4-styrene | 104109-22-0

• 分子结构分类: 有机化合物 - 苯类化合物 - 苯和取代衍生物
• 英文名称: 4-styrene
• 英文别名: 4-(bis(trimethylsilyl)methyl)styrene；[(4-Ethenylphenyl)methylene]bis(trimethylsilane)；[(4-ethenylphenyl)-trimethylsilylmethyl]-trimethylsilane
• CAS: 104109-22-0
• 化学式: C₁₅H₂₆Si₂
• 分子量: 262.542
• InChiKey: LXLJJQUMSRUTQD-UHFFFAOYSA-N

物化性质

• 沸点：
  290.7±25.0 °C(Predicted)
• 密度：
  0.866±0.06 g/cm3(Predicted)

计算性质

• 辛醇/水分配系数(LogP)：
  5.17
• 重原子数：
  17
• 可旋转键数：
  4
• 环数：
  1.0
• sp3杂化的碳原子比例：
  0.47
• 拓扑面积：
  0
• 氢给体数：
  0
• 氢受体数：
  0

反应信息

• 作为产物：
  描述：

  对溴苯乙烯 、 二(三甲基硅基)氯甲烷 在 magnesium 、 四(三苯基膦)钯 作用下， 以 四氢呋喃 为溶剂， 反应 14.0h， 以66.3%的产率得到4-styrene
  参考文献：
  名称：

  Synthesis and Characterization of Silicon-Containing Block Copolymers from Nitroxide-Mediated Living Free Radical Polymerization

  摘要：

  High etch resistance to oxygen plasma for silicon-containing polymers, and the high thermal and mechanical robustness of the etching product, silicon oxide, make it attractive to design novel silicon-containing block copolymers for direct patterning of nanostructures on a desired substrate. Here, we report the synthesis of a series of block copolymers from silicon-containing styrenic monomers and styrene (St) or 4-acetoxystyrene (AcOSt) using living free radical polymerization via a a-hydride nitroxide-mediated unimer (alpha-H unimer). Controlled polymerization with narrow polydispersity (PDI < 1.25) and high yield (up to 80%) were achieved by optimizing polymerization time and temperature, addition of solvents, use of rate accelerants, monomer addition sequence, and solvent polarity. Block copolymer morphologies before and after O-2 plasma were studied using small-angle X-ray scattering (SAXS) and transmission electron microscopy (TEM). When silicon-containing block formed the major phase and silicon concentration was greater than 12 wt %, the morphology and domain size were maintained after O-2 plasma.

  DOI：

  10.1021/ma049217u

文献信息

• A Novel Synthesis of 4B-Element-Containing Styrene Derivatives
  作者：Yukio Nagasaki、Koichi Kurosawa、Teiji Tsuruta

  DOI：10.1246/bcsj.63.3036

  日期：1990.10

  To synthesize 4B-group element-containing styrene monomers, alkylmetalation reactions of 4-methylstyrene (1) in the presence of lithium diisopropylamide (2) were investigated. Trialkylsilylation of 1 proceeded easily by the reaction with trialkylsilyl chloride in the presence of 2 to form mono- and bis-trialkylsilylated methylstyrene. This synthetic method was expanded to other 4B-element-containing styrenes such as germyl and stannyl compounds.

  为了合成含 4B 族元素的苯乙烯单体，研究人员对 4-甲基苯乙烯（1）在二异丙基酰胺锂（2）存在下的烷基金属化反应进行了研究。在 2 的存在下，通过与三烷基硅酰氯反应，1 很容易发生三烷基硅烷化反应，生成单-三烷基硅烷化甲基苯乙烯和双-三烷基硅烷化甲基苯乙烯。这种合成方法被推广到其他含 4B 元素的苯乙烯，如芽基和锡化合物。
• NAGASAKI YUKIO; TSURUTA TEIJI, MAKROMOLEK. CHEM. RAPID. COMMUN., 7,(1986) N 7, 437-442
  作者：NAGASAKI YUKIO、 TSURUTA TEIJI

  DOI：——

  日期：——
• Synthesis and Characterization of Silicon-Containing Block Copolymers from Nitroxide-Mediated Living Free Radical Polymerization
  作者：Ken-ichi Fukukawa、Lei Zhu、Padma Gopalan、Mitsuru Ueda、Shu Yang

  DOI：10.1021/ma049217u

  日期：2005.1.1

  High etch resistance to oxygen plasma for silicon-containing polymers, and the high thermal and mechanical robustness of the etching product, silicon oxide, make it attractive to design novel silicon-containing block copolymers for direct patterning of nanostructures on a desired substrate. Here, we report the synthesis of a series of block copolymers from silicon-containing styrenic monomers and styrene (St) or 4-acetoxystyrene (AcOSt) using living free radical polymerization via a a-hydride nitroxide-mediated unimer (alpha-H unimer). Controlled polymerization with narrow polydispersity (PDI < 1.25) and high yield (up to 80%) were achieved by optimizing polymerization time and temperature, addition of solvents, use of rate accelerants, monomer addition sequence, and solvent polarity. Block copolymer morphologies before and after O-2 plasma were studied using small-angle X-ray scattering (SAXS) and transmission electron microscopy (TEM). When silicon-containing block formed the major phase and silicon concentration was greater than 12 wt %, the morphology and domain size were maintained after O-2 plasma.