An upper layer-forming composition formed on a photoresist while causing almost no intermixing with the photoresist film and a photoresist patterning method are provided. The upper layer-forming composition is stably maintained without being eluted in a medium such as water during liquid immersion lithography and is easily dissolved in an alkaline developer. The upper layer-forming composition covers a photoresist film for forming a pattern by exposure to radiation. The composition comprises a resin dissolvable in a developer for the photoresist film and a solvent in which the resin is dissolved. The solvent has a viscosity of less than 5.2 x 10-3 Pa·s at 20°C. In addition, the solvent does not cause intermixing of the photoresist film and the upper layer-forming composition. The solvent contains an ether or a hydrocarbon.
本发明提供了一种在光刻胶上形成的上层形成组合物,同时几乎不会造成与光刻胶膜的混合,并提供了一种光刻胶图案化方法。在液浸光刻过程中,上层形成组合物可稳定地保持在
水等介质中而不会被洗
脱,并且很容易溶解在碱性显影剂中。上层形成组合物覆盖在光刻胶膜上,通过辐射形成图案。该组合物包括一种可溶解于光刻胶膜显影剂中的
树脂和一种可溶解
树脂的溶剂。溶剂在 20°C 时的粘度小于 5.2 x 10-3 Pa-s。此外,该溶剂不会造成光刻胶膜和上层形成组合物的混合。溶剂含有醚或烃。