背面，层压体包括中间层，该中间层设置在支撑物和待加工物体之间，并可剥离地粘附在支撑物和待加工物体上、其中，中间层至少包括一个与支撑物接触的剥离层，剥离层含有一种酚醛树脂，可吸收通过支撑物入射的波长为 190 纳米至 600 纳米的光，从而产生改性效果，以及一种无需机械负荷即可分离的材料和方法。 一种用于抛光晶片背面的层压体，该层压体包括中间层，该中间层设置在晶片的支撑件和电路表面之间，并可剥离地粘附在支撑件和电路表面上，其中，中间层包括与晶片接触的粘附层和与支撑件接触的剥离层，剥离层包含一种酚醛树脂，该酚醛树脂可吸收通过支撑件入射的波长为 190 纳米至 600 纳米的光，从而产生改性效果。剥离层在 190 纳米至 600 纳米波长范围内的透光率可达 1%至 90%。光吸收引起的改性可能是酚醛树脂的光分解。
• Resist underlayer film-forming composition containing polymer having arylene group
  申请人：NISSAN CHEMICAL INDUSTRIES, LTD.

  公开号：US10394124B2

  公开（公告）日：2019-08-27

  A resist underlayer film-forming composition for lithography process having characteristics of enabling wafer surface planarization after film formation, excellent planarization performance on substrate with level difference, and good embeddability in fine hole pattern. The resist underlayer film-forming composition including polymer having unit structure of Formula (1) and solvent, wherein each of R1 to R4 is independently hydrogen atom or methyl group, and X1 is divalent organic group having at least one arylene group optionally substituted by alkyl group, amino group, or hydroxyl group, and wherein X1 in Formula (1) is organic group of Formula (2), wherein A1 is phenylene group or naphthylene group, A2 is phenylene group, naphthylene group, or organic group of Formula (3), and dotted line is bond, and wherein each of A3 and A4 is independently phenylene group or naphthylene group, and dotted line is bond.

  一种用于光刻工艺的抗蚀剂底层成膜组合物，其特点是成膜后可使晶片表面平整化，在有水平差异的基底上具有优异的平整化性能，以及在细孔图案中具有良好的嵌入性。光刻胶底层成膜组合物包括具有式（1）单元结构的聚合物和溶剂、 其中 R1 至 R4 各自独立地为氢原子或甲基，X1 为二价有机基团，其中至少有一个芳烯基团可选地被烷基、氨基或羟基取代，且式（1）中的 X1 为式（2）的有机基团、 其中 A1 为亚苯基或萘基，A2 为亚苯基、萘基或式 (3) 的有机基团，虚线为键，以及 其中 A3 和 A4 各自独立地为亚苯基或亚萘基，虚线为键。